Abstract: A dual-floating gates optoelectronic self-exciting synaptic memristor includes a bottom gate, a barrier layer coated on a surface of the bottom gate, a quantum dot layer coated on a surface of a middle portion of the barrier layer, two inverted L-shaped electron or hole tunneling layers coated on a surface of two end portions of the quantum dot layer respectively, two inverted L-shaped floating gate storage layers coated on the electron or hole tunneling layers respectively, two electron or hole blocking layers coated on the two floating gate storage layers respectively, an inverted L-shaped source electrode and an inverted L-shaped drain electrode coated on the two electron or hole blocking layers respectively, a photosensitive material layer coated on a surface of a middle portion of the quantum dot layer, and a top gate coated on the photosensitive material layer.

Abstract: An optoelectronic synaptic memristor includes: a bottom electrode layer, a porous structure layer modified with quantum dots, a two-dimensional material layer, a transparent top electrode layer, and a waveguide layer, which are arranged in sequence from top to bottom, wherein the waveguide is ridge shaped for light conduction, comprising a wedge-shaped output terminal, wherein: through the wedge-shaped output terminal of the waveguide, light is vertically injected into the two-dimensional material layer and the porous structure layer modified with the quantum dots. By integrating the waveguide and the optoelectronic memristor, the present invention obtains the highly controlled characteristics with high alignment and confinement for light effect on the device and has advantages in realizing optoelectronic synergy in the optoelectronic synaptic memristors.