Patents by Inventor Zhitian CHEN

Zhitian CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ultralow dielectric mesoporous organosilicon film and preparation method thereof
    Patent number: 11328926
    Abstract: The present invention relates to the field of chemical industry, and discloses organosilicone micro-mesoporous ultra-low dielectric thin films and preparation methods therefor. A structural formula of a POSS-based organosilane precursor in the thin film is as follows: where n is 12, 16, 18, 20, or 22, and X is CH3 or CH2CH3. The preparation method includes the following steps: dissolving a certain amount of the POSS-based precursor in an organic solvent at a room temperature; adding an appropriate amount of a photoacid generator, after uniformly stirring, spraying a mixed liquid to form a film on a substrate; placing the substrate under a light-emitting diode lamp for irradiating for a preset time after the organic solvent is completely evaporated; then placing the substrate in N,N-dimethylformamide for undergoing a transesterification reaction with fluoroalkyl alcohol for 24-72 h; and washing and drying to obtain the organosilicone micro-mesoporous ultra-low dielectric thin film.
    Type: Grant
    Filed: October 9, 2018
    Date of Patent: May 10, 2022
    Assignee: HUAIYIN INSTITUTE OF TECHNOLOGY
    Inventors: Lingli Ni, Yongtao Liu, Tao Xie, Minhua Xu, Zhitian Chen, Peng Chai, Xiaoyan Gao, Liang Dong Feng, Shizhong Zhang
  • ULTRALOW DIELECTRIC MESOPOROUS ORGANOSILICON FILM AND PREPARATION METHOD THEREOF
    Publication number: 20210175074
    Abstract: The present invention relates to the field of chemical industry, and discloses organosilicone micro-mesoporous ultra-low dielectric thin films and preparation methods therefor. A structural formula of a POSS-based organosilane precursor in the thin film is as follows: where n is 12, 16, 18, 20, or 22, and X is CH3 or CH2CH3. The preparation method includes the following steps: dissolving a certain amount of the POSS-based precursor in an organic solvent at a room temperature; adding an appropriate amount of a photoacid generator, after uniformly stirring, spraying a mixed liquid to form a film on a substrate; placing the substrate under a light-emitting diode lamp for irradiating for a preset time after the organic solvent is completely evaporated; then placing the substrate in N,N-dimethylformamide for undergoing a transesterification reaction with fluoroalkyl alcohol for 24-72 h; and washing and drying to obtain the organosilicone micro-mesoporous ultra-low dielectric thin film.
    Type: Application
    Filed: October 9, 2018
    Publication date: June 10, 2021
    Inventors: Lingli NI, Yongtao LIU, Tao XIE, Minhua XU, Zhitian CHEN, Peng CHAI, Xiaoyan GAO, Liang Dong FENG, Shizhong ZHANG
  • Round stove table
    Patent number: D1019247
    Type: Grant
    Filed: June 29, 2021
    Date of Patent: March 26, 2024
    Assignee: Dongguan City Ule-cooker Outdoor Leisure Products Co., Ltd.
    Inventors: Zhitian Wang, Zhengwei Chen