Patents by Inventor Zhiwei Lin
Zhiwei Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10622339Abstract: A micro-LED macro transfer method, a micro-LED display device, and a method for fabricating the same are provided. In the micro-LED macro transfer method, the LED chips on an array are divided into a first plurality of LED chips and a second plurality of LED chips. An LED chip includes a first surface and a second surface. The first plurality of LED chips are configured so that their first surfaces are coupled to the first transfer substrate. The second plurality of LED chips are configured so that their second surfaces are coupled to the second transfer substrate. Accordingly, the first transfer substrate transfers the first plurality of LED chips to the first transfer substrate while the second transfer substrate transfers the second plurality of LED chips to the second transfer substrate.Type: GrantFiled: August 31, 2018Date of Patent: April 14, 2020Assignee: Xiamen Changelight Co., Ltd.Inventors: Zhiwei Lin, Qunxiong Deng, Kaixuan Chen, Zhijie Ke, Xiangjing Zhuo
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Publication number: 20200091374Abstract: A semiconductor chip of a light emitting diode includes a substrate, and an N-type gallium nitride layer, a quantum well layer, and a P-type gallium nitride layer stacked on the substrate successively, an N-type electrode electrically connected to the N-type gallium nitride layer, and a P-type electrode electrically connected to the P-type gallium nitride layer. The quantum well layer includes at least one quantum barrier and at least one quantum well stacked successively in sequence, wherein the growth pressure of the quantum barrier and the growth pressure of the quantum well are different, such that the interface crystal quality between the quantum well and the quantum barrier of the quantum well layer can be greatly improved to enhance the luminous efficiency of the semiconductor chip.Type: ApplicationFiled: September 12, 2019Publication date: March 19, 2020Inventors: Zhi WAN, Gang YAO, Xiangjing ZHUO, Zhiwei LIN
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Publication number: 20200020830Abstract: A light-emitting diode (LED) chip (2) comprises a substrate (20), an epitaxial structure (21), a transparent conductive layer (22), a passivation protective layer (23), and at least one electrode (25). The epitaxial structure (21) is disposed on the substrate (20). The transparent conductive layer (22) is disposed on the epitaxial structure (21). The transparent conductive layer (22) defines one or more first through holes (220) that extend through the transparent conductive layer (22). The passivation protective layer (23) is disposed on the transparent conductive layer (22). The passivation protective layer (23) defines one or more second through holes (230) that extend through the passivation protective layer (23). The electrode (25) is disposed on the passivation protective layer (23). The electrode (25) electrically connects the transparent conductive layer (11) through the one or more second through holes (230).Type: ApplicationFiled: October 7, 2017Publication date: January 16, 2020Inventors: Yingce LIU, Bin SONG, Junxian LI, Qilong WU, Yang WANG, Kaixuan CHEN, Zhendong WEI, Xingen WU, Hongyi ZHOU, Lihe CAI, Xinmao HUANG, Zhiwei LIN, Yongtong LI, Qimeng LYU, Hexun CAI, Gengcheng LI
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Publication number: 20200015891Abstract: A microwave ablation antenna assembly (10) including a coaxial cable (14) terminating in a radiating section (16), a first tubular member (18) circumscribing the coaxial cable (14) and spaced therefrom to permit fluid flow therebetween, and a second tubular member (20) circumscribing the first tubular member (18) and spaced therefrom to permit fluid flow therebetween. The microwave ablation antenna assembly (10) further includes a hub (26) configured to receive the coaxial cable (14), first tubular member (18), and second tubular member (20), the hub (26) including a fluid inflow chamber (36) and a fluid outflow chamber (38) and an integrated hub divider (40) and hub cap (28) separating the fluid inflow chamber (36) from the fluid outflow chamber (38) and prohibiting fluid flow between the inflow chamber (36) and outflow chamber (38) except via the spacing between the coaxial cable (14) and the first tubular member (18) and between the first tubular member (18) and the second tubular member (20).Type: ApplicationFiled: March 13, 2017Publication date: January 16, 2020Inventors: Jiagui Li, William J. Dickhans, Zhiwei Lin
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Publication number: 20200013760Abstract: A micro-LED macro transfer method, a micro-LED display device, and a method for fabricating the same are provided. In the micro-LED macro transfer method, the LED chips on an array are divided into a first plurality of LED chips and a second plurality of LED chips. An LED chip includes a first surface and a second surface. The first plurality of LED chips are configured so that their first surfaces are coupled to the first transfer substrate. The second plurality of LED chips are configured so that their second surfaces are coupled to the second transfer substrate. Accordingly, the first transfer substrate transfers the first plurality of LED chips to the first transfer substrate while the second transfer substrate transfers the second plurality of LED chips to the second transfer substrate.Type: ApplicationFiled: August 31, 2018Publication date: January 9, 2020Applicant: Xiamen Changelight Co. Ltd.Inventors: Zhiwei LIN, Qunxiong DENG, Kaixuan CHEN, Zhijie KE, Xiangjing ZHUO
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Patent number: 10468550Abstract: A light-emitting diode (LED) device and a method of producing the same are provided. The LED device comprises a first conductive layer, a second conductive layer, an active layer sandwiched between the first conductive layer and the second conductive layer and a first electrode in electrical contact with the first conductive layer. The first conductive layer has a laminate structure comprising a first conductive sub-layer, a current blocking layer, and a second conductive sub-layer. The first electrode comprises a first extended electrode in electrical contact with the first conductive sub-layer, and a second extended electrode in electrical contact with the second conductive sub-layer. The first conductive sub-layer and the second conductive sub-layer may have different depths.Type: GrantFiled: December 14, 2018Date of Patent: November 5, 2019Assignee: XIAMEN CHANGELIGHT CO., LTD.Inventors: Zhiwei Lin, Kaixuan Chen, Junxian Li, Xiangjing Zhuo, Qilong Wu
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Publication number: 20190296189Abstract: A semiconductor wafer includes a substrate (1), a buffer layer (2) deposited on the substrate (1), and an epitaxial layer (4) above the buffer layer (2). The buffer layer (2) includes a plurality of semiconductor material layers (22) and a plurality of oxygen-doped material layers (21). The semiconductor material layers (22) and the oxygen-doped material layers (21) are deposited in an alternating arrangement on top of each other. Oxygen concentrations of the oxygen-doped material layers (21) gradually decrease along a direction from the substrate (1) to the epitaxial layer (4).Type: ApplicationFiled: July 14, 2017Publication date: September 26, 2019Inventors: Zhiwei Lin, Kaixuan Chen, Yong Zhang, Xiangjing Zhuo, Wei Jiang, Yang Wang, Jichu Tong, Tianzu Fang
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Publication number: 20190221709Abstract: A light-emitting diode (LED) device and a method of producing the same are provided. The LED device comprises a first conductive layer, a second conductive layer, an active layer sandwiched between the first conductive layer and the second conductive layer and a first electrode in electrical contact with the first conductive layer. The first conductive layer has a laminate structure comprising a first conductive sub-layer, a current blocking layer, and a second conductive sub-layer. The first electrode comprises a first extended electrode in electrical contact with the first conductive sub-layer, and a second extended electrode in electrical contact with the second conductive sub-layer. The first conductive sub-layer and the second conductive sub-layer may have different depths.Type: ApplicationFiled: December 14, 2018Publication date: July 18, 2019Applicant: Xiamen Changelight Co. Ltd.Inventors: Zhiwei LIN, Kaixuan CHEN, Junxian LI, Xiangjing ZHUO, Qilong WU
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Patent number: 10333028Abstract: According to at least some embodiments of the present disclosure, a light-emitting diode (LED) chip includes a semiconductor material portion, a transparent conductive layer disposed above the semiconductor material portion, a current blocking layer disposed above the transparent conductive layer, one or more electrodes disposed above the current blocking layer, and a plurality of electron outflow channels that electrically interconnect at least one electrode and the semiconductor material portion across the transparent conductive layer and the current blocking layer.Type: GrantFiled: April 7, 2017Date of Patent: June 25, 2019Assignee: XIAMEN CHANGELIGHT CO., LTD.Inventors: Liang Chen, Junxian Li, Qimeng Lv, Zhendong Wei, Yingce Liu, Xiaoping Li, Xinmao Huang, Kaixuan Chen, Yong Zhang, Zhiwei Lin, Wei Jiang, Xiangjing Zhuo, Tianzu Fang
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Publication number: 20190103506Abstract: According to at least some embodiments of the present disclosure, a method of manufacturing semiconductor wafers comprises: selectively growing a nitride buffer layer on a first surface of a patterned substrate, the patterned substrate including at least the first surface and a second surface; and growing an epitaxial layer on the nitride buffer layer, wherein a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate. The epitaxial layer does not include multiple crystal surfaces having different crystal growth directions that cause a stress at a junction interface where the crystal surfaces having the different crystal growth directions meet.Type: ApplicationFiled: July 31, 2018Publication date: April 4, 2019Inventors: Kaixuan Chen, Zhiwei Lin, Xiangjing Zhuo, Gang Jing, Aimin Wang
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Publication number: 20190088476Abstract: Disclosed is a wafer or a material stack for semiconductor-based optoelectronic or electronic devices that minimizes or reduces misfit dislocation, as well as a method of manufacturing such wafer of material stack. A material stack according to the disclosed technology includes a substrate; a basis buffer layer of a first material disposed above the substrate; and a plurality of composite buffer layers disposed above the basis buffer layer sequentially along a growth direction. The growth direction is from the substrate to a last composite buffer layer of the plurality of composite buffer layers. Each composite buffer layer except the last composite buffer layer includes a first buffer sublayer of the first material, and a second buffer sublayer of a second material disposed above the first buffer sublayer. The thicknesses of the first buffer sublayers of the composite buffer layers decrease along the growth direction.Type: ApplicationFiled: November 2, 2018Publication date: March 21, 2019Applicant: Xiamen Changelight Co., Ltd.Inventors: Kaixuan Chen, Wei Jiang, Zhiwei Lin, Xiangjing Zhuo, Tianzu Fang, Yang Wang, Jichu Tong
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Patent number: 10121656Abstract: Disclosed is a wafer or a material stack for semiconductor-based optoelectronic or electronic devices that minimizes or reduces misfit dislocation, as well as a method of manufacturing such wafer of material stack. A material stack according to the disclosed technology includes a substrate; a basis buffer layer of a first material disposed above the substrate; and a plurality of composite buffer layers disposed above the basis buffer layer sequentially along a growth direction. The growth direction is from the substrate to a last composite buffer layer of the plurality of composite buffer layers. Each composite buffer layer except the last composite buffer layer includes a first buffer sublayer of the first material, and a second buffer sublayer of a second material disposed above the first buffer sublayer. The thicknesses of the first buffer sublayers of the composite buffer layers decrease along the growth direction.Type: GrantFiled: February 14, 2017Date of Patent: November 6, 2018Assignee: Xiamen Changelight Co., Ltd.Inventors: Kaixuan Chen, Wei Jiang, Zhiwei Lin, Xiangjing Zhuo, Tianzu Fang, Yang Wang, Jichu Tong
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Patent number: 10043850Abstract: An HV-LED module having 3D light-emitting structure and a method for manufacturing the HV-LED module are disclosed. The HV-LED module has at least two stacked parts of substage LEDs that each have an independent light-emitting structure and are bonded in a staggered pattern, and the substage LEDs are connected in series to form the 3D light-emitting structure, thereby significantly increasing light-emitting power per unit area, downsizing a high-voltage chip module using it by nearly two times, and effectively reducing packaging costs for the HV-LED module.Type: GrantFiled: March 18, 2016Date of Patent: August 7, 2018Assignee: Xiamen Changelight Co., Ltd.Inventors: Zhiwei Lin, Kaixuan Chen, Yong Zhang, Xiangjing Zhuo, Wei Jiang, Tianzu Fang, Yinqiao Zhang, Xiangwu Wang
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Publication number: 20170294557Abstract: According to at least some embodiments of the present disclosure, a light-emitting diode (LED) chip includes a semiconductor material portion, a transparent conductive layer disposed above the semiconductor material portion, a current blocking layer disposed above the transparent conductive layer, one or more electrodes disposed above the current blocking layer, and a plurality of electron outflow channels that electrically interconnect at least one electrode and the semiconductor material portion across the transparent conductive layer and the current blocking layer.Type: ApplicationFiled: April 7, 2017Publication date: October 12, 2017Inventors: Liang Chen, Junxian Li, Qimeng Lv, Zhendong Wei, Yingce Liu, Xiaoping Li, Xinmao Huang, Kaixuan Chen, Yong Zhang, Zhiwei Lin, Wei Jiang, Xiangjing Zhuo, Tianzu Fang
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Publication number: 20170256403Abstract: Disclosed is a method of manufacturing a semiconductor-based wafer for reducing misfit dislocation. The method includes steps of depositing a basis buffer layer of aluminum nitride (AlN) on a substrate; forming an AlN sublayer of a composite buffer layer on the basis buffer layer by supplying pulses of reactants for AlN for a first total pulse time period; forming an gallium nitride (GaN) sublayer of the composite buffer layer on the AlN sublayer by supplying pulses of reactants for GaN for a second total pulse time period; and growing additional composite buffer layers along a growth direction from the substrate to the composite buffer layers, by repeating steps of forming the AlN sublayer and forming the GaN sublayer. The first total pulse time period for each AlN sublayer decreases among the composite buffer layers along the growth direction.Type: ApplicationFiled: February 14, 2017Publication date: September 7, 2017Inventors: Kaixuan Chen, Wei Jiang, Zhiwei Lin, Xiangjing Zhuo, Tianzu Fang, Yang Wang, Jichu Tong
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Publication number: 20170256404Abstract: Disclosed is a wafer or a material stack for semiconductor-based optoelectronic or electronic devices that minimizes or reduces misfit dislocation, as well as a method of manufacturing such wafer of material stack. A material stack according to the disclosed technology includes a substrate; a basis buffer layer of a first material disposed above the substrate; and a plurality of composite buffer layers disposed above the basis buffer layer sequentially along a growth direction. The growth direction is from the substrate to a last composite buffer layer of the plurality of composite buffer layers. Each composite buffer layer except the last composite buffer layer includes a first buffer sublayer of the first material, and a second buffer sublayer of a second material disposed above the first buffer sublayer. The thicknesses of the first buffer sublayers of the composite buffer layers decrease along the growth direction.Type: ApplicationFiled: February 14, 2017Publication date: September 7, 2017Inventors: Kaixuan Chen, Wei Jiang, Zhiwei Lin, Xiangjing Zhuo, Tianzu Fang, Yang Wang, Jichu Tong
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Publication number: 20160276402Abstract: An HV-LED module having 3D light-emitting structure and a method for manufacturing the HV-LED module are disclosed. The HV-LED module has at least two stacked parts of substage LEDs that each have an independent light-emitting structure and are bonded in a staggered pattern, and the substage LEDs are connected in series to form the 3D light-emitting structure, thereby significantly increasing light-emitting power per unit area, downsizing a high-voltage chip module using it by nearly two times, and effectively reducing packaging costs for the HV-LED module.Type: ApplicationFiled: March 18, 2016Publication date: September 22, 2016Inventors: Zhiwei Lin, Kaixuan Chen, Yong Zhang, Xiangjing Zhuo, Wei Jiang, Tianzu Fang, Yinqiao Zhang, Xiangwu Wang
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Patent number: 8379751Abstract: A method of transmitting data to a receiver, wherein the data is transmitted using a plurality of sub-carriers, is provided. The method provided includes determining, for each sub-carrier and for each of a plurality of combinations of the sub-carrier and an antenna of a plurality of antennas to be used for transmitting the data, a transmission characteristic of a transmission of the sub-carrier using the antenna; and selecting, for each sub-carrier, an antenna of the plurality of antennas to be used for the transmission of the sub-carrier based on the transmission characteristic of the transmission of the sub-carrier between the antenna and the receiver.Type: GrantFiled: September 19, 2008Date of Patent: February 19, 2013Assignee: Agency for Science, Technology and ResearchInventors: Zhiwei Lin, Xiaoming Peng, Po Shin Francois Chin, Khiam Boon Png
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Patent number: 8260614Abstract: A method and system that expands a word graph to a phone graph. An unknown speech signal is received. A word graph is generated based on an application task or based on information extracted from the unknown speech signal. The word graph is expanded into a phone graph. The unknown speech signal is recognized using the phone graph. The phone graph can be based on a cross-word acoustical model to improve continuous speech recognition. By expanding a word graph into a phone graph, the phone graph can consume less memory than a word graph and can reduce greatly the computation cost in the decoding process than that of the word graph thus improving system performance. Furthermore, continuous speech recognition error rate can be reduced by using the phone graph, which provides a more accurate graph for continuous speech recognition.Type: GrantFiled: September 28, 2000Date of Patent: September 4, 2012Assignee: Intel CorporationInventors: Qingwei Zhao, Zhiwei Lin, Yonghong Yan
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Patent number: D754229Type: GrantFiled: May 12, 2014Date of Patent: April 19, 2016Assignee: Carl Zeiss Microscopy GmbhInventors: Ralph Aschenbach, Hai Li, Zhiwei Lin, Zhongxiang Liang, Libing Song, Yujuan Shen, Guangmei Wu