Abstract: A rolling device for three-dimensional curved surface forming or thin sheet rolling of a sheet metal, comprising a forming roll (1), a supporting mechanism, an adjusting mechanism and a driving mechanism. The forming roll (1) comprises an upper forming roll (1a) and a lower forming roll (1b); the supporting mechanism is a multi-point supporting mechanism (2a) or an overall supporting mechanism (2b) for supporting the forming roll; the adjusting mechanism is a multi-point shape adjusting mechanism (3) and/or an overall displacing mechanism for adjusting the shape and/or relative height of the forming roll (1); and the driving mechanism applies a torque to one or two ends of the upper forming roll (1a) and/or the lower forming roll (1b). The present invention also provides a method for sheet rolling by using the rolling device. The rolling device and rolling method can achieve three-dimensional curved surface rolling or thin sheet rolling of a sheet metal simply, quickly and at a low cost.

Abstract: A process for producing particle-reinforced composite materials through utilization of an in situ reaction to produce a uniform dispersion of a fine particulate reinforcement phase. The process includes forming a melt of a first material, and then introducing particles of a second material into the melt and subjecting the melt to high-intensity acoustic vibration. A chemical reaction initiates between the first and second materials to produce reaction products in the melt. The reaction products comprise a solid particulate phase, and the high-intensity acoustic vibration fragments and/or separates the reaction products into solid particles that are dispersed in the melt and are smaller than the particles of the second material. Also encompassed are particle-reinforced composite materials produced by such a process.

Abstract: A process for producing particle-reinforced composite materials through utilization of an in situ reaction to produce a uniform dispersion of a fine particulate reinforcement phase. The process includes forming a melt of a first material, and then introducing particles of a second material into the melt and subjecting the melt to high-intensity acoustic vibration. A chemical reaction initiates between the first and second materials to produce reaction products in the melt. The reaction products comprise a solid particulate phase, and the high-intensity acoustic vibration fragments and/or separates the reaction products into solid particles that are dispersed in the melt and are smaller than the particles of the second material. Also encompassed are particle-reinforced composite materials produced by such a process.

Abstract: A process for producing particle-reinforced composite materials through utilization of an in situ reaction to produce a uniform dispersion of a fine particulate reinforcement phase. The process includes forming a melt of a first material, and then introducing particles of a second material into the melt and subjecting the melt to high-intensity acoustic vibration. A chemical reaction initiates between the first and second materials to produce reaction products in the melt. The reaction products comprise a solid particulate phase, and the high-intensity acoustic vibration fragments and/or separates the reaction products into solid particles that are dispersed in the melt and are smaller than the particles of the second material. Also encompassed are particle-reinforced composite materials produced by such a process.

Abstract: A method for fabricating an OLED by preparing phosphorescent metal complexes in situ is provided. In particular, the method simultaneously synthesizes and deposits copper (I) complexes in an organic light emitting device. Devices comprising such complexes may provide improved photoluminescent and electroluminescent properties.

Abstract: A silicon-controlled rectifier (SCR) device having a high holding voltage includes a PNP transistor and an NPN transistor, each transistor having both p-type and n-type dopant regions in their respective emitter areas. The device is particularly suited to high voltage applications, as the high holding voltage provides a device which is more resistant to latchup subsequent to an electrostatic discharge event compared to devices having a low holding voltage.

Abstract: A silicon-controlled rectifier (SCR) device having a high holding voltage includes a PNP transistor and an NPN transistor, each transistor having both p-type and n-type dopant regions in their respective emitter areas. The device is particularly suited to high voltage applications, as the high holding voltage provides a device which is more resistant to latchup subsequent to an electrostatic discharge event compared to devices having a low holding voltage.

Abstract: A structure frame made of arches is formed with a plurality of curved frame units in parallel arrangement, where the curved frame units having butt joints (6) are connected in length by several straight bars (16) and the butt joints (6). The straight bars are connected in line at right angles with the curved frame units in order to form a truss. The curved frame units include curved bars (14) and tie members (11) where the curved bars are connected to form the curved frame units by the tie members (11) and the butt joints (6). A tension member (9) is provided between the curved frame units and the trusses.