Patents by Inventor Zhiwei Tan

Zhiwei Tan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11233138
    Abstract: A thin film transistor (TFT) and a method of manufacturing same are provided. A photoresist layer is dry-etched to form a tunnel before an active layer is formed, wherein a bottom of the tunnel is a copper trace layer. After that, two edges of the photoresist layer are aligned with two edges of the copper trace layer. Therefore, the photoresist layer won't protrude over an amorphous silicon layer to block the etching gas from etching the amorphous silicon layer. As a result, an aperture ratio of the TFT is increased, and quality of the TFT is improved. By forming an oxidation protective layer on the tunnel, the copper trace layer is prevented from being reacted with the etching gas to form a compound. Therefore, metals or compounds on the tunnel can be completely etched, and quality of the TFT is further improved.
    Type: Grant
    Filed: May 27, 2019
    Date of Patent: January 25, 2022
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventor: Zhiwei Tan
  • Publication number: 20210336028
    Abstract: A thin film transistor (TFT) and a method of manufacturing same are provided. A photoresist layer is dry-etched to form a tunnel before an active layer is formed, wherein a bottom of the tunnel is a copper trace layer. After that, two edges of the photoresist layer are aligned with two edges of the copper trace layer. Therefore, the photoresist layer won't protrude over an amorphous silicon layer to block the etching gas from etching the amorphous silicon layer. As a result, an aperture ratio of the TFT is increased, and quality of the TFT is improved. By forming an oxidation protective layer on the tunnel, the copper trace layer is prevented from being reacted with the etching gas to form a compound. Therefore, metals or compounds on the tunnel can be completely etched, and quality of the TFT is further improved.
    Type: Application
    Filed: May 27, 2019
    Publication date: October 28, 2021
    Inventor: Zhiwei TAN
  • Publication number: 20210233942
    Abstract: An array substrate, a manufacturing method and a display panel thereof are provided. A single mask process is used for completing formation of a flat layer and a pixel definition layer, or the flat layer, the pixel definition layer and a spacer. A light emitting unit is located within an anode so that the light of the emitting unit is reflected by the anode to accumulate. The risk of color mixing on the display panel is reduced, and the light intensity on the light exit side is enhanced.
    Type: Application
    Filed: August 30, 2018
    Publication date: July 29, 2021
    Inventors: Hui XIA, Zhiwei TAN
  • Publication number: 20210225884
    Abstract: An array substrate, a manufacturing method thereof, and a display panel are provided in the present application. A gate electrode and source and drain electrodes of different thickness are formed on an electroplated substrate by metal electroplating. By using a height difference between the gate electrode and the source and drain electrodes, a dielectric layer covering the gate electrode and exposing the source and drain electrodes is formed on a substrate, so that an active layer is electrically connected to the source and drain electrodes. Moreover, separation is realized by means of the dielectric layer and the gate electrode, so an etching stop layer is not needed, which simplifies an IGZO manufacturing process and reduces production costs.
    Type: Application
    Filed: August 30, 2018
    Publication date: July 22, 2021
    Inventors: Hui XIA, Zhiwei TAN
  • Patent number: 11056577
    Abstract: A thin-film transistor and a manufacturing method for the same are disclosed.
    Type: Grant
    Filed: August 1, 2018
    Date of Patent: July 6, 2021
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventors: Hui Xia, Zhiwei Tan
  • Publication number: 20210167119
    Abstract: A method of manufacturing a light emitting panel, a light emitting panel, and a display device are disclosed. The method includes providing a substrate, forming a first metal layer on the substrate, performing an oxidation process to the first metal layer to form an oxide layer on the first metal layer, forming a photoresist layer on the oxide layer, patterning the photoresist layer, the oxide layer, and the substrate, and stripping a patterned photoresist layer, and sequentially forming a first passivation layer, a color resist layer, a second passivation layer, and an indium tin oxide film layer on the oxide layer.
    Type: Application
    Filed: May 17, 2019
    Publication date: June 3, 2021
    Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO.,LTD
    Inventor: Zhiwei TAN
  • Publication number: 20210098607
    Abstract: A thin-film transistor and a manufacturing method for the same are disclosed.
    Type: Application
    Filed: August 1, 2018
    Publication date: April 1, 2021
    Inventors: Hui XIA, Zhiwei TAN
  • Patent number: 10461199
    Abstract: The present disclosure discloses a manufacturing method of a thin film transistor, including: forming a gate layer on a substrate; forming a gate insulating layer on the gate layer and the substrate; forming an active layer on the gate insulating layer; and simultaneously forming a source and a drain formed on the active layer by a combination of a chemical plating method and a lift-off method. In the present disclosure, the chemical plating method is combined with the lift-off method, so that the wet-etching method is not used for forming the source and the drain, and thus the IGZO at the channel is not required to be protected by the etching-stop-layer. Therefore, while simplifying the production process, but also can reduce costs.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: October 29, 2019
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventors: Hui Xia, Zhiwei Tan, Shu Jhih Chen
  • Publication number: 20190207030
    Abstract: The present disclosure discloses a manufacturing method of a thin film transistor, including: forming a gate layer on a substrate; forming a gate insulating layer on the gate layer and the substrate; forming an active layer on the gate insulating layer; and simultaneously forming a source and a drain formed on the active layer by a combination of a chemical plating method and a lift-off method. In the present disclosure, the chemical plating method is combined with the lift-off method, so that the wet-etching method is not used for forming the source and the drain, and thus the IGZO at the channel is not required to be protected by the etching-stop-layer. Therefore, while simplifying the production process, but also can reduce costs.
    Type: Application
    Filed: March 5, 2018
    Publication date: July 4, 2019
    Inventors: Hui XIA, Zhiwei TAN, Shu Jhih CHEN
  • Patent number: 10181479
    Abstract: The present invention provides a manufacturing method of an array substrate and an array substrate. The manufacturing method of the array substrate according to the present invention combines the COA technology and the BOA technology, where a black matrix is first formed on a backing plate, followed by forming a top-gate TFT device on the black matrix, and finally forming a color filter layer on the TFT device, wherein the pixel electrode is directly arranged on the drain electrode and connected with the drain electrode. The manufacturing method helps enhance electrical performance of a TFT device and stability of performance, improves quality of a display panel, and, compared to an existing array substrate manufacturing method, reduces masks and operations involved. The manufacturing method is simple and helps reduce manufacturing costs.
    Type: Grant
    Filed: April 14, 2017
    Date of Patent: January 15, 2019
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
    Inventor: Zhiwei Tan
  • Publication number: 20180308868
    Abstract: The present invention provides a manufacturing method of an array substrate and an array substrate. The manufacturing method of the array substrate according to the present invention combines the COA technology and the BOA technology, where a black matrix is first formed on a backing plate, followed by forming a top-gate TFT device on the black matrix, and finally forming a color filter layer on the TFT device, wherein the pixel electrode is directly arranged on the drain electrode and connected with the drain electrode. The manufacturing method helps enhance electrical performance of a TFT device and stability of performance, improves quality of a display panel, and, compared to an existing array substrate manufacturing method, reduces masks and operations involved. The manufacturing method is simple and helps reduce manufacturing costs.
    Type: Application
    Filed: April 14, 2017
    Publication date: October 25, 2018
    Inventor: Zhiwei Tan