Abstract: A flip-chip light-emitting diode includes a first conductivity type semiconductor layer, a light-emitting layer, a second conductivity type semiconductor layer, a first transparent dielectric layer, a second transparent dielectric layer, and a distributed Bragg reflector (DBR) structure which are sequentially stacked. The first transparent dielectric layer has a thickness greater than ?/2n1, wherein A is an emission wavelength of the light-emitting layer, n1 is a refractive index of the first transparent dielectric layer, n2 is a refractive index of the second transparent dielectric layer and is greater than n1, and n2 is lower than a refractive index of the second conductivity type semiconductor layer. A light-emitting apparatus including the aforesaid flip-chip light-emitting diode is also provided.

Abstract: Disclosed are a flip-chip light-emitting element and a light-emitting device. The flip-chip light-emitting element includes an epitaxial layer, a contact electrode, an insulating layer and a pad electrode. The epitaxial layer includes a first semiconductor layer, an active layer and a second semiconductor layer, and a contact electrode is formed on the surface of the epitaxial layer. An insulating layer is formed on the epitaxial layer, and covers the surface, the edge area and the sidewall of the epitaxial layer. A pad electrode is formed on the insulating layer and connected to the contact electrode, and the pad electrode at least covers part of the sidewall of the epitaxial layer. When the flip-chip light-emitting element of the present disclosure is solidified through solder paste, it is possible to prevent Sn and Ag from migrating and ascending into the active layer, thereby improving the reliability of the flip-chip light-emitting element.

Abstract: A flip-chip light-emitting diode includes a first conductivity type semiconductor layer, a light-emitting layer, a second conductivity type semiconductor layer, a first transparent dielectric layer, a second transparent dielectric layer, and a distributed Bragg reflector (DBR) structure which are sequentially stacked. The first transparent dielectric layer has a thickness greater than ?/2n1, and the second transparent dielectric layer has a thickness of m?/4n2, wherein m is an odd number, ? is an emission wavelength of the light-emitting layer, n1 is a refractive index of the first transparent dielectric layer, and n2 is a refractive index of the second transparent dielectric layer and is greater than n1.

Abstract: A battery control method comprising detecting whether a current value of N battery systems is greater than a safe current, where the safe current is a safe current of a target battery system, and the target battery system has a largest resistance difference of parallel branch circuits respectively corresponding to M battery cells in the target battery system, and adjusting the current value of the N battery systems when the current value of the N battery systems is greater than the safe current.

Abstract: This application provides an insulation resistor detection circuit, which includes a state control unit, which is connected between a positive electrode and a negative electrode of a power supply of a to-be-detected apparatus; a first voltage division branch that is connected in parallel to a first capacitor to obtain a first voltage waveform, a second voltage division branch that is connected in parallel to a second capacitor to obtain a second voltage waveform; and a processor that is connected to the state control unit, the first voltage division branch, and the second voltage division branch; determines a next switching moment based on the first voltage waveform and the second voltage waveform that are at a current moment; and control, at the next switching moment, the state control unit to switch a state.