Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a gate electrode, a first source electrode, a second source electrode, and a drain electrode. The second nitride-based semiconductor layer includes a drift region doped, a first barrier region, and a second barrier region. The first and second barrier regions extend downward from a top surface of the second nitride-based semiconductor layer and are separated from each other by a portion of the drift region. The gate electrode is disposed on the first barrier region. The first source electrode is disposed on the portion of the drift region. The second source electrode is disposed on the second barrier region and is electrically coupled with the first source electrode. The drain electrode is connected to the first nitride-based semiconductor layer.

Abstract: Some embodiments of the disclosure provide a semiconductor device. The semiconductor device comprises: a substrate; a first nitride semiconductor layer on the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer and having a band gap greater than a band gap of the first nitride semiconductor layer; a dielectric layer disposed on the first nitride semiconductor layer and in direct contact with the first nitride semiconductor layer and the second nitride semiconductor; a gate electrode separated from the first nitride semiconductor layer and the second nitride semiconductor by the dielectric layer; a first conductive contact disposed on the first nitride semiconductor layer; and a second conductive contact disposed on the second nitride semiconductor layer; wherein the second conductive contact is formed between the gate electrode and the first conductive contact.