Patents by Inventor Zhiwen LIANG

Zhiwen LIANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230168003
    Abstract: An air conditioner includes a base, a housing, an indoor unit, an outdoor unit and an electrical control assembly. The housing is disposed on the base, and an accommodating space is provided between the housing and the base. The indoor unit is located in the accommodating space, and the indoor unit includes an indoor air passage component. The outdoor unit is located in the accommodating space and arranged at an interval with the indoor unit. The outdoor unit includes an outdoor air passage component. At least one of sides of the indoor unit and the outdoor unit proximate to each other is provided with a groove. The electrical control assembly is installed between the indoor air passage component and the outdoor air passage component, and at least a part of the electrical control assembly is installed in the groove.
    Type: Application
    Filed: August 29, 2022
    Publication date: June 1, 2023
    Applicant: Hisense (Guangdong) Air Conditioning Co.,Ltd.
    Inventors: Wei TANG, Dechuang YUAN, Zhiwen LIANG, Hongjie CHEN
  • Publication number: 20230167984
    Abstract: An air conditioner includes an indoor unit, an outdoor unit, and an inductor assembly. The indoor unit includes an indoor air duct component. The outdoor unit includes an outdoor air duct component. The indoor air duct component and the outdoor air duct component are spaced apart. The inductor assembly is located between the indoor air duct component and the outdoor air duct component, and includes an inductor box shell, an inductor and an inductor box cover. The inductor box shell has an accommodating space and includes a shell side plate, a first heat dissipation opening, a first water blocking portion, a shell top plate and a second heat dissipation opening. The inductor is disposed in the accommodating space. The inductor box cover is disposed on top of the inductor box shell, and includes a cover top plate, a third heat dissipation opening and a second water blocking portion.
    Type: Application
    Filed: August 29, 2022
    Publication date: June 1, 2023
    Applicant: Hisense (Guangdong) Air Conditioning Co.,Ltd.
    Inventors: Hongjie CHEN, Wei TANG, Zhiwen LIANG
  • Patent number: 11606892
    Abstract: Provided is a military shovel, including a shovel head and a shovel handle; a rear end of the shovel head is provided with a connection seat; a front end of the shovel handle is provided with a connection head; the connection seat of the shovel head is hinged to the connection head by a hinge shaft; the military shovel further includes a locking mechanism for fixing the shovel head, the locking mechanism is disposed on the front end of the shovel handle; three locating holes are provided in a sidewall of the connection seat; a locating protrusion is disposed on a sidewall of the connection head; the sidewall of the connection seat where the three locating holes are located is opposite to the sidewall of the connection head where the locating protrusion is located.
    Type: Grant
    Filed: June 10, 2020
    Date of Patent: March 21, 2023
    Assignee: BINOVO MANUFACTURING CO., LTD.
    Inventors: Houkun Liang, Zhiwen Liang
  • Publication number: 20210082785
    Abstract: A semiconductor power device includes a substrate, a power chip, and a capping layer, and the substrate has a patterned unit, and the thickness of the substrate is matched with the configuration of the power chip, and the height of the power chip is smaller than the thickness of the substrate, and the power chip is installed at a position corresponding to the patterned unit, and the capping layer is covered onto a side of the patterned unit having the substrate, and the power chip is covered by the capping layer and installed to the substrate. This invention features a simple structure and reasonable design. Since the height of the patterned unit is matched with the thickness of the power chip, therefore the height of the installed power chip is lower than the substrate to facilitate the installation of the capping layer and the dissipation of heat.
    Type: Application
    Filed: July 31, 2020
    Publication date: March 18, 2021
    Inventors: Zhiwen LIANG, Qi WANG, Qing WANG, Guoyi ZHANG
  • Publication number: 20200390017
    Abstract: Some embodiments of the present disclosure provide a military shovel, including a shovel head and a shovel handle; a rear end of the shovel head is provided with a connection seat; a front end of the shovel handle is provided with a connection head; the connection seat of the shovel head is hinged to the connection head by a hinge shaft; the military shovel further includes a locking mechanism for fixing the shovel head, the locking mechanism is disposed on the front end of the shovel handle; three locating holes are provided in a sidewall of the connection seat; a locating protrusion is disposed on a sidewall of the connection head; the sidewall of the connection seat where the three locating holes are located is opposite to the sidewall of the connection head where the locating protrusion is located.
    Type: Application
    Filed: June 10, 2020
    Publication date: December 17, 2020
    Inventors: Houkun LIANG, Zhiwen LIANG
  • Patent number: 9611564
    Abstract: An apparatus and method for growing nitride bulk single crystal, including an autoclave having a pre-growth zone and a growth zone. With control of the concentration of a saturated solution in a pre-growth chamber, the oversaturation reaction conditions for the overall process of growth of the nitride bulk single crystal can be regulated. By regulating the liquid level difference of the melt on an upper surface of a seed crystal, nucleation growth of N/Ga is preferentially performed on the surface of the seed crystal, which suppresses polycrystal formation at a gas-liquid interface and improves the growth rate of crystal and the utilization rate of raw materials.
    Type: Grant
    Filed: July 9, 2014
    Date of Patent: April 4, 2017
    Inventors: Nanliu Liu, Zhiwen Liang, Jiao Chen, Guoyi Zhang
  • Publication number: 20150292108
    Abstract: An apparatus and method for growing nitride bulk single crystal, including an autoclave having a pre-growth zone and a growth zone. With control of the concentration of a saturated solution in a pre-growth chamber, the oversaturation reaction conditions for the overall process of growth of the nitride bulk single crystal can be regulated. By regulating the liquid level difference of the melt on an upper surface of a seed crystal, nucleation growth of N/Ga is preferentially performed on the surface of the seed crystal, which suppresses polycrystal formation at a gas-liquid interface and improves the growth rate of crystal and the utilization rate of raw materials.
    Type: Application
    Filed: July 9, 2014
    Publication date: October 15, 2015
    Inventors: Nanliu LIU, Zhiwen LIANG, Jiao CHEN, Guoyi ZHANG