Patents by Inventor Zhixiang ZUO

Zhixiang ZUO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Mesoscopic framework for organic-inorganic perovskite based photoelectric conversion device and method for manufacturing the same
    Patent number: 10515767
    Abstract: The invention discloses a perovskite solar cell and a method of fabrication thereof. The perovskite solar cell sequentially comprises a transparent electrode, a mesoporous P-I-N framework and a counter electrode from the bottom to top; the mesoporous P-I-N framework is composed of an n-type semiconductor layer, an insulating layer, and a p-type semiconductor layer in a sequentially stacked mode, and the n-type semiconductor layer, the insulating layer and the p-type semiconductor layer all comprise mesopores filled with a perovskite material. The preparation method sequentially includes preparing the mesoporous P-I-N framework on a transparent conductive substrate through a spin-coating method or a screen printing method, filling with the perovskite material and preparing the counter electrode layer.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: December 24, 2019
    Assignees: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL), HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Mingkui Wang, Kun Cao, Jin Cui, Zhixiang Zuo, Yan Shen, Shaik Mohammad Zakeeruddin, Michael Graetzel
  • MESOSCOPIC FRAMEWORK FOR ORGANIC-INORGANIC PEROVSKITE BASED PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20170213651
    Abstract: The invention discloses a perovskite solar cell and a method of fabrication thereof. The perovskite solar cell sequentially comprises a transparent electrode, a mesoporous P-I-N framework and a counter electrode from the bottom to top; the mesoporous P-I-N framework is composed of an n-type semiconductor layer, an insulating layer, and a p-type semiconductor layer in a sequentially stacked mode, and the n-type semiconductor layer, the insulating layer and the p-type semiconductor layer all comprise mesopores filled with a perovskite material. The preparation method sequentially includes preparing the mesoporous P-I-N framework on a transparent conductive substrate through a spin-coating method or a screen printing method, filling with the perovskite material and preparing the counter electrode layer.
    Type: Application
    Filed: July 24, 2015
    Publication date: July 27, 2017
    Inventors: Mingkui WANG, Kun CAO, Jin CUI, Zhixiang ZUO, Yan SHEN, Shaik Mohammad ZAKEERUDDIN, Michael GRAETZEL