Patents by Inventor Zhi-Xun Shen
Zhi-Xun Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11205554Abstract: The embodiments provide a thermionic emission device and a method for tuning a work function in a thermionic emission device is provided. The method includes illuminating an N type semiconductor material of a first member of a thermionic emission device, wherein a work function of the N type semiconductor material is lowered by the illuminating. The method includes collecting, on one of the first member or a second member of the thermionic emission device, electrons emitted from one of the first member or the second member.Type: GrantFiled: July 16, 2014Date of Patent: December 21, 2021Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Daniel Riley, Kunal Sahasrabuddhe, Igor Bargatin, Jared W. Schwede, Zhi-Xun Shen, Nicholas A. Melosh
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Publication number: 20130336873Abstract: Methods of growing diamond and resulting diamond nanoparticles and diamond films are described herein. An example of a method of growing diamond includes: (1) anchoring diamondoids to a substrate via chemical bonding between the diamondoids and the substrate; (2) forming a protective layer over the diamondoids; and (3) performing chemical vapor deposition using a carbon source to induce diamond growth over the protective layer and the diamondoids.Type: ApplicationFiled: March 15, 2013Publication date: December 19, 2013Inventors: Hitoshi Ishiwata, Zhi-Xun Shen, Nicholas A. Melosh, Jeremy Dahl
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Patent number: 8569941Abstract: Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.Type: GrantFiled: April 9, 2012Date of Patent: October 29, 2013Assignees: The Board of Trustees of the Leland Stanford Junior University, The Regents of the University of CaliforniaInventors: Wanli Yang, Jason D. Fabbri, Nicholas A. Melosh, Zahid Hussain, Zhi-Xun Shen
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Patent number: 8266718Abstract: A microwave microscope including a probe tip electrode vertically positionable over a sample and projecting downwardly from the end of a cantilever. A transmission line connecting the tip electrode to the electronic control system extends along the cantilever and is separated from a ground plane at the bottom of the cantilever by a dielectric layer. The probe tip may be vertically tapped near or at the sample surface at a low frequency and the microwave signal reflected from the tip/sample interaction is demodulated at the low frequency. Alternatively, a low-frequency electrical signal is also a non-linear electrical element associated with the probe tip to non-linearly interact with the applied microwave signal and the reflected non-linear microwave signal is detected at the low frequency. The non-linear element may be semiconductor junction formed near the apex of the probe tip or be an FET formed at the base of a semiconducting tip.Type: GrantFiled: February 16, 2010Date of Patent: September 11, 2012Assignee: The Board of Trustees of Leland Stanford Junior UniversityInventors: Keji Lai, Michael Kelly, Zhi-Xun Shen
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Publication number: 20120212153Abstract: Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.Type: ApplicationFiled: April 9, 2012Publication date: August 23, 2012Applicants: The Regents of the University of California, The Board of Trustees of the Leland Stanford Junior UniversityInventors: Wanli YANG, Jason D. Fabbri, Nicholas A. Melosh, Zahid Hussain, Zhi-Xun Shen
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Patent number: 8154185Abstract: Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.Type: GrantFiled: February 12, 2007Date of Patent: April 10, 2012Assignees: The Board of Trustees of the Leland Stanford Junior University, The Regents of the University of CaliforniaInventors: Wanli Yang, Jason D. Fabbri, Nicholas A. Melosh, Zahid Hussain, Zhi-Xun Shen
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Publication number: 20110308605Abstract: Provided is a fluorescent diamondoid material which when energized, either by an electric field or by high energy radiation, emits light. The light emitted is generally in the visible range. The diamondoid material can be fine tuned by internal or external doping. The fluorescent materials comprised of diamondoids, have applications in several fields. One application is in solar cells where these materials can be used to improve the overall efficiency of the device. A second application is in indoor lighting where the materials can be used to efficiently produce white light. This can be done by either using the material as a fluorescent medium for a UV light source, in an electroluminescence device, or by using the material as part of an organic light emitting diode (OLED).Type: ApplicationFiled: January 30, 2009Publication date: December 22, 2011Applicants: Justus-Liebig-Universitaet Giessen, Leland J. Stanford Junior UnivesityInventors: Zhi Liu, Will Clay, Michael A. Kelly, Nicholas A. Melosh, Zhi-Xun Shen, Andrey A. Fokin, Peter R. Schreiner
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Publication number: 20110082053Abstract: Provided is a molecular rectifier comprised of a diamondoid molecule and an electron acceptor attached to the diamondoid molecule. The electron acceptor is generally an electron accepting aromatic species which is covalently attached to the diamondoid.Type: ApplicationFiled: January 30, 2009Publication date: April 7, 2011Inventors: Wanli Yang, Zhi-Xun Shen, Harindran C. Manoharan, Nicholas A. Melosh, Michael A. Kelly, Andrey A. Fokin, Peter R. Schreiner, Jason C. Randel
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Publication number: 20100218286Abstract: A microwave microscope including a probe tip electrode vertically positionable over a sample and projecting downwardly from the end of a cantilever. A transmission line connecting the tip electrode to the electronic control system extends along the cantilever and is separated from a ground plane at the bottom of the cantilever by a dielectric layer. The probe tip may be vertically tapped near or at the sample surface at a low frequency and the microwave signal reflected from the tip/sample interaction is demodulated at the low frequency. Alternatively, a low-frequency electrical signal is also a non-linear electrical element associated with the probe tip to non-linearly interact with the applied microwave signal and the reflected non-linear microwave signal is detected at the low frequency. The non-linear element may be semiconductor junction formed near the apex of the probe tip or be an FET formed at the base of a semiconducting tip.Type: ApplicationFiled: February 16, 2010Publication date: August 26, 2010Applicant: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Keji Lai, Michael Kelly, Zhi-Xun Shen
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Publication number: 20090309484Abstract: Novel direct band gap crystalline nanodiamonds and light emitting devices utilizing the direct band gap crystalline nanodiamonds are disclosed. With providing the detailed information on the electronic states and the electron band structure of several crystalline nanodiamonds, preferred device structures including an electroluminescence-based solid-state light source and a cathode-luminescence-based micro light source are shown. These devices emit light in the region of ultraviolet wavelength, which can be designed from 180 nm to 230 nm by a choice of nanodiamonds, with referring to the information provided in the present invention. The related applications of these UV light emitting devices include a light source for sterilization, a light source for decomposing harmful substances, a light source for spectroscopy, a light source for exciting a phosphor to emit a white light, a micro light source for micro optoelectronic devices, and a light source for writing a super high density recording media.Type: ApplicationFiled: June 13, 2008Publication date: December 17, 2009Applicants: TOKYO INSTITUTE OF TECHNOLOGY, THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITYInventors: Takao Sasagawa, Zhi-Xun Shen
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Publication number: 20080191598Abstract: Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.Type: ApplicationFiled: February 12, 2007Publication date: August 14, 2008Applicants: The Board of Trustees of the Leland Stanford Junior University, The Regents of the University of CaliforniaInventors: Wanli Yang, Jason D. Fabbri, Nicholas A. Melosh, Zahid Hussain, Zhi-Xun Shen
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Patent number: 7190175Abstract: A microwave imaging microscope and associated probe, or a read head. The probe or the read head includes a sensor unit with three fixed electrodes, preferably a stimulating electrode surrounding a sensing electrode and isolated by a grounded electrode. Circuitry couples the stimulating electrode to the probe signal variably selected in the range of 100 MHz to 100 GHz and couples the sensing electrode to a signal processor detecting in-phase and out-of-phase components of the current or voltage across the sensing electrode and the grounded electrode. A mechanical positioner moves the probe vertically towards the sample and scans it across the sample. The probe may be formed by semiconductor processing methods on a silicon chip.Type: GrantFiled: May 27, 2005Date of Patent: March 13, 2007Assignee: Stanford UniversityInventors: Michael Kelly, Zhengyu Wang, Zhi-Xun Shen
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Patent number: 6825645Abstract: A non-resonant microwave imaging microscope and associated probe. The probe includes a sensor unit with two fixed electrodes, preferably a large outer electrode surrounding a small inner electrode which are approximately co-planar, thereby protecting the small inner electrode from an uneven topography. The outer electrode may be deposited on a conically shaped dielectric disk having a bore through which the inner electrode is placed. Non-resonant circuitry couples the inner electrode to the probe signal variably selected in the range of 10 MHz-50 GHz and to an amplifier whose output is coupled to a signal processor detector in-phase and out-of-phase components of the current or voltage across the two electrodes. A mechanical positioner moves the probe vertically towards the sample and scans it across the sample.Type: GrantFiled: October 7, 2002Date of Patent: November 30, 2004Assignee: Stanford University Office of Technology LicensingInventors: Michael A. Kelly, Zhi-Xun Shen, Zhengyu Wang
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Publication number: 20030071605Abstract: A non-resonant microwave imaging microscope and associated probe. The probe includes a sensor unit with two fixed electrodes, preferably a large outer electrode surrounding a small inner electrode which are approximately co-planar, thereby protecting the small inner electrode from an uneven topography. The outer electrode may be deposited on a conically shaped dielectric disk having a bore through which the inner electrode is placed. Non-resonant circuitry couples the inner electrode to the probe signal variably selected in the range of 10 MHz-50 GHz and to an amplifier whose output is coupled to a signal processor detector in-phase and out-of-phase components of the current or voltage across the two electrodes. A mechanical positioner moves the probe vertically towards the sample and scans it across the sample.Type: ApplicationFiled: October 7, 2002Publication date: April 17, 2003Inventors: Michael A. Kelly, Zhi-Xun Shen, Zhengyu Wang