Abstract: An apparatus and method for processing anode plate for electrolysis, the apparatus includes a transverse transmission device (3) for transmitting the anode plate in a transverse direction; a plate-flattening and thickness-measuring device (4) for flattening the anode plate and measuring a thickness of the anode plate; a hanger bottom milling device (6) configured to mill a bottom surface of a hanger of the anode plate, disposed at a first side of the transverse transmission device (3) and positioned downstream of the plate-flattening and thickness-measuring device (4) in the transverse direction; and a hanger side milling device (5) configured to mill a side surface of the hanger of the anode plate, disposed at a second side of the transverse transmission device (3) and positioned downstream of the plate-flattening and thickness-measuring device (4) in the transverse direction.

Abstract: A manufacturing method of a light-emitting diode device. The light-emitting diode device comprises: a substrate (1); an epitaxial layer at one side of the substrate (1) and comprising an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further comprises an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.

Abstract: A manufacturing method of a light-emitting diode device. The light-emitting diode device comprises: a substrate (1); an epitaxial layer at one side of the substrate (1) and comprising an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further comprises an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.

Abstract: A light-emitting diode device and a manufacturing method thereof. The light-emitting diode device includes: a substrate (1); an epitaxial layer at one side of the substrate (1) and including an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further includes an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the light-emitting diode device and the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.

Abstract: A light-emitting diode device and a manufacturing method thereof. The light-emitting diode device comprises: a substrate (1); an epitaxial layer at one side of the substrate (1) and comprising an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further comprises an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the light-emitting diode device and the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.

Abstract: An apparatus and method for processing anode plate for electrolysis, the apparatus includes a transverse transmission device (3) for transmitting the anode plate in a transverse direction; a plate-flattening and thickness-measuring device (4) for flattening the anode plate and measuring a thickness of the anode plate; a hanger bottom milling device (5) configured to mill a bottom surface of a hanger of the anode plate, disposed at a first side of the transverse transmission device (3) and positioned downstream of the plate-flattening and thickness- measuring device (4) in the transverse direction; and a hanger side milling device (6) configured to mill a side surface of the hanger of the anode plate, disposed at a second side of the transverse transmission device (3) and positioned downstream of the plate-flattening and thickness-measuring device (4) in the transverse direction.