Abstract: Disclosed are a new AXL-targeting monoclonal antibody and antibody-drug conjugate. Also disclosed is a method for preparing said antibody and antibody-drug conjugate. The AXL antibody of the present invention can bind with purified human AXL protein and multiple AXL on tumor cell surface with high effectiveness and high specificity. Said humanized antibody also has high affinity and low immunogenicity. Said AXL antibody-drug conjugate has markable performance against tumors having high AXL expression.

Abstract: Intelligent real-time blood glucose monitoring system and method based on cloud big data is disclosed. The system includes an implantable dynamic glucose sensor, a smart phone, a blood glucose monitoring software application installed on the smart phone, a finger blood glucose meter, and a big data cloud server. By processing historical blood glucose measurement data of a user stored in the cloud, the monitoring system effectively corrects and influences signal differences produced by individual users so as to ensure the validity and accuracy of measurement signals during sensor operation.

Abstract: An apparatus and method for processing anode plate for electrolysis, the apparatus includes a transverse transmission device (3) for transmitting the anode plate in a transverse direction; a plate-flattening and thickness-measuring device (4) for flattening the anode plate and measuring a thickness of the anode plate; a hanger bottom milling device (6) configured to mill a bottom surface of a hanger of the anode plate, disposed at a first side of the transverse transmission device (3) and positioned downstream of the plate-flattening and thickness-measuring device (4) in the transverse direction; and a hanger side milling device (5) configured to mill a side surface of the hanger of the anode plate, disposed at a second side of the transverse transmission device (3) and positioned downstream of the plate-flattening and thickness-measuring device (4) in the transverse direction.

Abstract: A manufacturing method of a light-emitting diode device. The light-emitting diode device comprises: a substrate (1); an epitaxial layer at one side of the substrate (1) and comprising an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further comprises an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.

Abstract: A manufacturing method of a light-emitting diode device. The light-emitting diode device comprises: a substrate (1); an epitaxial layer at one side of the substrate (1) and comprising an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further comprises an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.

Abstract: A light-emitting diode device and a manufacturing method thereof. The light-emitting diode device includes: a substrate (1); an epitaxial layer at one side of the substrate (1) and including an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further includes an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the light-emitting diode device and the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.

Abstract: A light-emitting diode device and a manufacturing method thereof. The light-emitting diode device comprises: a substrate (1); an epitaxial layer at one side of the substrate (1) and comprising an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further comprises an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the light-emitting diode device and the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.

Abstract: An apparatus and method for processing anode plate for electrolysis, the apparatus includes a transverse transmission device (3) for transmitting the anode plate in a transverse direction; a plate-flattening and thickness-measuring device (4) for flattening the anode plate and measuring a thickness of the anode plate; a hanger bottom milling device (5) configured to mill a bottom surface of a hanger of the anode plate, disposed at a first side of the transverse transmission device (3) and positioned downstream of the plate-flattening and thickness- measuring device (4) in the transverse direction; and a hanger side milling device (6) configured to mill a side surface of the hanger of the anode plate, disposed at a second side of the transverse transmission device (3) and positioned downstream of the plate-flattening and thickness-measuring device (4) in the transverse direction.