Abstract: A control method includes: outputting first image data of a first electronic device, obtaining a first control instruction, and switching to outputting second image data of a second electronic device. The first control instruction is used to control the first electronic device to switch from a first state to a second state. The power consumption of the first electronic device in the first state being greater than the power consumption in the second state. The second electronic device is communicatively connected with the first electronic device.

Abstract: A processing method includes: outputting, by first display device, trigger information to a second display device in response to a trigger condition being met; obtaining, by the first display device, second identification information output by the second display device in response to the trigger information; obtaining, by the first display device, first identification information of the first display device; and transmitting, by the first display device, the first identification information and the second identification information to an electronic device, the first identification information and the second identification information representing a connection sequence of the first display device and the second display device. The electronic device, the first display device, and the second display device are connected in sequence, and the first display device obtains first image data from the electronic device and transmits part or all of the first image data to the second display device.

Abstract: The present application provides a semiconductor device and a manufacturing method thereof and a memory system. The manufacturing method of the semiconductor device includes: forming a dielectric layer on a stack layer, wherein memory channel structures penetrating through the stack layer along a first direction are disposed in the stack layer, and the first direction is parallel to a stacking direction of the stack layer; forming a plurality of openings penetrating through the dielectric layer along the first direction, with the rest of the dielectric layer forming top selective gate cut lines, wherein the plurality of openings are arranged as being spaced apart along a second direction, one of the top selective gate cut lines is located between two adjacent ones of the openings in the second direction, and the first direction intersects the second direction; and forming a top selective gate layer in the plurality of openings.

Abstract: Memory device, memory system and formation method are provided. The method includes forming a sacrificial layer over a dielectric-pair stack, the sacrificial layer containing a top selective gate (TSG) cut structure over the dielectric-pair stack; forming a channel plug structure including a lower plug portion in the dielectric-pair stack and an upper plug portion through the sacrificial layer; forming a barrier layer at least enveloping the upper plug portion of the channel plug structure after a removal of the sacrificial layer; and forming a semiconductor layer over the dielectric-pair stack to embed the TSG cut structure, the barrier layer, and the upper plug portion of the channel plug structure.

Abstract: Memory device, memory system, and formation method are provided. The formation method includes providing a dielectric-pair stack containing a channel layer extending there-through, and forming a sacrificial layer in the dielectric-pair stack and in contact with the channel layer; forming a semiconductor layer over the dielectric-pair stack, the semiconductor layer containing a top selective gate (TSG) cut structure; forming a trench through the semiconductor layer to expose the sacrificial layer; forming a barrier layer on sidewalls of the semiconductor layer exposed by the trench; forming a recess by removing the sacrificial layer; and forming a channel plug structure in the trench and the recess.

Abstract: Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a 3D memory device includes a first semiconductor structure including alternating first dielectric layers and first conductive layers, an array common source (ACS) film over the first semiconductor structure, a second semiconductor structure over the ACS film, and a channel structure extending in the first semiconductor structure, the ACS film, and the second semiconductor structure in a first direction. The second semiconductor structure includes alternating second dielectric layers and second conductive layers. The channel structure is electrically connected to the ACS film.

Abstract: Semiconductor components, fabrication methods thereof and memory systems. A fabrication method includes performing trap repairing on a first wafer at a first temperature, the first wafer including memory cells; bonding the first wafer with a second wafer to form a semiconductor component, the second wafer including a device layer; and repairing the semiconductor component at a second temperature lower than the first temperature.

Abstract: Metal Organic Frameworks (MOFs), methods of using the MOFs for harvesting water from air, and methods of making the MOFs are provided. The water-harvesting MOFs include a metal organic framework molecule having positively charged, linker unsaturated nodes and a net positive electrical charge and charge-compensating anions contained within pores of the metal organic framework molecules. The charge-compensating ions are not anchored to the metal organic framework molecules via coordination bonds and, therefore, are able to move through the porous MOF structure when they are solvated in liquid water contained within the pores.

Abstract: Three-dimensional (3D) NAND memory devices and methods are provided. In one aspect, a fabrication method includes forming a conductor/insulator stack over a substrate, forming a dielectric layer of a dielectric material including atomic hydrogen over a part of the conductor/insulator stack, and performing a thermal process to release the atomic hydrogen from the dielectric material and diffuse the atomic hydrogen into the conductor/insulator stack.

Abstract: Disclosed herein are systems and methods for predicting risk of late age-related macular degeneration (AMD). The method may include receiving one or more color fundus photograph (CFP) images from both eyes of a patient, classifying each CFP image, and predicting the risk of late AMD by estimating a time to late AMD. Classifying each CFP image may include extract one or more deep features for macular drusen and pigmentary abnormalities in each CFP image, grading the drusen and pigmentary abnormalities and/or detecting the presence of RPD in each CFP image. Predicting the risk of late AMD may include estimating a time to late AMD using a Cox proportional hazard model using the presence of RPD, the one or more deep features, and/or the graded drusen and pigmentary abnormalities.

Abstract: A new chest X-ray database, referred to as “ChestX-ray8”, is disclosed herein, which comprises over 100,000 frontal view X-ray images of over 32,000 unique patients with the text-mined eight disease image labels (where each image can have multi-labels), from the associated radiological reports using natural language processing. We demonstrate that these commonly occurring thoracic diseases can be detected and spatially-located via a unified weakly supervised multi-label image classification and disease localization framework, which is validated using our disclosed dataset.

Abstract: An apparatus and method herein efficiently couple spatial light to optical fiber light for achieving stability of an optical axis without a position sensor. The basic concept of the method includes: first, obtaining, according to a theoretical coupling efficiency model, a model parameter by means of fitting calculation; second, using a four-point tracking algorithm to calculate an optical fiber nutation trajectory according to the optical fiber nutation principle; and finally, using the nutation trajectory to calculate the position deviation of a central point. The optical axis is ensured to be stable by correcting the position deviation, and the high coupling efficiency remains. The method is used for the stability of the optical axis in a space coherent laser communication DPSK link. The high efficiency coupling is a key technology of long-distance, high bit rate transmission in space laser communication, and is significant in the development of inter-satellite optical communications.

Abstract: This application discloses an information processing method performed at an application server. The application server receives a first virtual article identifier and a first account sent by a terminal in response to an operation of a user on a virtual article presentation interface. The server generates and stores a first order including the first virtual article identifier and the first account, obtains a current bill provided by a payment system and forwarded by the terminal, and a second account used to log into the terminal. The server determines a second order corresponding to the current bill, associates the current bill with the second order when a virtual article identifier and an account in the second order are the same as the second virtual article identifier and the second account; and sends a virtual article corresponding to the second virtual article identifier to the second account.

Abstract: An apparatus and method herein efficiently couple spatial light to optical fiber light for achieving stability of an optical axis without a position sensor. The basic concept of the method includes: first, obtaining, according to a theoretical coupling efficiency model, a model parameter by means of fitting calculation; second, using a four-point tracking algorithm to calculate an optical fiber nutation trajectory according to the optical fiber nutation principle; and finally, using the nutation trajectory to calculate the position deviation of a central point. The optical axis is ensured to be stable by correcting the position deviation, and the high coupling efficiency remains. The method is used for the stability of the optical axis in a space coherent laser communication DPSK link. The high efficiency coupling is a key technology of long-distance, high bit rate transmission in space laser communication, and is significant in the development of inter-satellite optical communications.

Abstract: A new chest X-ray database, referred to as “ChestX-ray8”, is disclosed herein, which comprises over 100,000 frontal view X-ray images of over 32,000 unique patients with the text-mined eight disease image labels (where each image can have multi-labels), from the associated radiological reports using natural language processing. We demonstrate that these commonly occurring thoracic diseases can be detected and spatially-located via a unified weakly supervised multi-label image classification and disease localization framework, which is validated using our disclosed dataset.

Abstract: This application discloses an information processing method performed at an application server. The application server receives a first virtual article identifier and a first account sent by a terminal in response to an operation of a user on a virtual article presentation interface. The server generates and stores a first order including the first virtual article identifier and the first account, obtains a current bill provided by a payment system and forwarded by the terminal, and a second account used to log into the terminal. The server determines a second order corresponding to the current bill, associates the current bill with the second order when a virtual article identifier and an account in the second order are the same as the second virtual article identifier and the second account; and sends a virtual article corresponding to the second virtual article identifier to the second account.

Abstract: A trolley case capable of displaying weight in a static state allows the bracket fixing shaft not to offset in a radial direction through the configurations of a directional bearing and shaft liner, and allows a weighing transducer to sense the weight of a case body accurately by installing the weighing transducer on the directional bearing and fixing the weighing transducer to the upper end face of the bracket fixing shaft, thereby not causing a weight displaying value to change, realizing a static display, and thus giving users the convenience of use.

Abstract: A trolley case capable of displaying weight in a static state allows the bracket fixing shaft not to offset in a radial direction through the configurations of a directional bearing and shaft liner, and allows a weighing transducer to sense the weight of a case body accurately by installing the weighing transducer on the directional bearing and fixing the weighing transducer to the upper end face of the bracket fixing shaft, thereby not causing a weight displaying value to change, realizing a static display, and thus giving users the convenience of use.

Abstract: A semiconductor device is provided that has a plurality of Fin structures extending on a substrate along a first direction; a gate stack structure extending on the substrate along a second direction and across the plurality of Fin structures, wherein the gate stack structure comprises a gate conductive layer and a gate insulating layer, and the gate conductive layer is formed by a doped poly-semiconductor; trench regions in the plurality of Fin structures and beneath the gate stack structure; and source/drain regions on the plurality of Fin structures and at both sides of the gate stack structure along the first direction. A method of manufacturing a semiconductor device is also provided.

Abstract: A semiconductor device is provided that has a plurality of Fin structures extending on a substrate along a first direction; a gate stack structure extending on the substrate along a second direction and across the plurality of Fin structures, wherein the gate stack structure comprises a gate conductive layer and a gate insulating layer, and the gate conductive layer is formed by a doped poly-semiconductor; trench regions in the plurality of Fin structures and beneath the gate stack structure; and source/drain regions on the plurality of Fin structures and at both sides of the gate stack structure along the first direction. A method of manufacturing a semiconductor device is also provided.