Abstract: The present disclosure discloses a linear motor including a housing with an accommodation space, a vibrator and a stator received in the accommodation space and an elastic support fixed on the vibrator and configured to suspend the vibrator in the accommodation space; the stator includes a coil and a copper ring both opposite to the vibrator; the copper ring and the coil are arranged on two opposite sides of the vibrator separately along a first direction perpendicular with a vibration direction of the vibrator. The copper ring serves as a damper providing electromagnetic resilience for the vibrator, effectively improve the automation and efficiency of the manufacture of the linear vibration motor.

Abstract: Provided are small molecule inhibitors of the KRAS(G12D) mutant oncoprotein having the structural formula: and pharmaceutically acceptable salts and compositions thereof, which are useful for treating cancers and related conditions.

Abstract: The present disclosure discloses a linear motor having a housing with an accommodation space, a vibration unit and a driving unit received in the accommodation. The vibrator unit includes a weight with a receiving space and a magnet unit fixed on the weight and inside the receiving space. The driving unit includes an iron core received in the receiving space, two pole pieces respectively fixed on two opposite ends of the iron core along a vibration direction and a coil wound around the iron core. A groove is provided on the pole piece and faces the magnet unit along a first direction perpendicular with the vibration direction. The distance between the pole piece and the magnet unit increases, effectively decreasing the magnetic attraction force between the pole piece and magnet unit and avoiding the non-linear vibration of the linear vibration motor.

Abstract: One of the objects of the present disclosure is to provide a linear vibration motor which improves the rigidity of the whole system and ensures enhanced stability. The present disclosure provides a linear vibration motor having a housing body; a stator including at least two solenoid assemblies with parallel axes; a vibrator installed in the housing body; and an elastic connector suspending the vibrator in the housing body. The vibrator includes a first magnet assembly being located between two adjacent at least two solenoid assemblies and including a first magnet and a second magnet. Magnetization directions of the first magnet and the second magnet are opposite and parallel to an axial direction of the solenoid assembly.

Abstract: Pulsed beam prober systems, devices, and techniques are described herein related to providing a beam detection frequency that is less than a electrical test frequency. An electrical test signal at the electrical test frequency is provided to die under test. A pulsed beam is applied to the die such that the pulsed beam has packets of beam pulses or a frequency delta with respect to the electrical test frequency. The packets of beam pulses or the frequency delta elicits a detectable beam modulation in an imaging signal reflected from the die such that the imaging signal is modulated at a detection frequency less than the electrical test frequency.

Abstract: Wafer level electron beam prober systems, devices, and techniques, are described herein related to providing wafer level testing for fabricated device structures. Such wafer level testing contacts a first side of a die of a wafer with a probe to provide test signals to the die under test and performs e-beam imaging of the first side of the die while the test signals are provided to the die under test.

Abstract: Techniques are disclosed for providing cladded metal interconnects. Given an interconnect trench, a barrier layer is conformally deposited onto the bottom and sidewalls of the trench. A first layer of a bilayer adhesion liner is selectively deposited on the barrier layer, and a second layer of the bilayer adhesion liner is selectively deposited on the first layer. An interconnect metal is deposited into the trench above the bilayer adhesion liner. Any excess interconnect metal is recessed to get the top surface of the interconnect metal to a proper plane. Recessing the excess interconnect metal may include recessing previously deposited excess adhesion liner and barrier layer materials. The exposed top surface of the interconnect metal in the trench is then capped with the bilayer adhesion liner materials to provide a cladded metal interconnect core. In some embodiments, the adhesion liner is a single layer adhesion liner.

Abstract: The present invention disclosed a wall-cloth with a laminated core coated through infiltration, a method for making the same and a method for an object, wherein, the wall-cloth comprises a prime coating layer, a laminated core complex covered on the prime coating layer; wherein the laminated core complex comprises a second coating layer which can be transparent or semi-transparent and a fiber sheet encapsulated in the second coating layer; and wherein, the fiber sheet possesses a network structure formed by fiber or fibers, and the second coating layer permeates into the meshes of the network structure. According to the present invention, the texture is controlled, because the fiber sheet can be produced according to a standard and large scale method to obtain identical texture. Meanwhile, the wall-cloth made by the present invention has excellence breathability and great gas transmission.

Abstract: Techniques are disclosed for providing cladded metal interconnects. Given an interconnect trench, a barrier layer is conformally deposited onto the bottom and sidewalls of the trench. A first layer of a bilayer adhesion liner is selectively deposited on the barrier layer, and a second layer of the bilayer adhesion liner is selectively deposited on the first layer. An interconnect metal is deposited into the trench above the bilayer adhesion liner. Any excess interconnect metal is recessed to get the top surface of the interconnect metal to a proper plane. Recessing the excess interconnect metal may include recessing previously deposited excess adhesion liner and barrier layer materials. The exposed top surface of the interconnect metal in the trench is then capped with the bilayer adhesion liner materials to provide a cladded metal interconnect core. In some embodiments, the adhesion liner is a single layer adhesion liner.

Abstract: The controlled modification of an antifuse programming voltage is described. In one example, an antifuse circuit is formed on a substrate, including a gate area of the antifuse circuit. A molecule is implanted into the gate area to damage the structure of the gate area. Electrodes are formed over the gate areas to connect the antifuse circuit to other components.

Abstract: Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.

Abstract: Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.

Abstract: Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.

Abstract: Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.

Abstract: A tamper resistant fuse design is generally presented. In this regard, an apparatus is introduced comprising a plurality of fuses in an integrated circuit device to store values and a plurality of resistors in parallel to the fuses, wherein each fuse includes a parallel resistor to provide a potential dissipation path around the fuse. Other embodiments are also described and claimed.

Abstract: A tamper resistant fuse design is generally presented. In this regard, an apparatus is introduced comprising a plurality of fuses in an integrated circuit device to store values and a plurality of resistors in parallel to the fuses, wherein each fuse includes a parallel resistor to provide a potential dissipation path around the fuse. Other embodiments are also described and claimed.

Abstract: A semiconductor substrate having metal oxide semiconductor (MOS) devices, such as an integrated circuit die, is mechanically coupled to a stress structure to apply a stress that improves the performance of at least a portion of the MOS devices on the die.

Abstract: A semiconductor substrate having metal oxide semiconductor (MOS) devices, such as an integrated circuit die, is mechanically coupled to a stress structure to apply a stress that improves the performance of at least a portion of the MOS devices on the die.

Abstract: The present invention describes a method including providing a component, the component having a bond pad; forming a passivation layer over the component; forming a via in the passivation layer to uncover the bond pad; and forming an under bump metallurgy (UBM) over the passivation layer, in the via, and over the bond pad, in which the UBM includes an alloy of Aluminum and Magnesium. The present invention also describes an under bump metallurgy (UBM) that includes a lower layer, the lower layer including an alloy of Aluminum and Magnesium; and an upper layer located over the lower layer.

Abstract: The invention relates to a ball limiting metallurgy stack for an electrical device that contains a tin diffusion barrier and thermo-mechanical buffer layer disposed upon a refractory metal first layer. The multi-diffusion barrier layer stack resists tin migration toward the upper metallization of the device.