Abstract: An ion source baffle includes a baffle body, wherein the baffle body is of a hollow structure; baffles are symmetrically fixedly arranged on an inner wall of the baffle body; the baffles extend towards the center of the baffle body; and in the direction from the inner wall of the baffle body towards the center of the baffle body, a shielding area formed by the baffles is reduced. The ion etching machine includes a discharge chamber, a reaction chamber and an ion source baffle, wherein the ion source baffle is clamped on an inner wall of the discharge chamber; and plasma sequentially passes through the ion source baffle and an ion source grid assembly. In the ion etching machine, the ion source baffle is additionally provided, such that after plasma is shielded by the ion source baffle.