Patents by Inventor Zhiyu Lin

Zhiyu Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for growing gallium nitride based on graphene and magnetron sputtered aluminum nitride
    Patent number: 11031240
    Abstract: The present invention discloses a method for growing gallium nitride based on graphene and magnetron sputtered aluminum nitride, and a gallium nitride thin film. The method according to an embodiment comprises: spreading graphene over a substrate; magnetron sputtering an aluminum nitrite onto the graphene-coated substrate to obtain a substrate sputtered with aluminum nitrite; placing the substrate sputtered with aluminum nitride into a MOCVD reaction chamber and heat treating the substrate to obtain a heat treated substrate; growing an aluminum nitride transition layer on the heat treated substrate and a first and a second gallium nitride layer having different V-III ratios, respectively.
    Type: Grant
    Filed: September 28, 2016
    Date of Patent: June 8, 2021
    Assignee: Xidian University
    Inventors: Jincheng Zhang, Jing Ning, Dong Wang, Zhibin Chen, Zhiyu Lin, Yue Hao
  • METHOD FOR GROWING GALLIUM NITRIDE BASED ON GRAPHENE AND MAGNETRON SPUTTERED ALUMINIUM NITRIDE
    Publication number: 20190108999
    Abstract: The present invention discloses a method for growing gallium nitride based on graphene and magnetron sputtered aluminum nitride, and a gallium nitride thin film. The method according to an embodiment comprises: spreading graphene over a substrate; magnetron sputtering an aluminum nitrite onto the graphene-coated substrate to obtain a substrate sputtered with aluminum nitrite; placing the substrate sputtered with aluminum nitride into a MOCVD reaction chamber and heat treating the substrate to obtain a heat treated substrate; growing an aluminum nitride transition layer on the heat treated substrate and a first and a second gallium nitride layer having different V-III ratios, respectively.
    Type: Application
    Filed: September 28, 2016
    Publication date: April 11, 2019
    Applicant: XIDIAN UNIVERSITY
    Inventors: Jincheng Zhang, Jing Ning, Dong Wang, Zhibin Chen, Zhiyu Lin, Yue Hao