Patents by Inventor Zhiyuan DONG

Zhiyuan DONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9484468
    Abstract: The present invention provides a thin film transistor and a manufacturing method thereof, an array substrate, and a display apparatus. The thin film transistor of the present invention comprises a gate, a gate insulation layer, a semiconductor active region, and a source and a drain connected with the semiconductor active region, and further comprises a surface charge transfer layer in contact with the semiconductor active region, the surface charge transfer layer is located above or below the semiconductor active region, and is used for causing the semiconductor active region to generate a large number of holes or electrons therein without changing the lattice structure of the semiconductor active region. In the thin film transistor, charge transfer occurs between the semiconductor active region and the surface charge transfer layer so that the doped semiconductor active region is formed, thus the performance of the thin film transistor is significantly improved.
    Type: Grant
    Filed: July 15, 2014
    Date of Patent: November 1, 2016
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Yunqi Zhang, Sangsoo Park, Xunze Zhang, Liang Peng, Liumin Yu, Weihua Fang, Yanrui Shen, Liang Xiao, Daowu Huang, Zhiyuan Dong, Longlong Duan, Jian Wang
  • Publication number: 20160027931
    Abstract: The present invention provides a thin film transistor and a manufacturing method thereof, an array substrate, and a display apparatus. The thin film transistor of the present invention comprises a gate, a gate insulation layer, a semiconductor active region, and a source and a drain connected with the semiconductor active region, and further comprises a surface charge transfer layer in contact with the semiconductor active region, the surface charge transfer layer is located above or below the semiconductor active region, and is used for causing the semiconductor active region to generate a large number of holes or electrons therein without changing the lattice structure of the semiconductor active region. In the thin film transistor, charge transfer occurs between the semiconductor active region and the surface charge transfer layer so that the doped semiconductor active region is formed, thus the performance of the thin film transistor is significantly improved.
    Type: Application
    Filed: July 15, 2014
    Publication date: January 28, 2016
    Inventors: Yunqi ZHANG, Sangsoo PARK, Xunze ZHANG, Liang PENG, Liumin YU, Weihua FANG, Yanrui SHEN, Liang XIAO, Daowu HUANG, Zhiyuan DONG, Longlong DUAN, Jian WANG