Abstract: Disclosed is a fundus image quality evaluation method based on multi-source and multi-scale feature fusion, comprising following steps: S1, acquiring multi-source fundus images, labeling the multi-source fundus images with four evaluation dimensions of brightness, blur, contrast and overall image quality, and forming training samples with the fundus image and labeling labels; S2, constructing a fundus image quality evaluation network including a feature extraction module, a fusion module, an attention module and an evaluation module; S3, training the fundus image quality evaluation network by using training samples to obtain a fundus image quality evaluation model; and S4: inputting fundus images to be measured into the fundus image quality evaluation model, and outputting quality evaluation results through calculation. Also provided is a fundus image quality evaluation device based on above method.

Abstract: Disclosed is a fundus image quality evaluation method based on multi-source and multi-scale feature fusion, comprising following steps: S1, acquiring multi-source fundus images, labeling the multi-source fundus images with four evaluation dimensions of brightness, blur, contrast and overall image quality, and forming training samples with the fundus image and labeling labels; S2, constructing a fundus image quality evaluation network including a feature extraction module, a fusion module, an attention module and an evaluation module; S3, training the fundus image quality evaluation network by using training samples to obtain a fundus image quality evaluation model; and S4: inputting fundus images to be measured into the fundus image quality evaluation model, and outputting quality evaluation results through calculation. Also provided is a fundus image quality evaluation device based on above method.

Abstract: The present invention discloses a saw-toothed electrode and a method for enhancing the performance of a nanowire UV detector, and relates to the field of semiconductor technologies. The saw-toothed electrode includes two symmetrically arranged patterns; the pattern includes a rectangle and multiple isosceles trapeziums; lower bases of the isosceles trapeziums are connected to a same long side of the rectangle; opposite sides of the two patterns are sides on which multiple isosceles trapeziums are located; equal-length legs and the upper base of the isosceles trapezium are used to grow nanowires; and nanowires grown on upper bases of two isosceles trapeziums, symmetric to each other, on the opposite sides of the two patterns form bridges.

Abstract: The present disclosure discloses a video encryption method comprising: acquiring image frames continuously by using an image acquisition component, and storing the image frames into a frame buffer; acquiring a time encryption sequence, and using the time encryption sequence to obtain an address encryption sequence; and reading each of the image frames in the frame buffer according to the address encryption sequence to obtain an encrypted video when the frame buffer is full. The method continuously acquires the image frames and uses the time encryption sequence to obtain the address encryption sequence, and when the frame buffer is full, each of the image frames in the frame buffer is read according to the address encryption sequence to obtain an encrypted video. In addition, the present disclosure also provides a video encryption apparatus, an image capture device, and a computer readable storage medium, which also have the above-mentioned beneficial effects.

Abstract: The present disclosure discloses an image encryption method comprising: acquiring a row encryption sequence and a column encryption sequence, and acquiring, from a pixel array component of a sensor, pixel rows corresponding to the respective elements of the row encryption sequence; encrypting and sorting pixels in each of the pixel rows by using the column encryption sequence to obtain encrypted pixel rows corresponding to the respective pixel rows; and arranging the encrypted pixel rows according to a preset arrangement order to obtain an encrypted image. The method may perform encryption when generating an original image to obtain an encrypted image. In addition, the present disclosure also provides an image encryption apparatus, a sensor, and a computer readable storage medium, which also have the above-mentioned beneficial effects.

Abstract: The present invention relates to technical field of analog integrated circuit design. TDI function is better realized by CMOS image sensor and it improves scanning frequency of the CMOS-TDI image sensor and extends application range of TDI technique. To this end, the present invention proposes a technical solution of high scanning frequency CMOS-TDI image sensor. The pixels include a photodiode, an operational amplifier, integration capacitors C1 and C2 of the same capacitance, an offset voltage removing capacitor C3, and plural switches S1-S10. The anode of the photodiode is connected to a zero voltage ground wire, while the cathode thereof is connected to one end of the switch S9. The other end of the switch S9 is connected to a reference voltage Vref. The above pixels are cascaded and an output end of the last pixel is connected to a column-parallel ADC through a readout switch Read. The invention mainly applies to analog integration circuit design.

Abstract: The present invention discloses a saw-toothed electrode and a method for enhancing the performance of a nanowire UV detector, and relates to the field of semiconductor technologies. The saw-toothed electrode includes two symmetrically arranged patterns; the pattern includes a rectangle and multiple isosceles trapeziums; lower bases of the isosceles trapeziums are connected to a same long side of the rectangle; opposite sides of the two patterns are sides on which multiple isosceles trapeziums are located; equal-length legs and the upper base of the isosceles trapezium are used to grow nanowires; and nanowires grown on upper bases of two isosceles trapeziums, symmetric to each other, on the opposite sides of the two patterns form bridges.

Abstract: The present disclosure discloses a video encryption method comprising: acquiring image frames continuously by using an image acquisition component, and storing the image frames into a frame buffer; acquiring a time encryption sequence, and using the time encryption sequence to obtain an address encryption sequence; and reading each of the image frames in the frame buffer according to the address encryption sequence to obtain an encrypted video when the frame buffer is full. The method continuously acquires the image frames and uses the time encryption sequence to obtain the address encryption sequence, and when the frame buffer is full, each of the image frames in the frame buffer is read according to the address encryption sequence to obtain an encrypted video. In addition, the present disclosure also provides a video encryption apparatus, an image capture device, and a computer readable storage medium, which also have the above-mentioned beneficial effects.

Abstract: The present disclosure discloses an image encryption method comprising: acquiring a row encryption sequence and a column encryption sequence, and acquiring, from a pixel array component of a sensor, pixel rows corresponding to the respective elements of the row encryption sequence; encrypting and sorting pixels in each of the pixel rows by using the column encryption sequence to obtain encrypted pixel rows corresponding to the respective pixel rows; and arranging the encrypted pixel rows according to a preset arrangement order to obtain an encrypted image. The method may perform encryption when generating an original image to obtain an encrypted image. In addition, the present disclosure also provides an image encryption apparatus, a sensor, and a computer readable storage medium, which also have the above-mentioned beneficial effects.

Abstract: The present invention relates to a CMOS image sensor. The present invention provides a digital pixel sensor capable of maintaining consistency between two reference voltage changing rates. To this end, the invention proposes a technical solution in which a digital pixel exposure method by using multiple ramp voltage as reference voltage is provided.

Abstract: The present invention relates to technical field of analog integrated circuit design. TDI function is better realized by CMOS image sensor and it improves scanning frequency of the CMOS-TDI image sensor and extends application range of TDI technique. To this end, the present invention proposes a technical solution of a current accumulative pixel structure for CMOS-TDI image sensor which comprises a photodiode, four MOS transistors M1, M2, M3, M4, four switches S1, S2, S3, S4, and two capacitors C1, C2; the connection relationship thereof is denoted below: the anode of the photodiode D1 is connected to a ground wire, while the cathode thereof is connected to an input end; the drain and gate of the transistor M1 are both connected with the input end, while the source thereof is connected with a power source VDD. The current invention mainly finds its application in analog integration circuit design.

Abstract: The present invention relates to technical field of analog integrated circuit design. TDI function is better realized by CMOS image sensor and it improves scanning frequency of the CMOS-TDI image sensor and extends application range of TDI technique. To this end, the present invention proposes a technical solution of a current accumulative pixel structure for CMOS-TDI image sensor which comprises a photodiode, four MOS transistors M1, M2, M3, M4, four switches S1, S2, S3, S4, and two capacitors C1, C2; the connection relationship thereof is denoted below: the anode of the photodiode D1 is connected to a ground wire, while the cathode thereof is connected to an input end; the drain and gate of the transistor M1 are both connected with the input end, while the source thereof is connected with a power source VDD. The current invention mainly finds its application in analog integration circuit design.

Abstract: The present invention relates to technical field of analog integrated circuit design. TDI function is better realized by CMOS image sensor and it improves scanning frequency of the CMOS-TDI image sensor and extends application range of TDI technique. To this end, the present invention proposes a technical solution of high scanning frequency CMOS-TDI image sensor. The pixels include a photodiode, an operational amplifier, integration capacitors C1 and C2 of the same capacitance, an offset voltage removing capacitor C3, and plural switches S1-S10. The anode of the photodiode is connected to a zero voltage ground wire, while the cathode thereof is connected to one end of the switch S9. The other end of the switch S9 is connected to a reference voltage Vref. The above pixels are cascaded and an output end of the last pixel is connected to a column-parallel ADC through a readout switch Read. The invention mainly applies to analog integration circuit design.

Abstract: The present invention relates to a CMOS image sensor. The present invention provides a digital pixel sensor capable of maintaining consistency between two reference voltage changing rates. To this end, the invention proposes a technical solution in which a digital pixel exposure method by using multiple ramp voltage as reference voltage is provided.