Abstract: A communications apparatus includes a first radio module including at least a first baseband signal processing device and a first radio transceiver, a second radio module including at least a second baseband signal processing device and a second radio transceiver, and an RF front-end circuit, coupled to the first radio module and the second radio module and including a plurality of RF signal processing components. A portion of the RF signal processing components capable of processing the RF signals of both the first and second radio modules are coupled to both the first and second radio modules for being shared by the first and second radio modules, and the first and second radio modules are capable of establishing a dedicated wireless connection, simultaneously, via the RF front-end circuit.

Abstract: A communications apparatus includes a first radio module including at least a first baseband signal processing device and a first radio transceiver, a second radio module including at least a second baseband signal processing device and a second radio transceiver, and an RF front-end circuit, coupled to the first radio module and the second radio module and including a plurality of RF signal processing components. A portion of the RF signal processing components capable of processing the RF signals of both the first and second radio modules are coupled to both the first and second radio modules for being shared by the first and second radio modules, and the first and second radio modules are capable of establishing a dedicated wireless connection, simultaneously, via the RF front-end circuit.

Abstract: A bias circuit includes a transistor having a control gate, a first terminal and a second terminal coupled to a ground level, a first resistor coupled to the control gate, a first capacitor coupled between an input signal and the first resistor, a diode coupled between a connection point of the first capacitor and the first resistor, and the ground level, a second capacitor coupled between the control gate and the ground level, a second resistor coupled between the control gate and the ground level, a third resistor coupled between the control gate and a predetermined voltage, a fourth resistor coupled between the predetermined voltage and the first terminal, and a fifth resistor coupled between the first terminal and a bias signal. A current through the transistor corresponds to the input signal, and the bias signal is generated according to the current through the transistor.

Abstract: A bias circuit includes a transistor having a control gate, a first terminal and a second terminal coupled to a ground level, a first resistor coupled to the control gate, a first capacitor coupled between an input signal and the first resistor, a diode coupled between a connection point of the first capacitor and the first resistor, and the ground level, a second capacitor coupled between the control gate and the ground level, a second resistor coupled between the control gate and the ground level, a third resistor coupled between the control gate and a predetermined voltage, a fourth resistor coupled between the predetermined voltage and the first terminal, and a fifth resistor coupled between the first terminal and a bias signal. A current through the transistor corresponds to the input signal, and the bias signal is generated according to the current through the transistor.