Abstract: A method of consistency detection of a document and an abstract is proposed. The method includes determining a first sample and first annotation information, the first annotation information indicating that a first abstract and a first document included in the first sample are inconsistent, at least one of a plurality of text elements in the first abstract being labeled as inconsistent with the first document; generating a first adversarial sample by applying interference information to the first sample, the interference information being applied to the first sample and other text elements in the first abstract except for the at least one text element; and training, at least based on the first sample, the first adversarial sample, and the first annotation information, a consistency detection model according to a training objective. The obtained trained model can better detect and track a part of the abstract that are inconsistent with the document.

Abstract: Disclosed is a thin-film transistor. The thin-film transistor includes: a substrate; a first gate, a first gate insulation layer, a semiconductor layer, an etching stop layer, and the second gate stacked on a surface of the substrate, in which the semiconductor layer has a thickness of 200 nm-2000 nm; the etching stop layer includes a first via and a second via formed therein; and the first via and the second via are arranged to each correspond to the semiconductor layer; and a source and a drain respectively extending through the first via and the second via to connect to the semiconductor layer. The thin-film transistor has an increased ON-state current and switching speed.

Abstract: The disclosure is related to a thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor comprises a substrate, a first semiconductor layer, an etch stop layer and a second semiconductor layer stacked on a surface of the substrate, and a first via and a second via formed on the etch stop layer; a source and a drain formed separating from each other and the source and the drain overlapping two ends of the second semiconductor layer respectively, wherein the source connects the first semiconductor layer through the first via, and the drain connects the first semiconductor layer through the second via, a gate insulation layer formed on the source and the drain; and a gate formed on the gate insulation layer. The thin film transistor of the disclosure have a higher on-state current of the thin film transistor and a faster switching speed.

Abstract: The disclosure is related to a thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor comprises a substrate, a gate, a gate insulation layer, a first semiconductor layer, an etch stop layer and a second semiconductor layer sequentially stacked on a surface of the substrate, and a source and a drain formed separating from each other and the source and the drain overlapping two ends of the second semiconductor layer respectively. A first via and a second via are formed on the etch stop layer corresponding to the source and the drain respectively. The source connects the first semiconductor layer through the first via; the drain connects the first semiconductor layer through the second via. The thin film transistor of the disclosure can effectively increase the on-state current of the thin film transistor and have a faster switching speed.

Abstract: The disclosure is related to a thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor comprises a substrate, a gate, a gate insulation layer, a first semiconductor layer, an etch stop layer and a second semiconductor layer sequentially stacked on a surface of the substrate, and a source and a drain formed separating from each other and the source and the drain overlapping two ends of the second semiconductor layer respectively. A first via and a second via are formed on the etch stop layer corresponding to the source and the drain respectively. The source connects the first semiconductor layer through the first via; the drain connects the first semiconductor layer through the second via. The thin film transistor of the disclosure can effectively increase the on-state current of the thin film transistor and have a faster switching speed.

Abstract: The disclosure is related to a thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor comprises a substrate, a first semiconductor layer, an etch stop layer and a second semiconductor layer stacked on a surface of the substrate, and a first via and a second via formed on the etch stop layer; a source and a drain formed separating from each other and the source and the drain overlapping two ends of the second semiconductor layer respectively, wherein the source connects the first semiconductor layer through the first via, and the drain connects the first semiconductor layer through the second via, a gate insulation layer formed on the source and the drain; and a gate formed on the gate insulation layer. The thin film transistor of the disclosure have a higher on-state current of the thin film transistor and a faster switching speed.

Abstract: Disclosed is a thin-film transistor. The thin-film transistor includes: a substrate; a first gate, a first gate insulation layer, a semiconductor layer, an etching stop layer, and the second gate stacked on a surface of the substrate, in which the semiconductor layer has a thickness of 200 nm-2000 nm; the etching stop layer includes a first via and a second via formed therein; and the first via and the second via are arranged to each correspond to the semiconductor layer; and a source and a drain respectively extending through the first via and the second via to connect to the semiconductor layer. The thin-film transistor has an increased ON-state current and switching speed.