Abstract: Provided are a silicene quantum dots-containing siloxene thin film and a preparation method therefor, which belong to the field of fluorescent functional nanomaterials. A siloxene thin film embedded with silicene quantum dots is prepared by uniformly mixing CaSi2 with a decalcification organic solvent and a transition metal chloride catalyst in a proportion, performing acid washing, and then performing ultrasonic dispersion. The thickness of such siloxene thin film is less than 1 to 2.5 nm, the size of the silicene quantum dots is 2 to 5 nm. In addition, the siloxene thin film has strong fluorescence emission performance in a blue light region, has a pseudodirect band gap, and shows a good application prospect in the fields of photoelectricity and the like.

Abstract: The present disclosure provides a perovskite nanocrystal fluorescent material comprising a micro-porous template and/or a mesoporous template, a substrate, and a perovskite nanocrystal. A substrate is attached to an inner surface of the micro-porous template and/or the mesoporous template and the perovskite nanocrystal is grown on a surface of the substrate. A melting point of the substrate is higher than a melting point of the perovskite nanocrystal. The perovskite nanocrystal fluorescent material has a high luminescence rate and high luminescence stability. The present disclosure also discloses a method for preparing the perovskite nanocrystal fluorescent material. The preparation method does not require organic solvents, and the preparation process is more green and environmentally friendly. The melt crystallization method adopted has a simple and controllable process, which is suitable for large-scale preparation of the perovskite nanocrystal.

Abstract: Provided are a silicene quantum dots-containing siloxene thin film and a preparation method therefor, which belong to the field of fluorescent functional nanomaterials. A siloxene thin film embedded with silicene quantum dots is prepared by uniformly mixing CaSi2 with a decalcification organic solvent and a transition metal chloride catalyst in a proportion, performing acid washing, and then performing ultrasonic dispersion. The thickness of such siloxene thin film is less than 1 to 2.5 nm, the size of the silicene quantum dots is 2 to 5 nm. In addition, the siloxene thin film has strong fluorescence emission performance in a blue light region, has a pseudodirect band gap, and shows a good application prospect in the fields of photoelectricity and the like.

Abstract: The embodiments disclosed a method for preparing a p-type ZnO-based material, the method conducted in a metal organic chemical vapor deposition (MOCVD) system, including cleaning a surface of a substrate and placing the substrate in a growth chamber of the metal organic chemical vapor deposition system, vacuumizing the growth chamber to 10?3-10?4 Pa, heating the substrate to 200-700° C., introducing an organic Zn source, an organic Na source and oxygen, and depositing the p-type ZnO-based material on the substrate. Na-doping is capable of greatly improving hole concentration and p-type stability in the ZnO-based material, and use of Na-doping technology in combination with MOCVD equipment provides a p-type ZnO-based material having excellent crystal quality and electrical and optical qualities.

Abstract: The present invention provides a method for preparing a p-type ZnO-based material, which method is conducted in a metal organic chemical vapor deposition system, including: cleaning the surface of a substrate and placing it in a growth chamber of the metal organic chemical vapor deposition system, vacuumizing the growth chamber to 10?3˜10?4 Pa, heating the substrate to 200˜700, introducing an organic Zn source, an organic Na source and oxygen, and depositing a p-type ZnO-based material on the substrate. Na-doping is capable of greatly improving hole concentration and p-type stability in the ZnO-based material, and use of Na-doping technology in combination with an MOCVD equipment can prepare a p-type ZnO-based material having excellent crystal quality and electrical and optical performances. Adopting an organic substance such as cyclopentadienyl sodium as a metal organic source for Na-doping can realize industrial production of the Na-doped p-type ZnO-based material.