Abstract: This application provides techniques of generating interactive videos. The techniques comprise obtaining an original video, creating an interactive track for the original video to obtain an initial video, and adding an interactive component to the interactive track; and generating an interactive video by rendering at least one interactive video frame and other video frames of the initial video based on the interactive component. In this way, an interactive video with an interactive capability can be generated without additionally adding a data channel to implement an interaction function, thereby reducing processing load of a terminal and reducing resource consumption of the terminal.

Abstract: A first set of features associated with a neural network are parameterized. A decision tree is generated from the first set of features. One or more adjustments for the neural network are received at the decision tree. A second set of features associated with the adjustments at the decision tree are parameterized. The parameterized first and second set of features are combined into a plurality of parameters. From the plurality, an adjusted neural network is generated.

Abstract: The present application discloses a graphics processing method applicable to a player, including: performing data interaction between a graphics engine and the player to obtain playback data; and executing, by the graphics engine, a graphics processing operation on a next frame of the player based on the playback data and a preset logic. In the present application, a communication mechanism is set between the engine scene layer of the graphics engine and the player, such that the engine scene layer and the player interact with each other in terms of playback data of a video being played, so that the engine scene layer can efficiently obtain the playback data for graphics processing operations, which is applicable to a video playing service and ensures a video rendering effect.

Abstract: The present disclosure provides a sucking and air blowing structure, and a massaging device. The sucking and air blowing structure includes a driving device, provided with a piston, the piston is capable of linearly reciprocating under an action of the driving device; and a venting device, connected with the driving device, the venting device defines a cavity cooperated with the piston, the piston is capable of linearly reciprocating in the cavity, the venting device further defines a first air outlet communicated with the cavity; when the piston linearly reciprocates in the cavity, internal air pressure and external air pressure of the cavity are balanced through the first air outlet, to form a sucking and air blowing effect. Under the action of the driving device, the piston reciprocates in the cavity to suck and blow air to the body, so as to quickly stimulate the skin.

Abstract: A method for insulating an aluminum backboard of a photovoltaic module comprises the following steps: shearing the aluminum backboard such that the dimensions of the aluminum backboard are 4-5 mm smaller those of the glass; forming a square aperture at the position of the electrode lead of the aluminum backboard; insulating the square aperture by cushioning a small insulating material or wrapping the edges with an insulation film when arraying and laying the modules; laminating and trimming the superimposed module components; wrapping the trimmed laminated piece around the edge with the 0.5-1 mm insulation tape; finally, framing up the laminated piece by using a frame filled with silica gel, and installing the terminal box. The invention is convenient to operate and low in investment and has a wide application prospect.

Abstract: A method for insulating an aluminum backboard of a photovoltaic module comprises the following steps: shearing the aluminum backboard such that the dimensions of the aluminum backboard are 4-5 mm smaller those of the glass; forming a square aperture at the position of the electrode lead of the aluminum backboard; insulating the square aperture by cushioning a small insulating material or wrapping the edges with an insulation film when arraying and laying the modules; laminating and trimming the superimposed module components; wrapping the trimmed laminated piece around the edge with the 0.5-1 mm insulation tape; finally, framing up the laminated piece by using a frame filled with silica gel, and installing the terminal box. The invention is convenient to operate and low in investment and has a wide application prospect.

Abstract: Methods of preparing an extract of Prickly-ash peel, including pulverizing the peels of Chinese Prickly-ash berries to produce powdered Prickly-ash peel; extracting the powdered Prickly-ash peel using an organic solvent to yield an organic extract solution; and removing the organic solvent under reduced pressure to yield a residue that is an extract of Prickly-ash peel. The resulting Prickly-ash peel extracts include the active anti-aging ingredient gx-50, having the formula which may be dispersed in a liquid or semi-solid physiologically and cosmetically acceptable vehicles or carriers to form topical anti-aging cosmetics.

Abstract: Performance of field effect transistors and other channel dependent devices formed on a monocrystalline substrate is improved by carrying out a high temperature anneal in a nitrogen releasing atmosphere while the substrate is coated by a sacrificial oxide coating containing easily diffusible atoms that can form negatively charged ions and can diffuse deep into the substrate. In one embodiment, the easily diffusible atoms comprise at least 5% by atomic concentration of chlorine atoms in the sacrificial oxide coating and the nitrogen releasing atmosphere includes NO. The high temperature anneal is carried out for less than 10 hours at a temperature less than 1100° C.

Abstract: Performance of field effect transistors and other channel dependent devices formed on a monocrystalline substrate is improved by carrying out a high temperature anneal in a nitrogen releasing atmosphere while the substrate is coated by a sacrificial oxide coating containing easily diffusible atoms that can form negatively charged ions and can diffuse deep into the substrate. In one embodiment, the easily diffusible atoms comprise at least 5% by atomic concentration of chlorine atoms in the sacrificial oxide coating and the nitrogen releasing atmosphere includes NO. The high temperature anneal is carried out for less than 10 hours at a temperature less than 1100° C.

Abstract: Conventional fabrication of sidewall oxide around an ONO-type memory cell stack usually produces Bird's Beak because prior to the fabrication, there is an exposed sidewall of the ONO-type memory cell stack that exposes side parts of a plurality of material layers respectively composed of different materials. Certain materials in the stack such as silicon nitrides are more difficult to oxidize than other materials in the stack such polysilicon. As a result oxidation does not proceed uniformly along the multi-layered height of the sidewall. The present disclosure shows how radical-based fabrication of sidewall dielectric can help to reduce the Bird's Beak formation. More specifically, it is indicated that short-lived oxidizing agents (e.g.

Abstract: Performance of field effect transistors and other channel dependent devices formed on a monocrystalline substrate is improved by carrying out a high temperature anneal in a nitrogen releasing atmosphere while the substrate is coated by a sacrificial oxide coating containing easily diffusible atoms that can form negatively charged ions and can diffuse deep into the substrate. In one embodiment, the easily diffusible atoms comprise at least 5% by atomic concentration of chlorine atoms in the sacrificial oxide coating and the nitrogen releasing atmosphere includes NO. The high temperature anneal is carried out for less than 10 hours at a temperature less than 1100° C.

Abstract: After forming a stack of layers (130, 140, 310) for a transistor or a charge-trapping memory over an active area (110), and before etching isolation trenches (160) in the semiconductor substrate (120) with the stack as a mask, spacers (610) are formed on the stack's sidewalls. The trench etch may include a lateral component, so the top edges of the trenches may be laterally recessed to a position under the spacers or the stack. After the etch, the spacers are removed to facilitate filling the trenches with the dielectric (to eliminate voids at the recessed top edges of the trenches). Other embodiments are also provided.

Abstract: In a nonvolatile memory cell with charge trapping dielectric (150), the tunnel dielectric (140) includes chlorine adjacent to the charge trapping dielectric but no chlorine (or less chlorine) adjacent to the cell's channel region (120). The chlorine adjacent to the charge trapping dielectric serves to improve the programming and/or erase speed. The low chlorine concentration adjacent to the channel region prevents chlorine from degrading the data retention. Other features are also provided.

Abstract: After forming a stack of layers (130, 140, 310) for a transistor or a charge-trapping memory over an active area (110), and before etching isolation trenches (160) in the semiconductor substrate (120) with the stack as a mask, spacers (610) are formed on the stack's sidewalls. The trench etch may include a lateral component, so the top edges of the trenches may be laterally recessed to a position under the spacers or the stack. After the etch, the spacers are removed to facilitate filling the trenches with the dielectric (to eliminate voids at the recessed top edges of the trenches). Other embodiments are also provided.

Abstract: In a nonvolatile memory cell with charge trapping dielectric (150), the tunnel dielectric (140) includes chlorine adjacent to the charge trapping dielectric but no chlorine (or less chlorine) adjacent to the cell's channel region (120). The chlorine adjacent to the charge trapping dielectric serves to improve the programming and/or erase speed. The low chlorine concentration adjacent to the channel region prevents chlorine from degrading the data retention. Other features are also provided.

Abstract: Performance of field effect transistors and other channel dependent devices formed on a monocrystalline substrate is improved by carrying out a high temperature anneal in a nitrogen releasing atmosphere while the substrate is coated by a sacrificial oxide coating containing easily diffusible atoms that can form negatively charged ions and can diffuse deep into the substrate. In one embodiment, the easily diffusible atoms comprise at least 5% by atomic concentration of chlorine atoms in the sacrificial oxide coating and the nitrogen releasing atmosphere includes NO. The high temperature anneal is carried out for less than 10 hours at a temperature less than 1100° C.