Patents by Inventor Zhong Qiang
Zhong Qiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11631591Abstract: Methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications are provided. For example, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.Type: GrantFiled: August 23, 2021Date of Patent: April 18, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Bhargav S. Citla, Jethro Tannos, Jingyi Li, Douglas A. Buchberger, Jr., Zhong Qiang Hua, Srinivas D. Nemani, Ellie Y. Yieh
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Patent number: 11289312Abstract: Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments a process kit configured for use in a process chamber for processing a substrate includes a shield having a cylindrical body having an upper portion and a lower portion; an adapter section configured to be supported on walls of the process chamber and having a resting surface to support the shield; and a heater coupled to the adapter section and configured to be electrically coupled to at least one power source of the processes chamber to heat the shield.Type: GrantFiled: June 12, 2019Date of Patent: March 29, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Adolph M. Allen, Vanessa Faune, Zhong Qiang Hua, Kirankumar Neelasandra Savandaiah, Anantha K. Subramani, Philip A. Kraus, Tza-Jing Gung, Lei Zhou, Halbert Chong, Vaibhav Soni, Kishor Kalathiparambil
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Publication number: 20210384040Abstract: Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.Type: ApplicationFiled: August 23, 2021Publication date: December 9, 2021Inventors: Bhargav S. CITLA, Jethro TANNOS, Jingyi LI, Douglas A. BUCHBERGER, JR., Zhong Qiang HUA, Srinivas D. NEMANI, Ellie Y. YIEH
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Patent number: 11114306Abstract: Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.Type: GrantFiled: September 17, 2018Date of Patent: September 7, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Bhargav Citla, Jethro Tannos, Jingyi Li, Douglas A. Buchberger, Jr., Zhong Qiang Hua, Srinivas D. Nemani, Ellie Y. Yieh
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Patent number: 11049701Abstract: Apparatus and methods for reducing and eliminating accumulation of excessive charged particles from substrate processing systems are provided herein. In some embodiments a process kit for a substrate process chamber includes: a cover ring having a body and a lip extending radially inward from the body, wherein the body has a bottom, a first wall, and a second wall, and wherein a first channel is formed between the second wall and the lip; a grounded shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first channel of the cover ring; and a bias power receiver coupled to the body and extending through an opening in the grounded shield.Type: GrantFiled: November 27, 2017Date of Patent: June 29, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Adolph Miller Allen, William Johanson, Viachslav Babayan, Zhong Qiang Hua, Carl R. Johnson, Vanessa Faune, Jingjing Liu, Vaibhav Soni, Kirankumar Savandaiah, Sundarapandian Ramalinga Vijayalaks Reddy
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Patent number: 10969450Abstract: In a method, apparatus and storage medium for filling a k-space trajectory in magnetic resonance (MR) imaging, a blank window, following an RF excitation pulse, is set in an arbitrary spatial encoding direction, and a first MR signal is acquired in this blank window, to obtain the phase of the first MR signal. A gradient field is activated outside the blank window and a second MR signal is acquired to obtain the phase of the second MR signal. This first and second MR signals are entered into k-space along first k-space and second k-space trajectories that are respectively based on the phase of the first MR signal and the phase of the second MR signal. A calibrated k-space trajectory in the spatial encoding direction is determined based on the first and second k-space trajectories.Type: GrantFiled: April 24, 2019Date of Patent: April 6, 2021Assignee: Siemens Healthcare GmbHInventors: Zhong Qiang Shi, De He Weng
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Publication number: 20200395198Abstract: Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments a process kit configured for use in a process chamber for processing a substrate includes a shield having a cylindrical body having an upper portion and a lower portion; an adapter section configured to be supported on walls of the process chamber and having a resting surface to support the shield; and a heater coupled to the adapter section and configured to be electrically coupled to at least one power source of the processes chamber to heat the shield.Type: ApplicationFiled: June 12, 2019Publication date: December 17, 2020Inventors: ADOLPH M. ALLEN, VANESSA FAUNE, ZHONG QIANG HUA, KIRANKUMAR NEELASANDRA SAVANDAIAH, ANANTHA K. SUBRAMANI, PHILIP A. KRAUS, TZA-JING GUNG, LEI ZHOU, HALBERT CHONG, VAIBHAV SONI, KISHOR KALATHIPARAMBIL
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Patent number: 10858727Abstract: A deposited amorphous carbon film includes at least 95% carbon. A percentage of sp3 carbon-carbon bonds present in the amorphous carbon film exceeds 30%, and a hydrogen content of the amorphous carbon film is less than 5%. A process of depositing amorphous carbon on a workpiece includes positioning the workpiece within a process chamber and positioning a magnetron assembly adjacent to the process chamber. The magnetron assembly projects a magnetic field into the process chamber. The method further includes providing a carbon target such that the magnetic field extends through the carbon target toward the workpiece. The method further includes providing a source gas to the process chamber, and providing pulses of DC power to a plasma formed from the source gas within the process chamber. The pulses of DC power are supplied in pulses of 40 microseconds or less, that repeat at a frequency of at least 4 kHz.Type: GrantFiled: May 19, 2017Date of Patent: December 8, 2020Assignee: Applied Materials, Inc.Inventors: Jingjing Liu, Zhong Qiang Hua, Adolph Miller Allen, Michael W. Stowell, Srinivas D. Nemani, Chentsau Ying, Bhargav Citla, Viachslav Babayan, Andrej Halabica
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Patent number: 10858735Abstract: Alignment systems employing actuators provide relative displacement between lid assemblies of process chambers and substrates, and related methods are disclosed. A process chamber includes chamber walls defining a process volume in which a substrate may be placed and the walls support a lid assembly of the process chamber. The lid assembly contains at least one of an energy source and a process gas dispenser. Moreover, an alignment system may include at least one each of a bracket, an interface member, and an actuator. By attaching the bracket to the chamber wall and securing the interface member to the lid assembly, the actuator may communicate with the bracket and the interface member to provide relative displacement between the chamber wall and the lid assembly. In this manner, the lid assembly may be positioned relative to the substrate to improve process uniformity across the substrate within the process chamber.Type: GrantFiled: September 5, 2019Date of Patent: December 8, 2020Assignee: Applied Materials, Inc.Inventors: Danny D. Wang, Jason Michael Lamb, Jun Tae Choi, Rupankar Choudhury, Zhong Qiang Hua, Juan Carlos Rocha-Alvarez
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Patent number: 10811257Abstract: A method may include depositing a carbon layer on a substrate using physical vapor deposition, wherein the carbon layer exhibits compressive stress, and is characterized by a first stress value; and directing a dose of low-mass species into the carbon layer, wherein, after the directing, the carbon layer exhibits a second stress value, less compressive than the first stress value.Type: GrantFiled: June 4, 2018Date of Patent: October 20, 2020Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Rajesh Prasad, Tzu-Yu Liu, Kyu-Ha Shim, Tom Ho Wing Yu, Zhong Qiang Hua, Adolph Miller Allen, Viabhav Soni, Ravi Rajagopalan, Nobuyuki Sasaki
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Publication number: 20200090946Abstract: Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.Type: ApplicationFiled: September 17, 2018Publication date: March 19, 2020Inventors: Bhargav S. CITLA, Jethro TANNOS, Jingyi LI, Douglas A. BUCHBERGER, JR., Zhong Qiang HUA, Srinivas D. NEMANI, Ellie Y. YIEH
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Patent number: 10570506Abstract: Embodiments of the present disclosure generally describe methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a high power impulse magnetron sputtering (HiPIMS) process, and in particular, biasing of the substrate during the deposition process and flowing a nitrogen source gas and/or a hydrogen source gas into the processing chamber in addition to an inert gas to improve the morphology and film stress of the deposited amorphous carbon layer.Type: GrantFiled: November 22, 2017Date of Patent: February 25, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Bhargav Citla, Jingjing Liu, Zhong Qiang Hua, Chentsau Ying, Srinivas D. Nemani, Ellie Y. Yieh
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Patent number: 10566177Abstract: Embodiments presented herein relate to a pulse control system for a substrate processing system. The pulse control system includes a power source, a system controller, and a pulse shape controller. The pulse shape controller is coupled to the power source and in communication with the system controller. The pulse shape controller includes a first switch assembly and a second switch assembly. The first switch assembly includes a first switch having a first end and a second end. The first switch is configurable between an open state and a closed state. The second switch assembly includes a second switch having a first end and a second end. The first switch is in the closed state and the second switch is in the open state. The first switch in the closed state is configured to allow a pulse supplied by the power source to transfer through the pulse shape controller.Type: GrantFiled: November 11, 2016Date of Patent: February 18, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Michael Stowell, Viachslav Babayan, Jingjing Liu, Zhong Qiang Hua
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Publication number: 20190390334Abstract: Alignment systems employing actuators provide relative displacement between lid assemblies of process chambers and substrates, and related methods are disclosed. A process chamber includes chamber walls defining a process volume in which a substrate may be placed and the walls support a lid assembly of the process chamber. The lid assembly contains at least one of an energy source and a process gas dispenser. Moreover, an alignment system may include at least one each of a bracket, an interface member, and an actuator. By attaching the bracket to the chamber wall and securing the interface member to the lid assembly, the actuator may communicate with the bracket and the interface member to provide relative displacement between the chamber wall and the lid assembly. In this manner, the lid assembly may be positioned relative to the substrate to improve process uniformity across the substrate within the process chamber.Type: ApplicationFiled: September 5, 2019Publication date: December 26, 2019Inventors: Danny D. WANG, Jason Michael LAMB, Jun Tae CHOI, Rupankar CHOUDHURY, Zhong Qiang HUA, Juan Carlos ROCHA-ALVAREZ
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Publication number: 20190324103Abstract: In a method, apparatus and storage medium for filling a k-space trajectory in magnetic resonance (MR) imaging, a blank window, following an RF excitation pulse, is set in an arbitrary spatial encoding direction, and a first MR signal is acquired in this blank window, to obtain the phase of the first MR signal. A gradient field is activated outside the blank window and a second MR signal is acquired to obtain the phase of the second MR signal. This first and second MR signals are entered into k-space along first k-space and second k-space trajectories that are respectively based on the phase of the first MR signal and the phase of the second MR signal. A calibrated k-space trajectory in the spatial encoding direction is determined based on the first and second k-space trajectories.Type: ApplicationFiled: April 24, 2019Publication date: October 24, 2019Applicant: Siemens Healthcare GmbHInventors: Zhong Qiang Shi, De He Weng
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Patent number: 10435786Abstract: Alignment systems employing actuators provide relative displacement between lid assemblies of process chambers and substrates, and related methods are disclosed. A process chamber includes chamber walls defining a process volume in which a substrate may be placed and the walls support a lid assembly of the process chamber. The lid assembly contains at least one of an energy source and a process gas dispenser. Moreover, an alignment system may include at least one each of a bracket, an interface member, and an actuator. By attaching the bracket to the chamber wall and securing the interface member to the lid assembly, the actuator may communicate with the bracket and the interface member to provide relative displacement between the chamber wall and the lid assembly. In this manner, the lid assembly may be positioned relative to the substrate to improve process uniformity across the substrate within the process chamber.Type: GrantFiled: October 23, 2014Date of Patent: October 8, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Danny D. Wang, Jun Tae Choi, Rupankar Choudhury, Zhong Qiang Hua, Juan Carlos Rocha-Alvarez, Jason Michael Lamb
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Publication number: 20190304783Abstract: A method may include depositing a carbon layer on a substrate using physical vapor deposition, wherein the carbon layer exhibits compressive stress, and is characterized by a first stress value; and directing a dose of low-mass species into the carbon layer, wherein, after the directing, the carbon layer exhibits a second stress value, less compressive than the first stress value.Type: ApplicationFiled: June 4, 2018Publication date: October 3, 2019Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Rajesh Prasad, Tzu-Yu Liu, Kyu-HA Shim, Tom Ho Wing Yu, Zhong Qiang Hua, Adolph Miller Allen, Viabhav Soni, Ravi Rajagopalan, Nobuyuki Sasaki
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Patent number: 10284594Abstract: A method for processing network traffic data includes receiving a packet, and determining whether the packet is a previously dropped packet that is being retransmitted. A method for processing network traffic content includes receiving a plurality of headers, the plurality of headers having respective first field values, and determining whether the first field values of the respective headers form a first prescribed pattern. A method for processing network traffic content includes receiving a plurality of packets, and determining an existence of a flooding attack without tracking each of the plurality of packets with a SYN bit.Type: GrantFiled: March 10, 2017Date of Patent: May 7, 2019Assignee: Fortinet, Inc.Inventors: Shaohong Wei, Gang Duan, Zhong Qiang Chen, Bing Xie
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Publication number: 20190127842Abstract: An apparatus and method of forming a dielectric film layer using a physical vapor deposition process include delivering a sputter gas to a substrate positioned in a processing region of a process chamber, the process chamber having a dielectric-containing sputter target, delivering an energy pulse to the sputter gas to create a sputtering plasma, the sputtering plasma being formed by energy pulses having an average voltage between about 800 volts and about 2000 volts and an average current between about 50 amps and about 300 amps at a frequency which is less than 50 kHz and greater than 5 kHz and directing the sputtering plasma toward the dielectric-containing sputter target to form an ionized species comprising dielectric material sputtered from the dielectric-containing sputter target, the ionized species forming a dielectric-containing film on the substrate.Type: ApplicationFiled: October 30, 2017Publication date: May 2, 2019Inventors: Viachslav BABAYAN, Adolph Miller ALLEN, Bhargav CITLA, Ronald D. DEDORE, Vanessa FAUNE, Zhong Qiang HUA, Vaibhav SONI, Menglu WU
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Patent number: 10258158Abstract: The present invention discloses a dual motor lift chair for the elderly, which comprises a base, a seat lift, a back flexing mechanism and a leg flexing mechanism. The seat lift is arranged on the base, and the back flexing mechanism and the leg flexing mechanism are arranged on the seat lift. The present invention has a reasonable structure. When in the standing assistance configuration, the overall height of the lift chair increases, and the lift chair inclines forward at a certain angle, so that the center of gravity of the elderly rises and moves forward. Hence, an effective result of standing assistance is achieved, and the experience effect of the standing assistance is ensured. Furthermore, by setting the leg flexing mechanism and the back flexing mechanism, the flex of the body may be adjusted, and hence the comfortability of the chair is improved.Type: GrantFiled: August 20, 2017Date of Patent: April 16, 2019Assignee: Haining Meihui Machinery LLCInventors: Zhong Qiang Fei, Xi Qi Sun, Wei Zhong Chu, Shao Qiang Fei