Abstract: The present disclosure provides a method for forming a three-dimensional memory device. The method can comprise forming a film stack with a plurality of dielectric layer pairs on a substrate, forming a channel structure region in the film stack including a plurality of channel structures, and forming a first staircase structure in a first staircase region and a second staircase structure in a second staircase region. Each of the first staircase structure and the second staircase structure can include a plurality of division block structures arranged along a first direction. A first vertical offset defines a boundary between adjacent division block structures. Each division block structure includes a plurality of staircases arranged along a second direction that is different from the first direction. Each staircase includes a plurality of steps arranged along the first direction.

Abstract: In certain aspects, a method for forming a three-dimensional (3D) memory device is disclosed. A stack structure including interleaved first dielectric layers and second dielectric layers is formed. Channel structures extending through the first dielectric layers and the second dielectric layers in a first region of the stack structure are formed. All the second dielectric layers in the first region and parts of the second dielectric layers in a second region of the stack structure are replaced with conductive layers. Word line pick-up structures extending through the first dielectric layers and remainders of the second dielectric layers in the second region of the stack structure are formed at different depths, such that the word line pick-up structures are electrically connected to the conductive layers, respectively, in the second region of the stack structure.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes channel structures in a first region, word line pick-up structures in a dielectric portion of a second region, and word lines each extending in the first region and a conductive portion of the second region. The first region and the second region are arranged in a first direction. The dielectric portion and the conductive portion of the second region are arranged in a second direction perpendicular to the first direction. The word lines are discontinuous in the dielectric portion of the second region and are electrically connected to the word line pick-up structures, respectively.

Abstract: In a semiconductor device, a stack of alternating gate layers and insulating layers is formed. Channel structures are formed in an array region of the stack. A first staircase is formed at a first section of the stack. A second staircase is formed at a second section of the stack. A dummy staircase is formed at the first section and disposed between the first staircase and the second staircase. The dummy staircase includes dummy group stair steps descending in a second direction parallel to a plane defined by any one of the gate layers and the insulating layers, and dummy division stair steps descending in a third direction and a fourth direction parallel to the plane and perpendicular to the second direction. The third direction and the fourth direction are opposite to each other.

Abstract: A fault current limiter, including: two inductors, a direct current circuit breaker, a shunt resistor, a first fixed resistor, and metal oxide arresters. The two inductors include wound superconducting wires. The inductors have identical number of windings and identical structure. Magnetic fluxes of the inductors are forward coupled, and the inductors are connected in parallel to form a superconducting inductor structure. The direct current circuit breaker and the superconducting inductor structure are connected in series to form a series branch. The shunt resistor is connected in parallel to the series branch. The first fixed resistor is connected in parallel to the direct current circuit breaker. The metal oxide arresters are two in number, and are connected to two ends of the inductors in parallel.

Abstract: A fault current limiter, including: an inductor, a direct current circuit breaker, a shunt resistor, and a first fixed resistor. The inductor includes wound superconducting wires. The direct current circuit breaker and the inductor are connected in series to form a series branch. The shunt resistor is connected in parallel to the series branch. The first fixed resistor is connected in parallel to the direct current circuit breaker.

Abstract: A fault current limiter, including: an inductor, a direct current circuit breaker, a shunt resistor, and a first fixed resistor. The inductor includes wound superconducting wires. The direct current circuit breaker and the inductor are connected in series to form a series branch. The shunt resistor is connected in parallel to the series branch. The first fixed resistor is connected in parallel to the direct current circuit breaker.

Abstract: A fault current limiter, including: two inductors, a direct current circuit breaker, a shunt resistor, a first fixed resistor, and metal oxide arresters. The two inductors include wound superconducting wires. The inductors have identical number of windings and identical structure. Magnetic fluxes of the inductors are forward coupled, and the inductors are connected in parallel to form a superconducting inductor structure. The direct current circuit breaker and the superconducting inductor structure are connected in series to form a series branch. The shunt resistor is connected in parallel to the series branch. The first fixed resistor is connected in parallel to the direct current circuit breaker. The metal oxide arresters are two in number, and are connected to two ends of the inductors in parallel.

Abstract: The present invention relates to a method for producing an organometallic catalyst and an organometallic catalyst when produced by the method. The method comprises the steps of combining a polycarboxylic acid or anhydride and a metal-oxide, metal-hydroxide or metal-salt with a solvent at a temperature and pressure at which the solvent exists as a supercritical or near-critical fluid. The polycarboxylic acid or anhydride is reacted with the metal-oxide, metal-hydroxide or metal-salt for sufficient time and under sufficient temperature and pressure to produce the organometallic catalyst. The present invention also relates to a process for making a poly(alkylene carbonate) in the presence of a catalytic amount of the organometallic catalyst produced by the method.

Abstract: The present invention relates to a method for producing an organometallic catalyst and an organometallic catalyst when produced by the method. The method comprises the steps of combining a polycarboxylic acid or anhydride and a metal-oxide, metal-hydroxide or metal-salt with a solvent at a temperature and pressure at which the solvent exists as a supercritical or near-critical fluid. The polycarboxylic acid or anhydride is reacted with the metal-oxide, metal-hydroxide or metal-salt for sufficient time and under sufficient temperature and pressure to produce the organometallic catalyst. The present invention also relates to a process for making a poly(alkylene carbonate) in the presence of a catalytic amount of the organometallic catalyst produced by the method.

Abstract: The present invention relates to a method for producing an organometallic catalyst and an organometallic catalyst when produced by the method. The method comprises the steps of combining a polycarboxylic acid or anhydride and a metal-oxide, metal-hydroxide or metal-salt with a solvent at a temperature and pressure at which the solvent exists as a supercritical or near-critical fluid. The polycarboxylic acid or anhydride is reacted with the metal-oxide, metal-hydroxide or metal-salt for sufficient time and under sufficient temperature and pressure to produce the organometallic catalyst. The present invention also relates to a process for making a poly(alkylene carbonate) in the presence of a catalytic amount of the organometallic catalyst produced by the method.

Abstract: The present invention relates to a method for producing an organometallic catalyst and an organometallic catalyst when produced by the method. The method comprises the steps of combining a polycarboxylic acid or anhydride and a metal-oxide, metal-hydroxide or metal-salt with a solvent at a temperature and pressure at which the solvent exists as a supercritical or near-critical fluid. The polycarboxylic acid or anhydride is reacted with the metal-oxide, metal-hydroxide or metal-salt for sufficient time and under sufficient temperature and pressure to produce the organometallic catalyst. The present invention also relates to a process for making a poly(alkylene carbonate) in the presence of a catalytic amount of the organometallic catalyst produced by the method.

Abstract: The present invention provides a system for generating hydrogen gas in an aqueous solution based electrolytic or galvanic cell wherein the cathode is made from aluminum or an aluminum alloy. In a preferred arrangement the cell is a galvanic cell and cathode is made from aluminum or aluminum alloy and the anode is made from magnesium or magnesium alloy.