Abstract: A method and system for optimizing the charging process of lithium-ion batteries by utilizing a determined parameter (e.g., Lyapunov Exponent) as a cell degradation (e.g., anode overpotential) indicator are disclosed. The system and method enable intelligent charging, which may involve integrating a controller that adjusts the charging current in real-time (or near real time or otherwise) based on the cell degradation indicator, calculated from probing the battery. This approach has various possible benefits to which the method and system may be tuned including extending battery lifespan, charge timing, and safety.

Abstract: In an example, a three-dimensional (3D) memory device includes a memory array structure including a first and a second memory array structures, a staircase structure between the first and a second memory array structures in a first lateral direction and including a first and a second staircase zones, and a bridge structure between the first and second staircase zones in a second lateral direction perpendicular to the first lateral direction. Each of the first and second staircase zones includes first and second sub-staircases arranged alternately. Each first sub-staircase includes ascending stairs at different depths. Each second sub-staircase includes descending stairs at different depths. At least one stair in each of the first and second sub-staircases is connected to at least one of the first and second memory array structures through the bridge structure.

Abstract: A sticking machine able to automatically remove films on either side of a sheet to be pasted to a workpiece includes a sheet supply component, a sheet selection component, a drive component, a first film-removing component, a second film-removing component, a carrier, and a transmission line. The sheet supply component stores sheets. The sheet selection component applies suction to the sheet. The first film-removing component tears off a first film, the second film-removing component tears off a second film on the reverse side. The transmission line carries the workpiece to the carrier. The sticking machine is fed by the sheet supply component, and after removal of the first film, the sheet selection component lays the sheet on the surface of the workpiece, then the second film-removing component tears off the second film, realizing automatic sticking of the sheet on the workpiece, improving the processing efficiency and accuracy.

Abstract: A semiconductor device includes a stack including gate layers and insulating layers alternately stacked along a first direction, channel structures located in an array region of the stack, a first staircase located at a first section in a connection region of the stack, the connection region and the array region arranged in a second direction perpendicular to the first direction, a second staircase located at a second section in the connection region of the stack, and an intermediate staircase located at the first section and disposed between the first staircase and the second staircase in the second direction. The intermediate staircase includes intermediate group stair steps ascending in the second direction. The intermediate staircase has a first sidewall and a second sidewall in the second direction. The second sidewall is closer to the second staircase than the first sidewall. The second sidewall is parallel to the first direction.

Abstract: According to one aspect of the present disclosure, a semiconductor device is provided. The semiconductor device may include a stack structure including conductor layers and dielectric layers stacked alternately along a first direction. The semiconductor device may include at least one semiconductor structure penetrating through the stack structure. The semiconductor structure may include a capacitor structure, a first transistor structure, and a second transistor structure extending in the stack structure along the first direction. The second transistor structure, the first transistor structure, and the capacitor structure in a same semiconductor structure may be arranged and connected sequentially along the first direction.

Abstract: A three-dimensional (3D) memory device includes interleaved conductive layers and dielectric layers. Edges of the conductive layers and dielectric layers define a plurality of stairs. The 3D memory device may also include a plurality of landing structures each disposed on a respective conductive layer at a respective stair. Each of the landing structures comprises a first layer of a first material and a second layer of a second material. The first layer is over the second layer. The second material is different from the first material.

Abstract: In a method for fabricating a semiconductor device, an initial stack of alternatingly sacrificial word line layers and insulating layers is formed over a substrate of the semiconductor device. A connection region, a first staircase region, and a second staircase region are patterned in the initial stack. The first staircase region is shaped in the initial stack to form a first staircase, and the second staircase region is shaped in the initial stack to form a second staircase. The first staircase is formed in a first block of the initial stack and extends between first array regions of the first block. The second staircase is formed in a second block of the initial stack and extends between second array regions of the second block. The connection region is formed in the initial stack between the first staircase and the second staircase.

Abstract: A fault current limiter, including: two inductors, a direct current circuit breaker, a shunt resistor, a first fixed resistor, and metal oxide arresters. The two inductors include wound superconducting wires. The inductors have identical number of windings and identical structure. Magnetic fluxes of the inductors are forward coupled, and the inductors are connected in parallel to form a superconducting inductor structure. The direct current circuit breaker and the superconducting inductor structure are connected in series to form a series branch. The shunt resistor is connected in parallel to the series branch. The first fixed resistor is connected in parallel to the direct current circuit breaker. The metal oxide arresters are two in number, and are connected to two ends of the inductors in parallel.

Abstract: A fault current limiter, including: an inductor, a direct current circuit breaker, a shunt resistor, and a first fixed resistor. The inductor includes wound superconducting wires. The direct current circuit breaker and the inductor are connected in series to form a series branch. The shunt resistor is connected in parallel to the series branch. The first fixed resistor is connected in parallel to the direct current circuit breaker.

Abstract: A fault current limiter, including: an inductor, a direct current circuit breaker, a shunt resistor, and a first fixed resistor. The inductor includes wound superconducting wires. The direct current circuit breaker and the inductor are connected in series to form a series branch. The shunt resistor is connected in parallel to the series branch. The first fixed resistor is connected in parallel to the direct current circuit breaker.

Abstract: A fault current limiter, including: two inductors, a direct current circuit breaker, a shunt resistor, a first fixed resistor, and metal oxide arresters. The two inductors include wound superconducting wires. The inductors have identical number of windings and identical structure. Magnetic fluxes of the inductors are forward coupled, and the inductors are connected in parallel to form a superconducting inductor structure. The direct current circuit breaker and the superconducting inductor structure are connected in series to form a series branch. The shunt resistor is connected in parallel to the series branch. The first fixed resistor is connected in parallel to the direct current circuit breaker. The metal oxide arresters are two in number, and are connected to two ends of the inductors in parallel.

Abstract: The present invention relates to a method for producing an organometallic catalyst and an organometallic catalyst when produced by the method. The method comprises the steps of combining a polycarboxylic acid or anhydride and a metal-oxide, metal-hydroxide or metal-salt with a solvent at a temperature and pressure at which the solvent exists as a supercritical or near-critical fluid. The polycarboxylic acid or anhydride is reacted with the metal-oxide, metal-hydroxide or metal-salt for sufficient time and under sufficient temperature and pressure to produce the organometallic catalyst. The present invention also relates to a process for making a poly(alkylene carbonate) in the presence of a catalytic amount of the organometallic catalyst produced by the method.

Abstract: The present invention relates to a method for producing an organometallic catalyst and an organometallic catalyst when produced by the method. The method comprises the steps of combining a polycarboxylic acid or anhydride and a metal-oxide, metal-hydroxide or metal-salt with a solvent at a temperature and pressure at which the solvent exists as a supercritical or near-critical fluid. The polycarboxylic acid or anhydride is reacted with the metal-oxide, metal-hydroxide or metal-salt for sufficient time and under sufficient temperature and pressure to produce the organometallic catalyst. The present invention also relates to a process for making a poly(alkylene carbonate) in the presence of a catalytic amount of the organometallic catalyst produced by the method.

Abstract: The present invention relates to a method for producing an organometallic catalyst and an organometallic catalyst when produced by the method. The method comprises the steps of combining a polycarboxylic acid or anhydride and a metal-oxide, metal-hydroxide or metal-salt with a solvent at a temperature and pressure at which the solvent exists as a supercritical or near-critical fluid. The polycarboxylic acid or anhydride is reacted with the metal-oxide, metal-hydroxide or metal-salt for sufficient time and under sufficient temperature and pressure to produce the organometallic catalyst. The present invention also relates to a process for making a poly(alkylene carbonate) in the presence of a catalytic amount of the organometallic catalyst produced by the method.

Abstract: The present invention relates to a method for producing an organometallic catalyst and an organometallic catalyst when produced by the method. The method comprises the steps of combining a polycarboxylic acid or anhydride and a metal-oxide, metal-hydroxide or metal-salt with a solvent at a temperature and pressure at which the solvent exists as a supercritical or near-critical fluid. The polycarboxylic acid or anhydride is reacted with the metal-oxide, metal-hydroxide or metal-salt for sufficient time and under sufficient temperature and pressure to produce the organometallic catalyst. The present invention also relates to a process for making a poly(alkylene carbonate) in the presence of a catalytic amount of the organometallic catalyst produced by the method.

Abstract: The present invention provides a system for generating hydrogen gas in an aqueous solution based electrolytic or galvanic cell wherein the cathode is made from aluminum or an aluminum alloy. In a preferred arrangement the cell is a galvanic cell and cathode is made from aluminum or aluminum alloy and the anode is made from magnesium or magnesium alloy.