Abstract: Provided is an apparatus for removing impurities from feed water comprising (A) a loading tank comprising a top, a bottom, and an interior, and further comprising (i) an inlet that conveys the feed water to a water distributor, (ii) a grid located above the water distributor, (iii) an outlet located at a level higher than the grid, (iv) an outlet at the bottom of the loading tank, (B) a regeneration tank comprising (i) a first inlet near the top of the regeneration tank, (ii) a second inlet at the top of the regeneration tank, (iii) an outlet at the bottom of the regeneration tank, (C) a pipe that conveys material from the bottom of the regeneration tank to the top of the loading tank, wherein said regeneration tank is located below the loading tank. Also provided is a method of removing impurities by using such an apparatus.

Abstract: A cover mechanism for an electronic device includes a base member and a cover combination. The base member defines a hole. The cover combination includes a cover member and at least one elastic member. One end of the at least one elastic member is attached to the cover member, another end of the at least one elastic member is attached to the base member. The cover member is slidably assembled into the base member, and the at least one elastic member provides an elastic force to allow the cover member to releasably cover the hole.

Abstract: A cover mechanism for an electronic device includes a base member and a cover combination. The base member defines a hole. The cover combination includes a cover member and at least one elastic member. One end of the at least one elastic member is attached to the cover member, another end of the at least one elastic member is attached to the base member. The cover member is slidably assembled into the base member, and the at least one elastic member provides an elastic force to allow the cover member to releasably cover the hole.

Abstract: According to the disclosure hypoxia-mediated adipogenic inhibition involves the repression of PPAR?2 expression and its activity is a common mechanism for adipogenic inhibition by a variety of stimuli. The present disclosure relates to methods and compositions for regulating adipogenesis. The disclosure provides compositions comprising one or more DEC1/Stra13 fragments of capable of inhibiting PPAR?2 promoter activity. These fragments, e.g. the basic helix loop helix domain or amino acids 1-141, have substantially the same PPAR?2 promoter repressing activity as the full length polypeptide. The present disclosure provides methods of inhibiting adipogenesis comprising contacting a cell with a fragment of DEC1/Stra13. The invention further relates to methods and compositions of inhibiting angiogenesis in a tumor comprising contacting a tumor or tumor cell with a DEC1/Stra13 agonist.

Abstract: According to the disclosure hypoxia-mediated adipogenic inhibition involves the repression of PPAR?2 expression and its activity is a common mechanism for adipogenic inhibition by a variety of stimuli. The present disclosure relates to methods and compositions for regulating adipogenesis. The disclosure provides compositions comprising one or more DEC1/Stra13 fragments of capable of inhibiting PPAR?2 promoter activity. These fragments, e.g. the basic helix loop helix domain or amino acids 1-141, have substantially the same PPAR?2 promoter repressing activity as the full length polypeptide. The present disclosure provides methods of inhibiting adipogenesis comprising contacting a cell with a fragment of DEC1/Stra13. The invention further relates to methods and compositions of inhibiting angiogenesis in a tumor comprising contacting a tumor or tumor cell with a DEC1/Stra13 agonist.

Abstract: A method for controlling and/or calibrating rapid thermal process systems is described. One or more wafers comprising a silicon semiconductor substrate having a refractory metal layer thereon are silicided in a RTP system at different temperatures. Sheet resistance uniformity of the wafer is measured thereby detecting silicidation phase transition temperature points at the highest uniformity points. The temperature points are used to calibrate or to reset the RTP system. A plurality of wafers comprising a silicon semiconductor substrate having a refractory metal layer thereon can be silicided in each of a plurality of rapid thermal process systems. Sheet resistance uniformity of each of the wafers is measured thereby detecting silicidation phase transition temperature points by highest sheet resistance uniformity for each of the RTP systems. The temperature points are used to match temperatures for each of the RTP systems.

Abstract: A method for controlling and/or calibrating rapid thermal process systems is described. One or more wafers comprising a silicon semiconductor substrate having a refractory metal layer thereon are silicided in a RTP system at different temperatures. Sheet resistance uniformity of the wafer is measured thereby detecting silicidation phase transition temperature points at the highest uniformity points. The temperature points are used to calibrate or to reset the RTP system. A plurality of wafers comprising a silicon semiconductor substrate having a refractory metal layer thereon can be silicided in each of a plurality of rapid thermal process systems. Sheet resistance uniformity of each of the wafers is measured thereby detecting silicidation phase transition temperature points by highest sheet resistance uniformity for each of the RTP systems. The temperature points are used to match temperatures for each of the RTP systems.