Abstract: A method for making an infrared light absorber is provided, and the method includes following steps: providing a first carbon nanotube array on a substrate; truncating the carbon nanotube array by irradiating a top surface of the carbon nanotube array by a laser beam in two directions, the top surface being away from the substrate, wherein the two directions being at an angle, the angle is in a range of 30 degrees to 90 degrees.

Abstract: An infrared detector is provided, and the infrared detector includes: a thermoelectric element; an infrared light absorber, located on and in contact with the thermoelectric element, and configured to absorb infrared light and convert infrared light into heat; an electrical signal detector, electrically connected to the thermoelectric element and configured to detect a change in electrical performance of the thermoelectric element; wherein the infrared light absorber includes a carbon nanotube array, the carbon nanotube array includes a plurality of carbon nanotubes, a height of the plurality of carbon nanotubes are substantially the same, and the plurality of carbon nanotubes are perpendicular to the thermoelectric element.

Abstract: A photoelectric detector, which includes a substrate, a MoS2 semiconductor layer, an electrical signal detector, a first electrode and a second electrode. Said MoS2 semiconductor layer is located on the substrate, with the first electrode and the second electrode spaced from each other and electrically connected to the MoS2 semiconductor layer respectively. The electrical signal detector is configured to detect changes in electrical properties of the MoS2 semiconductor layer, and the material of the MoS2 semiconductor layer is amorphous MoS2 sheet.

Abstract: A method for making an infrared light absorber is provided, and the method includes following steps: providing a carbon nanotube array on a substrate; truncating the carbon nanotube array by dry etching a top surface of the carbon nanotube array, the top surface being away from the substrate, the carbon nanotube array comprises a plurality of carbon nanotubes substantially parallel with each other, the plurality of carbon nanotubes in the carbon nanotube array are truncated to a height in a range of 100 micrometers to 300 micrometers.

Abstract: An infrared detector is provided, and the infrared detector includes: a thermoelectric element; an infrared light absorber, located on and in contact with the thermoelectric element, and configured to absorb infrared light and convert infrared light into heat; an electrical signal detector, electrically connected to the thermoelectric element and configured to detect a change in electrical performance of the thermoelectric element; wherein the infrared light absorber includes a carbon nanotube array, the carbon nanotube array includes a plurality of carbon nanotubes, a height of the plurality of carbon nanotubes are substantially the same, and the plurality of carbon nanotubes are perpendicular to the thermoelectric element.

Abstract: A method for making an infrared light absorber is provided, and the method includes following steps: providing a first carbon nanotube array on a substrate; truncating the carbon nanotube array by irradiating a top surface of the carbon nanotube array by a laser beam in two directions, the top surface being away from the substrate, wherein the two directions being at an angle, the angle is in a range of 30 degrees to 90 degrees.

Abstract: A method for making a graphene adhesive film includes the following steps: growing a graphene on a growth substrate, wherein the material of the growth substrate is copper; depositing an adhesive layer on a surface of the graphene away from the growth substrate, to form an adhesive/graphene/growth substrate composite structure; and removing the growth substrate from the adhesive/graphene/growth substrate composite structure with an etching solution, wherein the etching solution is a mixture of hydrogen peroxide, hydrochloric acid, and deionized water.