Patents by Inventor Zhongdang Wang

Zhongdang Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for preparing semiconductor substrate with insulating buried layer gettering process
    Patent number: 9299556
    Abstract: A method for preparing a semiconductor substrate with an buried insulating layer by a guttering process, includes the following steps: providing a device substrate and a supporting substrate; forming an insulating layer on a surface of the device substrate; performing a heating treatment on the device substrate, so as to form a denuded zone on the surface of the device substrate; bonding the device substrate having the insulating layer with the supporting substrate, such that the insulating layer is sandwiched between the device substrate and the supporting substrate; annealing and reinforcing a bonding interface, such that an adherence level of the bonding interface meets requirements in the following chamfering grinding, thinning and polishing processes; performing the chamfering grinding, thinning and polishing processes on the device substrate which is bonded.
    Type: Grant
    Filed: December 31, 2010
    Date of Patent: March 29, 2016
    Assignees: SHANGHAI SIMGUI TECHNOLOGY CO. LTD., SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
    Inventors: Xing Wei, Zhongdang Wang, Fei Ye, Gongbai Cao, Chenglu Lin, Miao Zhang, Xi Wang
  • METHOD FOR PREPARING SEMICONDUCTOR SUBSTRATE WITH INSULATING BURIED LAYER BY GETTERING PROCESS
    Publication number: 20130273714
    Abstract: A method for preparing a semiconductor substrate with an buried insulating layer by a guttering process, includes the following steps: providing a device substrate and a supporting substrate; forming an insulating layer on a surface of the device substrate; performing a heating treatment on the device substrate, so as to form a denuded zone on the surface of the device substrate; bonding the device substrate having the insulating layer with the supporting substrate, such that the insulating layer is sandwiched between the device substrate and the supporting substrate; annealing and reinforcing a bonding interface, such that an adherence level of the bonding interface meets requirements in the following chamfering grinding, thinning and polishing processes; performing the chamfering grinding, thinning and polishing processes on the device substrate which is bonded.
    Type: Application
    Filed: December 31, 2010
    Publication date: October 17, 2013
    Applicant: Shanghai Simgui Technology Co., Ltd.
    Inventors: Xing Wei, Zhongdang Wang, Fei Ye, Gongbai Cao, Chenglu Lin, Miao Zhang, Xi Wang