Patents by Inventor ZHONGFEI ZOU

ZHONGFEI ZOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12210252
    Abstract: An array substrate and a manufacturing method therefor, and a display panel are provided. The manufacturing method includes: forming a scan line and a gate on a substrate; forming a first insulating layer covering the scan line and the gate on the substrate; forming a metal oxide semiconductor layer above the first insulating layer, the metal oxide semiconductor layer including a source, a drain and an active layer; coating an upper surface of the metal oxide semiconductor layer with a photosensitive material layer; photoetching the photosensitive material layer from the back side of the substrate by using a first metal layer as a mask to form a channel protection layer; performing conductorization treatment on the metal oxide semiconductor layer to enable the source and the drain to be conductive; forming a data line above the first insulating layer; and forming a pixel electrode above the first insulating layer.
    Type: Grant
    Filed: December 17, 2021
    Date of Patent: January 28, 2025
    Assignees: INFOVISION OPTOELECTRONICS (KUNSHAN) CO., LTD., PEKING UNIVERSITY SHENZHEN GRADUATE SCHOOL
    Inventors: Shengdong Zhang, Xiaoliang Zhou, Congwei Liao, Qingping Lin, Huan Yang, Zhongfei Zou, Te-Chen Chung
  • Publication number: 20240248353
    Abstract: An array substrate and a manufacturing method therefor, and a display panel are provided. The manufacturing method includes: forming a scan line and a gate on a substrate; forming a first insulating layer covering the scan line and the gate on the substrate; forming a metal oxide semiconductor layer above the first insulating layer, the metal oxide semiconductor layer including a source, a drain and an active layer; coating an upper surface of the metal oxide semiconductor layer with a photosensitive material layer; photoetching the photosensitive material layer from the back side of the substrate by using a first metal layer as a mask to form a channel protection layer; performing conductorization treatment on the metal oxide semiconductor layer to enable the source and the drain to be conductive; forming a data line above the first insulating layer; and forming a pixel electrode above the first insulating layer.
    Type: Application
    Filed: December 17, 2021
    Publication date: July 25, 2024
    Inventors: SHENGDONG ZHANG, XIAOLIANG ZHOU, CONGWEI LIAO, QINGPING LIN, HUAN YANG, ZHONGFEI ZOU, TE-CHEN CHUNG