Abstract: A method of forming a semiconductor device includes forming vertical contact fingers in a substrate having side portions that are flexible. Contact fingers are formed near one or more edges of the flexible side portions of the substrate. After semiconductor dies are mounted to and electrically coupled to the substrate, the semiconductor device may be encapsulated by placing the device in a mold chase including upper and lower mold plates. The lower mold plate is sized smaller than the substrate so that the flexible side portions of the substrate including the contact fingers fold vertically upward to fit within the mold.

Abstract: A chip system includes a chip package body and an electromagnetic shielding enclosure. The chip package body is electrically connected to a circuit board through a first connection part. The chip package body includes a package substrate and at least one chip that are electrically connected. The electromagnetic shielding enclosure includes a conductive first shielding structure and a conductive second shielding structure. The first shielding structure is connected to the package substrate. A first cavity included in the first shielding structure is configured to accommodate at least one chip. A first end of the second shielding structure is connected to the circuit board or a solder pad of the circuit board; or a second end of the second shielding structure is connected to the first shielding structure to form a second cavity.

Abstract: A filter capable of automatically cutting off gas flow, including: a housing (1) with a cavity, a filter element (2) disposed in the cavity, a blocking mechanism disposed in the flow channel (13), and an unblocking member (23). The housing is provided with an inlet end (11) and an outlet end (12). The filter element (2) is provided with a first chamber (21). A second chamber (23) is formed between the filter element (2) and the housing (1), and a flow channel (13) is disposed between the first chamber (21) and the inlet end (11). The blocking mechanism has an unblocking state in which the blocking mechanism is cooperated with the unblocking member (23) to allow a gas flow to flow out of the flow channel (13), and a blocking state in which the blocking mechanism prevents the gas flow from flowing out of the flow channel (13).

Abstract: A packaging module includes a substrate layer disposed in a stacking manner, and a plurality of chip layers stacked on the substrate layer. The plurality of chip layers include a top chip layer, and the top chip layer is a chip layer furthest from the substrate layer in the plurality of chip layers. The top chip layer includes a first chip, a connection surface of the first chip faces the substrate layer, and the connection surface of the first chip is conductively connected to a chip of an adjacent chip layer by using a first conductor. The connection surface of the first chip faces the substrate layer, so that the first conductor connected to the first chip and another chip does not occupy additional space, to reduce the thickness of the packaging module, and facilitate miniaturization of the packaging module.

Abstract: The technology of this application relates to a packaging module and a packaging method therefor, and an electronic device. The packaging module includes at least two device groups and a shielding structure configured to shield the at least two device groups. The shielding structure includes a partition structure configured to perform electromagnetic isolation between every two adjacent device groups. The partition structure includes a plurality of conductive pillars and conductive adhesive, and a conductivity of the conductive pillar is greater than a conductivity of the conductive adhesive. The plurality of conductive pillars are arranged at intervals and are electrically connected to a ground layer of a substrate, the conductive adhesive fills a gap between any adjacent conductive pillars, and any adjacent conductive pillars are electrically connected by using the conductive adhesive.

Abstract: A switchable two-stage coalescence separation system, including a coalescer housing (1), a plurality of two-stage filter elements (2), and a particle detector (5). A lower portion and an upper portion of each of the two-stage filter elements (2) are located in a lower chamber (101) and an upper chamber (102) of the coalescer housing (1), respectively. Two gas inlet branch pipes are communicated with the lower chamber (101) and the upper chamber (102), respectively and are connected to a gas inlet main pipe (8) through a first multi-way valve (6). The particle detector (5) is disposed on the gas inlet main pipe (8). Two outlet branch pipes are communicated with the lower chamber (101) and the upper chamber (102), respectively and are connected to a gas outlet main pipe 13 through a second multi-way valve (7).

Abstract: A coalescing filter element (300) with double drainage layers, including an inner coalescing component (1) configured to captured a large amount of liquid in gas, and an outer coalescing component (2) configured to coalesce and filter a small amount of liquid remaining in the gas. The inner coalescing component (1) and the outer coalescing component (2) are cylindrical structures disposed in a vertical direction and opened at two ends. The outer coalescing component (2) is sleeved on an outer side of the inner coalescing component (1), and an annular drainage space (3) is formed between the inner coalescing component (1) and the outer coalescing component (2). A top end cap (4) is provided on top ends of the inner coalescing component (1) and the outer coalescing component (2). A bottom end cap (5) is provided on bottom ends of the inner coalescing component (1) and the outer coalescing component (2).

Abstract: This application relate to a semiconductor apparatus. The semiconductor apparatus includes: a first semiconductor layer; a second die; a thermally conductive layer, where the thermally conductive layer is stacked with the first semiconductor layer and the second die, is located between the first semiconductor layer and the second die, and a coefficient of thermal conductivity of the thermally conductive layer in a horizontal direction is greater than or equal to a coefficient of thermal conductivity in a vertical direction; and a first conductive pillar, where the first conductive pillar penetrates through the thermally conductive layer, the first conductive pillar is electrically insulated from the thermally conductive layer, an extension direction of the first conductive pillar is the vertical direction, and the coefficient of thermal conductivity of the thermally conductive layer in the horizontal direction is greater than a coefficient of thermal conductivity of the first semiconductor layer.

Abstract: A semiconductor device has vertical contact fingers formed in a substrate having side portions that are flexible. Contact fingers are formed near one or more edges of the flexible side portions of the substrate. After semiconductor dies are mounted to and electrically coupled to the substrate, the semiconductor device may be encapsulated by placing the device in a mold chase including upper and lower mold plates. The lower mold plate is sized smaller than the substrate so that the flexible side portions of the substrate including the contact fingers fold vertically upward to fit within the mold.

Abstract: A substrate semiconductor layer is attached to a carrier substrate through a sacrificial bonding material layer. A plurality of semiconductor dies included within continuous material layers are formed on a front side of the substrate semiconductor layer. Each of the continuous material layers continuously extends over areas of the plurality of semiconductor dies. A plurality of dicing channels is formed between neighboring pairs among the plurality of semiconductor dies by anisotropically etching portions of the continuous material layers located between neighboring pairs of semiconductor dies. The plurality of dicing channels extends to a top surface of the sacrificial bonding material layer. The sacrificial bonding material layer is removed selective to materials of surface portions of the plurality of semiconductor dies using an isotropic etch process. The plurality of semiconductor dies is singulated from one another upon removal of the sacrificial bonding material layer.

Abstract: A solid state drive is disclosed including a planar array of semiconductor devices for use in a datacenter, and a system for cooling the planar array of semiconductor devices. The semiconductor devices may be arranged in a grid pattern, spaced apart from each other so as to define rows and columns of flow pathways, or cooling tunnels, around and between the semiconductor devices.

Abstract: A substrate semiconductor layer is attached to a carrier substrate through a sacrificial bonding material layer. A plurality of semiconductor dies included within continuous material layers are formed on a front side of the substrate semiconductor layer. Each of the continuous material layers continuously extends over areas of the plurality of semiconductor dies. A plurality of dicing channels is formed between neighboring pairs among the plurality of semiconductor dies by anisotropically etching portions of the continuous material layers located between neighboring pairs of semiconductor dies. The plurality of dicing channels extends to a top surface of the sacrificial bonding material layer. The sacrificial bonding material layer is removed selective to materials of surface portions of the plurality of semiconductor dies using an isotropic etch process. The plurality of semiconductor dies is singulated from one another upon removal of the sacrificial bonding material layer.

Abstract: A solid state drive is disclosed including a planar array of semiconductor devices for use in a datacenter, and a system for cooling the planar array of semiconductor devices. The semiconductor devices may be arranged in a grid pattern, spaced apart from each other so as to define rows and columns of flow pathways, or cooling tunnels, around and between the semiconductor devices.

Abstract: A semiconductor device is disclosed including at least first and second vertically stacked and interconnected groups of semiconductor packages. The first and second groups of semiconductor packages may differ from each other in the number of packages and functionality.

Abstract: A semiconductor device is disclosed including at least first and second vertically stacked and interconnected groups of semiconductor packages. The first and second groups of semiconductor packages may differ from each other in the number of packages and functionality.

Abstract: A filter tube for high temperature gas-solid separation is provided that has a first cylinder and a second cylinder coaxially nested in the first cylinder with the first cylinder arranged so that an opening thereof faces upward, a first connection flange provided at a periphery of the opening of the first cylinder, and a circular through-hole provided at a bottom of the first cylinder. The second cylinder is nested in the first cylinder so that an opening of the second cylinder faces downward. The second cylinder has an end at an opening thereof that is hermetically connected to the circular through-hole of the first cylinder. The second cylinder has a bottom, and the bottom of the second cylinder and the opening of the first cylinder are at the same horizontal level. An annular gas passage is formed between the first cylinder and the second cylinder.

Abstract: The present invention relates to a pulse-jet cleaning device for filter with a self-oscillating nozzle, in which a tube sheet of the filter is provided with a filtration unit thereon, with a cleaning gas chamber above the tube sheet and a dust-containing gas chamber under the tube sheet; and the pulse-jet cleaning device includes an ejector and a back-flushing pipeline, with one end of the back-flushing pipeline connected to a back-flushing gas tank through a pulse back-flushing valve, the other end of the back-flushing pipeline being provided with a self-oscillating nozzle corresponding to the top portion of the ejector; and the self-oscillating nozzle includes a hollow cylindrical self-oscillating chamber, which has a gas inlet at an upper end connected to the back-flushing pipeline and a gas outlet at a lower end.

Abstract: A semiconductor device including alternating stepped semiconductor die stacks to allow for large numbers of semiconductor die to be provided within a semiconductor device using short wire bonds.

Abstract: A semiconductor device including alternating stepped semiconductor die stacks to allow for large numbers of semiconductor die to be provided within a semiconductor device using short wire bonds.

Abstract: A filter tube for high temperature gas-solid separation is provided that has a first cylinder and a second cylinder coaxially nested in the first cylinder with the first cylinder arranged so that an opening thereof faces upward, a first connection flange provided at a periphery of the opening of the first cylinder, and a circular through-hole provided at a bottom of the first cylinder. The second cylinder is nested in the first cylinder so that an opening of the second cylinder faces downward. The second cylinder has an end at an opening thereof that is hermetically connected to the circular through-hole of the first cylinder. The second cylinder has a bottom, and the bottom of the second cylinder and the opening of the first cylinder are at the same horizontal level. An annular gas passage is formed between the first cylinder and the second cylinder.