Patents by Inventor ZHONGPING LI

ZHONGPING LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PROCESS OF MANUFACTURING THE GATE OXIDE LAYER
    Publication number: 20150064930
    Abstract: A process of manufacturing the gate oxide layer, which uses the wet oxidation by deuterium to form gate oxide layer, wherein the nitriding treatment is applied to formed gate oxide layer by high temperature annealing process, the stable Si-D bonds is formed on surface of the gate oxide layer to reduce silicon dangling bonds, which reduce the defect of the gate oxide interface and lower the interface defect density of the gate oxide layer and the charge density effectively to avoid NBTI, is provided.
    Type: Application
    Filed: November 18, 2013
    Publication date: March 5, 2015
    Applicant: Shanghai Huali Microelectronics Corporation
    Inventors: ZHONGPING LI, ZHI WANG, JINMING SU, HSUSHENG CHANG