Abstract: The present invention provides a method for scalable fabrication of ultra-flat polycrystalline diamond membranes, the method comprising: (1) performing chemical vapor deposition on a growth substrate having diamond seeds thereon to grow a polycrystalline diamond membrane, wherein an exposed surface of the polycrystalline diamond membrane is a grown surface having a first roughness; and a surface bonded to the growth substrate is a buried surface; (2) bonding the grown surface to a transfer substrate using an adhesive; and (3) removing the growth substrate to expose the buried surface of the polycrystalline diamond membrane, wherein the buried surface has a second roughness after exposure, and the second roughness is less than the first roughness.

Abstract: The present invention provides a scalable method for achieving shape control of diamond micro-nanoparticles, comprising air oxidizing diamond micro-nanoparticles grown by chemical vapor deposition and/or diamond micro-nanoparticles grown by high pressure and high temperature. The present invention achieves the controllable morphology transformation of diamond micro-nanoparticles via air oxidation treatment. It has been demonstrated that a series of unique shapes, including “flower” shaped, “hollow” structured, “pyramid” patterned on the surface, and “boomerang” shaped, can be achieved by altering the air oxidation parameters, i.e., temperature and duration. The scalable production of these differently shaped diamond micro-nanoparticles represents a significant scientific breakthrough together with a high commercial value.

Abstract: A synaptic circuit performing spike-timing dependent plasticity STDP interposed between a pre-synaptic neuron and a post-synapse neuron includes a memristor having a variable resistance value configured to receive a first signal from the pre-synaptic neuron. The circuit has an intermediate unit connected in series with the memristor for receiving a second signal from the pre-synaptic neuron and provides an output signal to the post-synaptic neuron. The intermediate unit receives a retroaction signal generated from the post-synaptic neuron and the memristor modifies the resistance value based on a delay between two at least partially overlapped input pulses, a spike event of the first signal and a pulse of the retroaction signal, in order to induct a potentiated state STP or a depressed state STD at the memristor. An electronic neuromorphic system having synaptic circuits and a method of performing spike timing dependent plasticity STDP by a synaptic circuit are also provided.

Abstract: A synaptic circuit performing spike-timing dependent plasticity STDP interposed between a pre-synaptic neuron and a post-synapse neuron includes a memristor having a variable resistance value configured to receive a first signal from the pre-synaptic neuron. The circuit has an intermediate unit connected in series with the memristor for receiving a second signal from the pre-synaptic neuron and provides an output signal to the post-synaptic neuron. The intermediate unit receives a retroaction signal generated from the post-synaptic neuron and the memristor modifies the resistance value based on a delay between two at least partially overlapped input pulses, a spike event of the first signal and a pulse of the retroaction signal, in order to induct a potentiated state STP or a depressed state STD at the memristor. An electronic neuromorphic system having synaptic circuits and a method of performing spike timing dependent plasticity STDP by a synaptic circuit are also provided.

Abstract: An MPEG processor is provided. According to one aspect of the processor, multiple MPEG data streams for corresponding channels are individually stored in an off-chip memory. Corresponding data for a channel is then retrieved from the off-chip memory for processing. The retrieved data is then decoded. The decoded results and associated information are stored on the off-chip memory. Some or all of the associated information that can be used for decoding subsequent data is stored in an on-chip memory. When video images need to be displayed, the corresponding data that is needed for that purpose is then retrieved from the off-chip memory and provided to an analog encoder for encoding in a format that is compatible with an analog display device.

Abstract: A deinterleaver for performing high-speed multi-channel forward error correction using external SDRAM is provided. According to one exemplary aspect, the deinterleaver performs both read and write accesses to the SDRAM that are burst-oriented by hiding active and precharge cycles in order to achieve high data rate operations. The data bus length of the SDRAM is designed to be twice the deinterleaving symbol size thereby allowing bandwidth to be increased. The deinterleaver accesses data in the SDRAM as read blocks and write blocks. Each block includes a predetermined number of data words to be interleaved/deinterleaved. The ACTIVE command for one block is issued when a preceding block is being processed. Data in one read/write block has the same row address within the same bank of the SDRAM.

Abstract: An MPEG processor is provided. According to one aspect of the processor, multiple MPEG data streams for corresponding channels are individually stored in an off-chip memory. Corresponding data for a channel is then retrieved from the off-chip memory for processing. The retrieved data is then decoded. The decoded results and associated information are stored on the off-chip memory. Some or all of the associated information that can be used for decoding subsequent data is stored in an on-chip memory. When video images need to be displayed, the corresponding data that is needed for that purpose is then retrieved from the off-chip memory and provided to an analog encoder for encoding in a format that is compatible with an analog display device.