Abstract: The present disclosure provides a semiconductor device and its preparation method, wherein the preparation method includes providing a substrate, forming bit line units, capacitor contacts and a conductive layer on the substrate, patterning the conductive layer on the substrate by step-by-step etching, etching first grooves to form first conductive parts positioned above the bit line units, protecting sidewalls of the first grooves, and then etching second grooves to form second conductive parts covering sidewalls of the bit line units and third conductive parts covering the capacitor contacts.

Abstract: The present disclosure provides a semiconductor device and its preparation method, wherein the preparation method includes providing a substrate, forming bit line units, capacitor contacts and a conductive layer on the substrate, patterning the conductive layer on the substrate by step-by-step etching, etching first grooves to form first conductive parts positioned above the bit line units, protecting sidewalls of the first grooves, and then etching second grooves to form second conductive parts covering sidewalls of the bit line units and third conductive parts covering the capacitor contacts.

Abstract: The present invention relates to compounds of formula (1) or pharmaceutical acceptable salts, Formula (1) wherein R1, R2, R3, X, Y, Z, A, B, G1, m, and n are defined in the description. The present invention relates also to compositions containing said compounds which are useful for inhibiting kinases such as ALK and methods of treating diseases such as cancer.

Abstract: The present invention relates to compounds of formula (1) or pharmaceutical acceptable salts, wherein R1, X, Y, Z, A, B, G1, and n are defined in the description. The present invention relates also to compositions containing said compounds which are useful for inhibiting kinases such as ALK and methods of treating diseases such as cancer.