Abstract: A method of measuring cross-correlation or similarity between input features and filters of neural networks using an RRAM-crossbar architecture to carry out addition/subtraction-based neural networks for in-memory computing. The correlation calculations use L1 norm operations of AdderNet. The RCM structure of the RRAM-cross bar has storage and computing collocated, such that processing is done in the analog domain with low power, low latency and small area. In addition, the impact due to the nonidealities of RRAM device can be alleviated by the implicit ratio-based feature of the structure.

Abstract: Disclosed are a fixing member in a waterproof case and a fixing member, wherein the fixing member is configured to fix an electronic device in the waterproof case and comprises: a main body having a shape adapting to a shape of an inner cavity of the waterproof case and assembled in the inner cavity of the waterproof case; and a fixing part arranged on the main body, which detachably installs and fixes the electronic device.

Abstract: A photovoltaic device and methods for forming the same. In one embodiment, the photovoltaic device has a silicon substrate, and a film comprising a plurality of single wall carbon nanotubes disposed on the silicon substrate, wherein the plurality of single wall carbon nanotubes forms a plurality of heterojunctions with the silicon in the substrate.

Abstract: An apparatus and method for synthesizing nanostructures in a reactor having a reaction zone and a conductive susceptor positioned in the reaction zone. In one embodiment, the method has the steps of placing a semiconductor plate having a film of a catalyst in the reaction zone such that the semiconductor plate is supported by the conductive susceptor; transporting a gas mixture having a feedstock gas having hydrocarbon and a carrier gas into the reaction zone of the chamber; inductively heating the reaction zone; and regulating the heating so that the temperature of the conductive susceptor increases from a first temperature to a second temperature when the gas mixture is introduced into the cavity of the chamber to allow nanostructures to be grown from the interaction of the gas mixture with the film of a catalyst of the semiconductor plate.

Abstract: A photovoltaic device and methods for forming the same. In one embodiment, the photovoltaic device has a silicon substrate, and a film comprising a plurality of single wall carbon nanotubes disposed on the silicon substrate, wherein the plurality of single wall carbon nanotubes forms a plurality of heterojunctions with the silicon in the substrate.

Abstract: A process or method for treating cancer. In one embodiment, the method includes the steps of providing a plurality of metallic nanoparticles, wherein each of the plurality of metallic nanoparticles has a core formed with a first metallic material, and a shell formed with a non-metallic material containing carbon, and wherein the shell is formed to enclose the metallic core completely, introducing said metallic nanoparticles into a mammal such that said metallic nanoparticles selectively target at least one type of cancerous cell, and subsequently applying at least one radio frequency of electromagnetic waves to said mammal for a period of time effective to induce skin currents in the cores of the first metallic material of said metallic nanoparticles to cause heat generated locally around targeted at least one type of cancerous cell to kill said cancerous cell.

Abstract: An apparatus and method for synthesizing nanostructures in a reactor having a reaction zone and a conductive susceptor positioned in the reaction zone. In one embodiment, the method has the steps of placing a semiconductor plate having a film of a catalyst in the reaction zone such that the semiconductor plate is supported by the conductive susceptor; transporting a gas mixture having a feedstock gas having hydrocarbon and a carrier gas into the reaction zone of the chamber; inductively heating the reaction zone; and regulating the heating so that the temperature of the conductive susceptor increases from a first temperature to a second temperature when the gas mixture is introduced into the cavity of the chamber to allow nanostructures to be grown from the interaction of the gas mixture with the film of a catalyst of the semiconductor plate.

Abstract: A method of significantly improving carbon nanotube or carbon nanofiber yield from catalytic chemical vapor deposition of a carbon-containing gas comprising at least one hydrocarbon with the assistance of a proper amount of carbon dioxide (CO2). The catalytic particles preferably contain at least one metal from Group VIII (Fe, Co, Ni or the like) or/and one metal from Group VIb, including Mo, W, and Cr. The catalytic particles are preferably supported on oxide powders such as MgO, Al2O3, SiO, CaO, TiO, and ZrO, or a flat substrate such as, but not limited to, a Si wafer. The carbon nanotube or nanofiber product is preferably formed by exposing the catalyst to a mixture of a carbon-containing gas comprising at least one hydrocarbon with a proper amount of CO2 at a sufficiently high temperature. In an alternative embodiment, other oxygen-containing gases, such as alcohols, may be included in the mixture in addition to carbon dioxide.