Abstract: The invention discloses a semiconductor multi-station processing chamber. Each of the multiple station includes a downward concave accommodation defined by walls and receives a pedestal therein. The pedestal and the walls define a first gap. A showerhead plate mounted on an upper lid above the pedestal to define a processing region. A second gap for supply swiping gas is defined between the showerhead plate and the upper lid. An isolation member is liftable between the downward concave accommodation and the showerhead plate to optionally encircle a processing region defined by the pedestal and the showerhead plate or to retract back into the downward concave accommodation. Such that, when the isolation member surrounds and encircles the processing region, the station is able to be structurally isolated from its neighboring one station.

Abstract: This application relates to a double-sided deposition apparatus and method. The double-sided deposition apparatus includes: a chamber; an upper electrode disposed in the chamber and including a first showerhead, wherein the first showerhead is configured to provide a first reaction gas to an upper surface of a wafer, to form a first plasma region between the upper electrode and the upper surface of the wafer; and a lower electrode disposed in the chamber and including a second showerhead, wherein the second showerhead is configured to provide a second reaction gas to a lower surface of the wafer, to form a second plasma region between the lower electrode and the lower surface of the wafer, and wherein a period during which the first showerhead provides the first reaction gas at least partially overlaps a period during which the second showerhead provides the second reaction gas.

Abstract: The invention discloses a semiconductor multi-station processing chamber. Each of the multiple station includes a downward concave accommodation defined by walls and receives a pedestal therein. The pedestal and the walls define a first gap. A showerhead plate mounted on an upper lid above the pedestal to define a processing region. A second gap for supply swiping gas is defined between the showerhead plate and the upper lid. An isolation member is liftable between the downward concave accommodation and the showerhead plate to optionally encircle a processing region defined by the pedestal and the showerhead plate or to retract back into the downward concave accommodation. Such that, when the isolation member surrounds and encircles the processing region, the station is able to be structurally isolated from its neighboring one station.