Patents by Inventor Zhongxiu Yang

Zhongxiu Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Deep trench isolation structures with a substrate connection
    Patent number: 12136649
    Abstract: Semiconductor structures including a deep trench isolation structure and methods of forming a semiconductor structure including a deep trench isolation structure. The semiconductor structure includes a semiconductor substrate having a device region, and a deep trench isolation structure in the semiconductor substrate. The deep trench isolation structure further includes a first portion, a second portion adjacent to the first portion, and a conductor layer in the first portion and the second portion. The conductor layer in the first portion of the deep trench isolation structure surrounds the device region. The conductor layer in the second portion of the deep trench isolation structure defines an electrical connection to the semiconductor substrate.
    Type: Grant
    Filed: April 19, 2022
    Date of Patent: November 5, 2024
    Assignee: GlobalFoundries Singapore Pte. Ltd.
    Inventors: Jianbo Zhou, Shiang Yang Ong, Namchil Mun, Hung Chang Liao, Zhongxiu Yang
  • TRENCH ISOLATION STRUCTURES AND METHODS OF MAKING THEREOF
    Publication number: 20240014066
    Abstract: A trench isolation structure and method of making the same is provided. The trench isolation structure comprises a trench in a substrate, the trench having a bottom surface and sidewalls. A polycrystalline material is at least partially in the trench and an amorphous layer is over the polycrystalline material.
    Type: Application
    Filed: July 6, 2022
    Publication date: January 11, 2024
    Inventors: HUNG CHANG LIAO, SHIANG YANG ONG, JIANBO ZHOU, ZHONGXIU YANG, SIVAKAMI SUBRAMANIAN
  • DEEP TRENCH ISOLATION STRUCTURES WITH A SUBSTRATE CONNECTION
    Publication number: 20230335583
    Abstract: Semiconductor structures including a deep trench isolation structure and methods of forming a semiconductor structure including a deep trench isolation structure. The semiconductor structure includes a semiconductor substrate having a device region, and a deep trench isolation structure in the semiconductor substrate. The deep trench isolation structure further includes a first portion, a second portion adjacent to the first portion, and a conductor layer in the first portion and the second portion. The conductor layer in the first portion of the deep trench isolation structure surrounds the device region. The conductor layer in the second portion of the deep trench isolation structure defines an electrical connection to the semiconductor substrate.
    Type: Application
    Filed: April 19, 2022
    Publication date: October 19, 2023
    Inventors: Jianbo Zhou, Shiang Yang Ong, Namchil Mun, Hung Chang Liao, Zhongxiu Yang