Abstract: Disclosed is an LED package, an LED module and a method for manufacturing the LED package. The LED package includes a lead frame comprising an insulating substrate and a plurality of first pins to a plurality of fourth pins formed on the insulating substrate, a plurality of first bonding pads to a plurality of fourth bonding pads, and a plurality of first wires to a plurality of fourth wires; a plurality of pixel units, each of which includes a first LED element, a second LED element and a third LED element; and an encapsulating composition covering the lead frame and allowing light to transmit. The LED package includes the plurality of LED elements of pixel units and implements internal interconnection with additional wires, thereby reducing the number of bonding pads of the LED package, and thus the manufacturing cost is reduced and the product reliability is improved.

Abstract: Disclosed is an LED package, an LED module and a method for manufacturing the LED package. The LED package includes a lead frame comprising an insulating substrate and a plurality of first pins to a plurality of fourth pins formed on the insulating substrate, a plurality of first bonding pads to a plurality of fourth bonding pads, and a plurality of first wires to a plurality of fourth wires; a plurality of pixel units, each of which includes a first LED element, a second LED element and a third LED element; and an encapsulating composition covering the lead frame and allowing light to transmit. The LED package includes the plurality of LED elements of pixel units and implements internal interconnection with additional wires, thereby reducing the number of bonding pads of the LED package, and thus the manufacturing cost is reduced and the product reliability is improved.

Abstract: The present invention provides a semiconductor light emitting diode (LED) device and a formation method thereof. The device comprises: an active layer; a P-type semiconductor layer and an N-type semiconductor layer respectively located at two sides of the active layer; a positive electrode welding layer electrically connected to the P-type semiconductor layer; and a negative electrode welding layer electrically connected to the N-type semiconductor layer. The material of the positive electrode welding layer and/or the negative electrode welding layer is an aluminum alloy material. The present invention is capable of better meeting requirements of the LED device for the electrode welding layers, improving electro-migration resistance under large current, and improving the thermal stability of the device. Compared with a conventional aluminum material, the service life of the device is increased, and control over industrialization cost is facilitated.