Patents by Inventor Zhongyu Lin
Zhongyu Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10381343Abstract: An electrostatic protection device of an LDMOS silicon controlled structure comprises a P-type substrate (310), an N-well (320) and a P-well (330) on the substrate, a gate electrode (340) overlapping on the P-well (330) and extending to an edge of the N-well (320), a first N+ structure and a first P+ structure provided in the N-well (320), and a second N+ structure and a second P+ structure provided in the P-well (330), the first N+ structure being a drain electrode N+ structure (322), the first N+ structure being a drain electrode N+ structure (322), the first P+ structure being a drain electrode P+ structure (324), the second N+ structure being a source electrode N+ structure (332), the second P+ structure being a source P+ structure (334), and a distance from the drain electrode P+ structure (324) to the gate electrode (340) being greater than a distance from the drain electrode N+ structure (322) to the gate electrode (340).Type: GrantFiled: April 29, 2016Date of Patent: August 13, 2019Assignee: CSMC TECHNOLOGIES FAB2 CO., LTD.Inventors: Jun Sun, Zhongyu Lin, Guangyang Wang, Guipeng Sun
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Publication number: 20180122794Abstract: An electrostatic protection device of an LDMOS silicon controlled structure comprises a P-type substrate (310), an N-well (320) and a P-well (330) on the substrate, a gate electrode (340) overlapping on the P-well (330) and extending to an edge of the N-well (320), a first N+ structure and a first P+ structure provided in the N-well (320), and a second N+ structure and a second P+ structure provided in the P-well(330), the first N+ structure being a drain electrode N+ structure (322), the first N+ structure being a drain electrode N+ structure (322), the first P+ structure being a drain electrode P+ structure (324), the second N+ structure being a source electrode N+ structure (332), the second P+ structure being a source P+ structure (334), and a distance from the drain electrode P+ structure (324) to the gate electrode (340) being greater than a distance from the drain electrode N+ structure (322) to the gate electrode (340).Type: ApplicationFiled: April 29, 2016Publication date: May 3, 2018Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.Inventors: Jun SUN, Zhongyu LIN, Guangyang WANG, Guipeng SUN
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Patent number: 9780084Abstract: An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.Type: GrantFiled: February 28, 2016Date of Patent: October 3, 2017Assignee: CSMC TECHNOLOGIES FAB1 CO., LTD.Inventors: Yonghai Hu, Meng Dai, Zhongyu Lin, Guangyang Wang
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Publication number: 20160181237Abstract: An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.Type: ApplicationFiled: February 28, 2016Publication date: June 23, 2016Inventors: Yonghai Hu, Meng Dai, Zhongyu Lin, Guangyang Wang
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Patent number: 9343454Abstract: An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.Type: GrantFiled: April 27, 2013Date of Patent: May 17, 2016Assignee: CSMC TECHNOLOGIES FAB1 CO., LTD.Inventors: Yonghai Hu, Meng Dai, Zhongyu Lin, Guangyang Wang
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Patent number: 9202790Abstract: A semiconductor device for electrostatic discharge protection includes a substrate, a first well and a second well formed in the substrate. The first and second wells are formed side by side, meeting at an interface, and have a first conductivity type and a second conductivity type, respectively. A first heavily doped region and a second heavily-doped region are formed in the first well. A third heavily doped region and a fourth heavily-doped region are formed in the second well. The first, second, third, and fourth heavily-doped regions have the first, second, second, and first conductivity types, respectively. Positions of the first and second heavily-doped regions are staggered along a direction parallel to the interface.Type: GrantFiled: October 22, 2012Date of Patent: December 1, 2015Assignee: CSMC TECHNOLOGIES FAB1 CO., LTD.Inventors: Zhongyu Lin, Meng Dai, Yonghai Hu
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Publication number: 20150162286Abstract: A semiconductor device for electrostatic discharge protection includes a substrate, a first well and a second well formed in the substrate. The first and second wells are formed side by side, meeting at an interface, and have a first conductivity type and a second conductivity type, respectively. A first heavily doped region and a second heavily-doped region are formed in the first well. A third heavily doped region and a fourth heavily-doped region are formed in the second well. The first, second, third, and fourth heavily-doped regions have the first, second, second, and first conductivity types, respectively. Positions of the first and second heavily-doped regions are staggered along a direction parallel to the interface.Type: ApplicationFiled: October 22, 2012Publication date: June 11, 2015Inventors: Zhongyu Lin, Meng Dai, Yonghai Hu
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Patent number: 8890259Abstract: An SCR apparatus includes an SCR structure and a first N injection region. The SCR structure includes a P+ injection region, a P well, an N well and a first N+ injection region, the first N injection region is located under an anode terminal of the P+ injection region of the SCR structure. A method for adjusting a sustaining voltage therefor is provided as well.Type: GrantFiled: December 5, 2011Date of Patent: November 18, 2014Assignees: CSMC Technologies Fab1 Co., Ltd., CSMC Technologies FAB2 Co., Ltd.Inventors: Meng Dai, Zhongyu Lin
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Publication number: 20140138740Abstract: An electrostatic discharge protection structure includes: substrate of a first type of conductivity, well region of a second type of conductivity, substrate contact region in the substrate and of the first type of conductivity, well contact region in the well region and of the second type of conductivity, substrate counter-doped region between the substrate contact region and the well contact region and of the second type of conductivity, well counter-doped region between the substrate contact region and the well contact region and of the first type of conductivity, communication region at a lateral junction between the substrate and the well region, first isolation region between the substrate counter-doped region and the communication region, second isolation region between the well counter-doped region and the communication region, oxide layer having one end on the first isolation region and another end on the substrate, and field plate structure on the oxide layer.Type: ApplicationFiled: April 27, 2013Publication date: May 22, 2014Inventors: Yonghai Hu, Meng Dai, Zhongyu Lin, Guangyang Wang
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Publication number: 20130099278Abstract: An SCR apparatus includes an SCR structure and a first N injection region. The SCR structure includes a P+ injection region, a P well, an N well and a first N+ injection region, the first N injection region is located under an anode terminal of the P+ injection region of the SCR structure. A method for adjusting a sustaining voltage therefor is provided as well.Type: ApplicationFiled: December 5, 2011Publication date: April 25, 2013Inventors: Meng Dai, Zhongyu Lin
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Publication number: 20090190644Abstract: A method for quickly diagnosing inter-communication problem of digital subscriber line transceivers, which records the interactive messages between central office xDSL terminal unit (xTU-C) and remote xDSL terminal unit (xTU-R), amends specific message of said interactive messages, executes interactive test utilizing amended message, and analyzes the result of said test to confirm the reason of inter-communication problem. The embodiments also provide an apparatus for quickly diagnosing inter-communication problem of digital subscriber line transceivers. The embodiments efficiently resolve the inter-communication problem between xTU-C and xTU-R which are different xDSL transceivers, provide convenience to telecommunication service provider and telecommunication device maintenance personnel, and save the cost.Type: ApplicationFiled: March 30, 2009Publication date: July 30, 2009Inventors: Hao ZHANG, Binfeng WANG, Linzhi YAN, Liyuan SONG, Jian ZHANG, Zhongyu LIN, Jingfeng WANG
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Publication number: 20090059802Abstract: A device, system and method for diagnosing an interworking fault of x Digital Subscriber Line (xDSL) transceivers are disclosed. The xDSL transceivers in the system include an xTU-C and an xTU-R. The system further includes: a message collection module adapted to collect and save the interaction messages transmitted between the xTU-C and the xTU-R during the activation of an xDSL line; and a fault analysis module adapted to analyze the collected interaction messages to obtain the first diagnosis conclusion with respect to the interworking fault.Type: ApplicationFiled: November 11, 2008Publication date: March 5, 2009Inventors: Hao Zhang, Binfeng Wang, Linzhi Yan, Liyuan Song, Jian Zhang, Zhongyu Lin, Jingfeng Wang
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Patent number: D987760Type: GrantFiled: April 22, 2021Date of Patent: May 30, 2023Inventor: Zhongyu Lin
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Patent number: D1000566Type: GrantFiled: February 22, 2021Date of Patent: October 3, 2023Inventor: Zhongyu Lin