Patents by Inventor Zhou Yuchen

Zhou Yuchen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9236068
    Abstract: A hard bias (HB) structure for producing longitudinal bias to stabilize a free layer in an adjacent spin valve is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)x laminated layer. The (Co/Ni)x HB layer deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent process steps. After initialization, magnetization direction in the HB layer is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.
    Type: Grant
    Filed: October 8, 2013
    Date of Patent: January 12, 2016
    Assignee: Headway Technologies, Inc.
    Inventors: Zhang Kunliang, Li Min, Zhou Yuchen, Zheng Min
  • Patent number: 8734620
    Abstract: A method for producing a hard bias (HB) structure that stabilizes a free layer in an adjacent spin valve is disclosed. The HB structure includes a composite seed layer and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)x laminate. (Co/Ni)x deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent processing. After initialization, HB magnetization direction is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.
    Type: Grant
    Filed: October 8, 2013
    Date of Patent: May 27, 2014
    Assignee: Headway Technologies, Inc.
    Inventors: Zhang Kunliang, Li Min, Zhou Yuchen, Zheng Min
  • Publication number: 20140037989
    Abstract: A hard bias (HB) structure for producing longitudinal bias to stabilize a free layer in an adjacent spin valve is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)x laminated layer. The (Co/Ni)x HB layer deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent process steps. After initialization, magnetization direction in the HB layer is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.
    Type: Application
    Filed: October 8, 2013
    Publication date: February 6, 2014
    Applicant: HEADWAY TECHNOLOGIES, INC.
    Inventors: Zhang Kunliang, Li Min, Zhou Yuchen, Zheng Min
  • Publication number: 20140037836
    Abstract: A method for producing a hard bias (HB) structure that stabilizes a free layer in an adjacent spin valve is disclosed. The HB structure includes a composite seed layer and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)x laminate. (Co/Ni)x deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent processing. After initialization, HB magnetization direction is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.
    Type: Application
    Filed: October 8, 2013
    Publication date: February 6, 2014
    Applicant: HEADWAY TECHNOLOGIES, INC.
    Inventors: Zhang Kunliang, Li Min, Zhou Yuchen, Zheng Min