Patents by Inventor Zhouyang LU

Zhouyang LU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12347787
    Abstract: Three-dimensional (3D) NAND memory devices and methods are provided. A fabrication method includes forming a semiconductor layer over a substrate, forming an opening that extends partially through the semiconductor layer, depositing a first stack layer and a second stack layer that are alternately stacked over a sidewall of the opening and over the semiconductor layer, and filling the opening with a dielectric material to form an alignment mark.
    Type: Grant
    Filed: June 13, 2022
    Date of Patent: July 1, 2025
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Chuanhai Shan, Zhaosong Li, Zhouyang Lu, Jing Liu, Jing Gao
  • Publication number: 20230402394
    Abstract: Three-dimensional (3D) NAND memory devices and methods are provided. A fabrication method includes forming a semiconductor layer over a substrate, forming an opening that extends partially through the semiconductor layer, depositing a first stack layer and a second stack layer that are alternately stacked over a sidewall of the opening and over the semiconductor layer, and filling the opening with a dielectric material to form an alignment mark.
    Type: Application
    Filed: June 13, 2022
    Publication date: December 14, 2023
    Inventors: Chuanhai SHAN, Zhaosong LI, Zhouyang LU, Jing LIU, Jing GAO