Patents by Inventor Zhuang Hao

Zhuang Hao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12059251
    Abstract: A microdevice for monitoring a target analyte is provided. The microdevice can include a field effect transistor comprising a substrate, a gate electrode, and a microfluidic channel including graphene. The microfluidic channel can be formed between drain electrodes and source electrodes on the substrate. The microdevice can also include at least one aptamer functionalized on a surface of the graphene. The at least one aptamer can be adapted for binding to the target analyte. Binding of the target analyte to the at least one aptamer can alter the conductance of the graphene.
    Type: Grant
    Filed: March 5, 2020
    Date of Patent: August 13, 2024
    Assignee: THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
    Inventors: Qiao Lin, Yibo Zhu, Junyi Shang, Zhixing Zhang, Xuejun Wang, Jaeyoung Yang, Cheng Wang, Zhuang Hao
  • Publication number: 20240183331
    Abstract: A blade noise reduction device, comprising a plurality of sawtooth units. The plurality of sawtooth units are arranged in a first direction. Each sawtooth unit comprises secondary teeth and a primary tooth, which extend in a second direction, wherein at least one secondary tooth is distributed on each of two sides of the primary tooth, the tooth vertex angle of the secondary tooth being smaller than the tooth vertex angle of the primary tooth. The blade noise reduction device can remarkably improve the noise reduction effect. In addition, the present invention further relates to a blade having the blade noise reduction device, and a wind turbine generator set having the blade.
    Type: Application
    Filed: September 28, 2021
    Publication date: June 6, 2024
    Inventors: Xiong ZHAO, Shaohong JIA, Qiuge LIU, Zhuang HAO
  • Patent number: 11619602
    Abstract: The present disclosure provides a three-dimensional hydrogel-graphene-based biosensor and a preparation method thereof, belonging to the technical field of biosensors. The present disclosure provides a three-dimensional hydrogel-graphene-based biosensor, including a substrate, an electrode layer, a graphene film, and a three-dimensional hydrogel material layer that are stacked in sequence; where the three-dimensional hydrogel material layer is formed of a hydrogel material having a three-dimensional network structure; the hydrogel material is obtained by polymerization of raw materials including an acrylamide monomer and a modified probe molecule; and the modified probe molecule is a probe molecule modified with an acrylamide group. The three-dimensional hydrogel-graphene-based biosensor has a desirable stability and a high sensitivity.
    Type: Grant
    Filed: August 1, 2022
    Date of Patent: April 4, 2023
    Assignee: HARBIN INSTITUTE OF TECHNOLOGY
    Inventors: Yunlu Pan, Zhuang Hao, Xuezeng Zhao
  • Publication number: 20220404301
    Abstract: The present disclosure provides a three-dimensional hydrogel-graphene-based biosensor and a preparation method thereof, belonging to the technical field of biosensors. The present disclosure provides a three-dimensional hydrogel-graphene-based biosensor, including a substrate, an electrode layer, a graphene film, and a three-dimensional hydrogel material layer that are stacked in sequence; where the three-dimensional hydrogel material layer is formed of a hydrogel material having a three-dimensional network structure; the hydrogel material is obtained by polymerization of raw materials including an acrylamide monomer and a modified probe molecule; and the modified probe molecule is a probe molecule modified with an acrylamide group. The three-dimensional hydrogel-graphene-based biosensor has a desirable stability and a high sensitivity.
    Type: Application
    Filed: August 1, 2022
    Publication date: December 22, 2022
    Applicant: HARBIN INSTITUTE OF TECHNOLOGY
    Inventors: YUNLU PAN, ZHUANG HAO, XUEZENG ZHAO
  • Publication number: 20200196925
    Abstract: A microdevice for monitoring a target analyte is provided. The microdevice can include a field effect transistor comprising a substrate, a gate electrode, and a microfluidic channel including graphene. The microfluidic channel can be formed between drain electrodes and source electrodes on the substrate. The microdevice can also include at least one aptamer functionalized on a surface of the graphene. The at least one aptamer can be adapted for binding to the target analyte. Binding of the target analyte to the at least one aptamer can alter the conductance of the graphene.
    Type: Application
    Filed: March 5, 2020
    Publication date: June 25, 2020
    Applicants: THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK, DEPARTMENT OF ANATOMY AND CELL BIOLOGY - UNIVERSITY OF IOWA
    Inventors: Qiao Lin, Yibo Zhu, Junyi Shang, Zhixing Zhang, Xuejun Wang, Jaeyoung Yang, Cheng Wang, Pavana G. Rotti, John F. Engelhardt, Zhuang Hao
  • Publication number: 20180368743
    Abstract: A microdevice for monitoring a target analyte is provided. The microdevice can include a field effect transistor comprising a substrate, a gate electrode, and a microfluidic channel including graphene. The microfluidic channel can be formed between drain electrodes and source electrodes on the substrate. The microdevice can also include at least one aptamer functionalized on a surface of the graphene. The at least one aptamer can be adapted for binding to the target analyte. Binding of the target analyte to the at least one aptamer can alter the conductance of the graphene.
    Type: Application
    Filed: June 19, 2018
    Publication date: December 27, 2018
    Applicants: THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW NEW YORK, Department of Anatomy and Cell Biology - Universit y of Iowa
    Inventors: Qiao Lin, Yibo Zhu, Junyi Shang, Zhixing Zhang, Xuejun Wang, Jaeyoung Yang, Cheng Wang, Pavana G. Rotti, John F. Engelhardt, Zhuang Hao
  • Patent number: 8748208
    Abstract: For the present invention, a P-type thermo-electric thin-film layer and a N-type thermo-electric thin-film layer are respectively deposited on two sides of an insulating substrate. During the deposition, the P-type thermo-electric thin-film layer and the N-type thermo-electric thin-film layer are deposited and connected on the same exposed side of the insulating substrate, and then a PN junction is formed. This method makes the fabrication simplified without special process for connecting the P-type thermo-electric thin-film layer and the N-type thermo-electric thin-film layer. Due to the features of thin-film thermo-electric material, the performance of thermo-electric generator is improved. During the deposition, the P-type thermo-electric thin-film layer and the N-type thermo-electric thin-film layer are deposited and connected on the exposed side of the insulating substrate, so welding is not required in this heating surface side.
    Type: Grant
    Filed: December 9, 2009
    Date of Patent: June 10, 2014
    Assignee: Shenzhen University
    Inventors: Ping Fan, Dong-Ping Zhang, Zhuang-Hao Zheng, Guang-Xing Liang
  • Publication number: 20120064656
    Abstract: For the present invention, a P-type thermo-electric thin-film layer and a N-type thermo-electric thin-film layer are respectively deposited on two sides of an insulating substrate. During the deposition, the P-type thermo-electric thin-film layer and the N-type thermo-electric thin-film layer are deposited and connected on the same exposed side of the insulating substrate, and then a PN junction is formed. This method makes the fabrication simplified without special process for connecting the P-type thermo-electric thin-film layer and the N-type thermo-electric thin-film layer. Due to the features of thin-film thermo-electric material, the performance of thermo-electric generator is improved. During the deposition, the P-type thermo-electric thin-film layer and the N-type thermo-electric thin-film layer are deposited and connected on the exposed side of the insulating substrate, so welding is not required in this heating surface side.
    Type: Application
    Filed: December 9, 2009
    Publication date: March 15, 2012
    Applicant: Shenzhen University
    Inventors: Ping Fan, Dong-Ping Zhang, Zhuang-Hao Zheng, Guang-Xing Liang