Abstract: An alginate hydrogel-based thin-film heat flux sensor for billet crystallizer includes an alginate hydrogel substrate. The alginate hydrogel substrate is configured in a U-shaped planar structure. The U-shaped planar structure includes a first side and a second side, and the first side is longer than the second side. An inner surface of the alginate hydrogel substrate is provided with a first film thermocouple and a second film thermocouple. The first film thermocouple is in crosslinking connection with the second film thermocouple.

Abstract: The present disclosure relates to the field of strain sensors, and specifically relates to a high-temperature thin-film strain sensor, including a substrate and a strain-sensitive grid. The strain-sensitive grid includes an indium tin oxide layer and a platinum layer, the indium tin oxide layer is deposited on the substrate, and the platinum layer is deposited on the indium tin oxide layer. The indium tin oxide layer contains 50% by mass of indium oxide and 50% by mass of tin oxide. The high-temperature thin-film strain sensor provided by the present disclosure can be used in an environment from room temperature to 500° C., and have extremely high sensitivity at a high temperature of 500° C. Unlike the conventional metal foil strain gauge with a thickness of several microns, the high-temperature thin-film strain grid has a thickness of 500 nm, which can better convey the strain of the measured object at high temperature.

Abstract: Disclosed are electrochemical-mechanical thinning method and apparatus for large-diameter semiconductor wafers. The large-diameter semiconductor wafers are thinned by combining anodizing modification and mechanical grinding. The apparatus includes a grinding tool system, a wafer holding device and a grinding wheel dressing device. The grinding tool system includes a base plate and a cup-shaped grinding wheel. The base plate is taken as a cathode, and the semiconductor wafer is taken as an anode. During thinning, both the cathode and the anode are immersed in an electrolyte. Under the action of an external electric field, the semiconductor wafer is subjected to surface modification and softening. At the same time, an oxide layer and intermediate state products generated by modification are removed together by using the grinding wheel, and the semiconductor wafer is thinned under the combined action of multi-energy fields of electricity, chemistry, machinery and force.

Abstract: An alginate hydrogel-based thin-film heat flux sensor for billet crystallizer includes an alginate hydrogel substrate. The alginate hydrogel substrate is configured in a U-shaped planar structure. The U-shaped planar structure includes a first side and a second side, and the first side is longer than the second side. An inner surface of the alginate hydrogel substrate is provided with a first film thermocouple and a second film thermocouple. The first film thermocouple is in crosslinking connection with the second film thermocouple.

Abstract: A silicon carbide-based micro-electro-mechanical system (MEMS) combined temperature-pressure sensor chip and a preparation thereof. The chip includes a peripheric pressure-measuring unit and a center temperature-measuring unit. The pressure-measuring unit includes a silicon carbide substrate with a raised island and a pressure sensitive diaphragm formed by etching the back of the substrate. The raised island and the pressure-sensitive diaphragm constitute a membrane-island structure. Four piezoresistive strips are arranged symmetrically along a circumferential direction of a root of the pressure-sensitive diaphragm and between the raised island and the pressure-sensitive diaphragm. The temperature-measuring unit includes the raised island and a thin-film thermocouple arranged thereon.

Abstract: A silicon carbide-based micro-electro-mechanical system (MEMS) combined temperature-pressure sensor chip and a preparation thereof. The chip includes a peripheric pressure-measuring unit and a center temperature-measuring unit. The pressure-measuring unit includes a silicon carbide substrate with a raised island and a pressure sensitive diaphragm formed by etching the back of the substrate. The raised island and the pressure-sensitive diaphragm constitute a membrane-island structure. Four piezoresistive strips are arranged symmetrically along a circumferential direction of a root of the pressure-sensitive diaphragm and between the raised island and the pressure-sensitive diaphragm. The temperature-measuring unit includes the raised island and a thin-film thermocouple arranged thereon.

Abstract: A thin-film thermocouple probe includes a columnar substrate, a tungsten-26% rhenium film and an indium oxide (In2O3) film. A side surface of the columnar substrate is provided with a first straight groove and a second straight groove. The tungsten-26% rhenium film is arranged on a front end surface of the columnar substrate and in the first straight groove. The indium oxide film is arranged on the front end surface of the columnar substrate and in the second straight groove. The indium oxide film on the front end surface of the columnar substrate is connected to the tungsten-26% rhenium film on the front end surface of the columnar substrate. A first metal lead wire is connected to the tungsten-26% rhenium film, and a second metal lead wire is connected to the indium oxide film. A method of preparing the thin-film thermocouple probe is provided.

Abstract: A thin-film thermocouple probe includes a columnar substrate, a tungsten-26% rhenium film and an indium oxide (In2O3) film. A side surface of the columnar substrate is provided with a first straight groove and a second straight groove. The tungsten-26% rhenium film is arranged on a front end surface of the columnar substrate and in the first straight groove. The indium oxide film is arranged on the front end surface of the columnar substrate and in the second straight groove. The indium oxide film on the front end surface of the columnar substrate is connected to the tungsten-26% rhenium film on the front end surface of the columnar substrate. A first metal lead wire is connected to the tungsten-26% rhenium film, and a second metal lead wire is connected to the indium oxide film. A method of preparing the thin-film thermocouple probe is provided.

Abstract: A frequency detection method based on synchronous oscillation of resonators, and a tilt sensor using the frequency detection method are disclosed. The sensor includes a detecting unit and a synchronization unit which are respectively disposed in a first oscillating circuit and a second oscillating circuit for forming two self-excited oscillators. The detecting unit and the synchronization unit are electrostatically coupled through a plate capacitor to allow a weak synchronous current to pass through, which affects and reduces phase noise of the self-excited oscillator formed by the detecting unit, thereby greatly improving the frequency stability thereof and simultaneously reading out a natural frequency thereof through a frequency counter. Three detecting units are respectively evenly distributed at a periphery of a hexagonal mass block through magnifying beams. The mass block is configured to sense a gravitational acceleration.

Abstract: A doped lanthanum chromate thin-film thermocouple includes two thermodes (1, 2) arranged on a ceramic substrate (3), wherein: the two thermodes (1, 2) are overlapped with each other; both of the thermodes (1, 2) are made of doped lanthanum chromate thin film; at least one doping element selected from a group consisting of Mg, Ca, Sr, Ba, Co, Cu, Sm, Fe, Ni and V is doped in each lanthanum chromate thin film; and the lanthanum chromate thin films adopted by the two thermodes (1, 2) are doped with in different doping elements or with a same doping element of different contents. A method for preparing the doped lanthanum chromate thin-film thermocouple is also provided.

Abstract: The present invention provides a method of on-line rapid fluid density measurement using a piezoresistive micro-cantilever, the present invention can achieve on-line measurement without changing the existing device; more importantly, without acquiring the resonant frequency of the cantilever in fluid to be detected, thus remarkably reducing measurement time, and guaranteeing the real on-line rapid measurement. By using the method of the present invention, measurement of the density of fluid to be detected by a calibrated piezoresistive micro-cantilever may be achieved within seconds or even shorter.

Abstract: The present invention provides a method of on-line rapid fluid density measurement using a piezoresistive micro-cantilever, the present invention can achieve on-line measurement without changing the existing device; more importantly, without acquiring the resonant frequency of the cantilever in fluid to be detected, thus remarkably reducing measurement time, and guaranteeing the real on-line rapid measurement. By using the method of the present invention, measurement of the density of fluid to be detected by a calibrated piezoresistive micro-cantilever may be achieved within seconds or even shorter.