Abstract: Examples of the present disclosure provide a memory, a storage system, and an operation method of a memory. The memory includes: a plurality of memory planes and a peripheral circuit coupled to the memory planes. The peripheral circuit includes: a plurality of charge pumps, a charge pump having a clock signal end, an input end, and an output end, wherein the output end of each of the charge pumps is coupled to one of the plurality of memory planes; the charge pump is configured to boost an input voltage of the input end according to a clock signal received by the clock signal end and then output the same to the output end; wherein clock signals received by clock signal ends of the plurality of charge pumps are different.

Abstract: A Cu interconnect and a method of forming a Cu interconnect of damascene process is provided. A barrier layer is formed at a sidewall and a bottom of a through hole and a groove, constructing a Cu interconnecting line. The barrier layer comprises a metal crystal adhesion layer or a graphene layer. The metal crystal adhesion layer may be a Co, Ru or Os crystal layer. The metal crystal adhesion layer may enhance adhesion of Cu, inhibit diffusion of Cu toward a dielectric layer efficiently, and promoting electro-migration of Cu. The graphene layer may be an Carbon allotrope/graphene complex layer. The graphene layer may provide lower resistance for the Cu interconnect and increase adhesion between barrier and dielectric layer to improve EM. Both the metal crystal adhesion layer and the graphene layer may efficiently reduce the total thickness of the barrier layer and the first barrier layer to efficiently decrease resistance of the through hole.

Abstract: The present invention relates to an ALD (Atomic layer deposition) apparatus and an ALD method. The ALD apparatus is provided with a reacting chamber and an annealing chamber, in which the reacting chamber is positioned with several heaters, a substrate to be deposited with an epitaxial layer may be transferred between different heaters, and each heater may independently moderate temperature. Different heaters correspond to different ALDs, and the number of the heaters may be varied to meet required a film to be deposited or composition of a crystal material. Because the heaters may be optimized to adapt to required temperature of different reactant gases, thickness of the epitaxial layer will meet expectation, and quality of the epitaxial layer will be promoted. Meanwhile, moderating the temperature independently may raise yield of production.

Abstract: The present invention relates to an ALD (Atomic layer deposition) apparatus and an ALD method. The ALD apparatus is provided with a reacting chamber and an annealing chamber, in which the reacting chamber is positioned with several heaters, a substrate to be deposited with an epitaxial layer may be transferred between different heaters, and each heater may independently moderate temperature. Different heaters correspond to different ALDs, and the number of the heaters may be varied to meet required a film to be deposited or composition of a crystal material. Because the heaters may be optimized to adapt to required temperature of different reactant gases, thickness of the epitaxial layer will meet expectation, and quality of the epitaxial layer will be promoted. Meanwhile, moderating the temperature independently may raise yield of production.

Abstract: A Cu interconnect and a method of forming a Cu interconnect of damascene process is provided. A barrier layer is formed at a sidewall and a bottom of a through hole and a groove, constructing a Cu interconnecting line. The barrier layer comprises a metal crystal adhesion layer or a graphene layer. The metal crystal adhesion layer may be a Co, Ru or Os crystal layer. The metal crystal adhesion layer may enhance adhesion of Cu, inhibit diffusion of Cu toward a dielectric layer efficiently, and promoting electro-migration of Cu. The graphene layer may be an Carbon allotrope/graphene complex layer. The graphene layer may provide lower resistance for the Cu interconnect and increase adhesion between barrier and dielectric layer to improve EM. Both the metal crystal adhesion layer and the graphene layer may efficiently reduce the total thickness of the barrier layer and the first barrier layer to efficiently decrease resistance of the through hole.

Abstract: Embodiments of the present invention provide a press tool and an electronic product detecting apparatus including the press tool. The press tool includes: a connector soft-contact member including: a first base plate; a floating plate mounted to the first base plate; and a buffer member mounted between the first base plate and the floating plate and configured such that when receiving a pressing force, the buffer member generates a repulsive force, so that the floating plate is floatable; and a press member connected with the connector soft-contact member such that they are openable and closable relative to each other. The press member includes a second base plate and a connector bearing piece which is mounted to the second base plate and which is positioned just opposite to the floating plate when the connector soft-contact member and the press member are closed.

Abstract: Embodiments of the present invention provide a press tool and an electronic product detecting apparatus including the press tool. The press tool includes: a connector soft-contact member including: a first base plate; a floating plate mounted to the first base plate; and a buffer member mounted between the first base plate and the floating plate and configured such that when receiving a pressing force, the buffer member generates a repulsive force, so that the floating plate is floatable; and a press member connected with the connector soft-contact member such that they are openable and closable relative to each other. The press member includes a second base plate and a connector bearing piece which is mounted to the second base plate and which is positioned just opposite to the floating plate when the connector soft-contact member and the press member are closed.