Abstract: Various embodiments provide methods and systems for making and/or cleaning semiconductor devices. In one embodiment, a semiconductor device can be formed including a metal layer and a photoresist polymer. During formation, the semiconductor device can be cleaned in a cleaning chamber by a first cleaning solution provided from a solution supply device. After this cleaning process, a second cleaning solution containing metal ions and/or polymer residues can be produced and processed in a solution processing device to at least partially remove the metal ions and/or polymer residues to produce a third cleaning solution for re-use. In an exemplary fabrication or cleaning system, the solution processing device may be configured connecting to either an inlet or an outlet of the cleaning chamber. After cleaning, the semiconductor device can be processed to include a metal plug or an interconnect wiring.

Abstract: Various embodiments provide methods and systems for making and/or cleaning semiconductor devices. In one embodiment, a semiconductor device can be formed including a metal layer and a photoresist polymer. During formation, the semiconductor device can be cleaned in a cleaning chamber by a first cleaning solution provided from a solution supply device. After this cleaning process, a second cleaning solution containing metal ions and/or polymer residues can be produced and processed in a solution processing device to at least partially remove the metal ions and/or polymer residues to produce a third cleaning solution for re-use. In an exemplary fabrication or cleaning system, the solution processing device may be configured connecting to either an inlet or an outlet of the cleaning chamber. After cleaning, the semiconductor device can be processed to include a metal plug or an interconnect wiring.

Abstract: Various embodiments provide methods and systems for making and/or cleaning semiconductor devices. In one embodiment, a semiconductor device can be formed including a metal layer and a photoresist polymer. During formation, the semiconductor device can be cleaned in a cleaning chamber by a first cleaning solution provided from a solution supply device. After this cleaning process, a second cleaning solution containing metal ions and/or polymer residues can be produced and processed in a solution processing device to at least partially remove the metal ions and/or polymer residues to produce a third cleaning solution for re-use. In an exemplary fabrication or cleaning system, the solution processing device may be configured connecting to either an inlet or an outlet of the cleaning chamber. After cleaning, the semiconductor device can be processed to include a metal plug or an interconnect wiring.