Abstract: A sample processing apparatus (100) and a use method therefor. The sample processing apparatus (100) comprises a uniform mixing mechanism (130) and a magnetic attraction mechanism (140). The sample processing apparatus (100) further comprises at least one of a sample tube (110) and a reaction tube (120). The uniform mixing mechanism (130) is configured to perform uniform mixing processing on a biological sample in the sample tube (110) and/or a biological sample in the reaction tube (120). The magnetic attraction mechanism (140) comprises a magnet (141). The magnet (141) can move relative to the sample tube (110) and/or the reaction tube (120), so as to perform magnetic attraction processing on the biological sample in the sample tube (110) and/or the biological sample in the reaction tube (120).

Abstract: An automatic extraction device and a use method therefor. The automatic extraction device comprises a sample processing apparatus (100), a portal frame (200), a consumable assembly (300), and a pipetting apparatus (400). The sample processing apparatus (100) comprises a uniform mixing mechanism (130) and a magnetic attraction mechanism (140), which are respectively used for performing uniform mixing processing and magnetic attraction processing on a biological sample. The portal frame (200) comprises a base (201) and a moving beam (202) capable of moving relative to the base (201). The sample processing apparatus (100) and the consumable assembly (300) are provided on the base (201). The pipetting apparatus (400) is provided on the moving beam (202) for implementing a pipetting operation between the consumable assembly (300) and the sample processing apparatus (100).

Abstract: The patent application relates to a PN junction as well as the preparation method and use thereof. Said PN junction comprises a p-type CIGS semiconductor thin film layer and an n-type CIGS semiconductor thin film layer, wherein the n-type CIGS semiconductor thin film layer comprises or consists essentially of elements Cu, In, Ga and Se, where the Cu to In molar ratio is within the range of 1.1 to 1.5, and has a chemical formula of Cu(InxGa1-x)Se2, where x is within the range of 0.6 to 0.9. The patent application further relates to a semiconductor thin film element comprising said PN junction, in particular a photodiode element, and a photoelectric sensing module comprising said semiconductor thin film element as well as the various uses thereof.

Abstract: A blending tube (10), comprising: a tube body (20), the tube body (20) being used for accommodating a sample; and a first stirring member (30) and a second stirring member (40), which are arranged on an inner wall (200) of the tube body (20), wherein a width-to-thickness ratio of the first stirring member (30) is greater than a width-to-thickness ratio of the second stirring member (40).

Abstract: Devices, systems, and methods are provided for goal-based audience selection. A method for generating an audience using machine learning may include receiving a request to generate an audience for an advertisement campaign, the request including an objective associated with presentation of the advertisement campaign. The method may include determining first user actions based on the objective, and identifying first users of a system who performed the first user actions using the system. The method may include determining second user actions performed by the first users prior to performing the first user actions, and identifying second users of the system who performed the second user actions and failed to perform the first user actions. The method may include generating a target audience to which to present the advertisement campaign, and causing presentation of the advertisement campaign to the target audience.

Abstract: This disclosure describes systems, devices, and techniques related to generating audiences for media campaigns based on previous consumer behavior. In some examples, a query is received from at least one provider device. The query may indicate at least one characteristic of interactions between consumer accounts and items offered by an online marketplace. Audience identifiers can be retrieved from at least one database corresponding to the query. In some cases, the audience identifiers indicate a set of consumer accounts that have previously interacted with one or more items according to the characteristic(s) specified by the query. An indication of the audience identifiers can be output to the provider.

Abstract: The patent application relates to a PN junction as well as the preparation method and use thereof. Said PN junction comprises a p-type CIGS semiconductor thin film layer and an n-type CIGS semiconductor thin film layer, wherein the n-type CIGS semiconductor thin film layer comprises or consists essentially of elements Cu, In, Ga and Se, where the Cu to In molar ratio is within the range of 1.1 to 1.5, and has a chemical formula of Cu(InxGa1-x)Se2, where x is within the range of 0.6 to 0.9. The patent application further relates to a semiconductor thin film element comprising said PN junction, in particular a photodiode element, and a photoelectric sensing module comprising said semiconductor thin film element as well as the various uses thereof.

Abstract: A microscopy sample stage includes a microscope carrier platform, a heating conductor mounting on the microscope carrier platform, and a pressure cover covering the sample groove for providing high pressure for the sample groove. The heating conductor includes a sample groove. The microscopy sample stage further includes a temperature sensor for detecting temperature of the sample groove, a heating resistance for heating the sample groove and a pipeline for transmitting refrigeration medium, the temperature sensor and the heating resistance are mounted on a bottom surface of the sample groove, and the pipeline is arranged inside the heat conductor surrounding the sample groove.

Abstract: A method for fabricating a Cu—In—Ga—Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu—In—Ga—Se absorbing layer on the back electrode by fractional sputtering in a plurality of sputter chambers; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu—In—Ga—Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer on the In2Se3 or ZnS buffer layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.

Abstract: A method for fabricating a Cu—In—Ga—Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu—In—Ga—Se absorbing layer on the molybdenum back electrode; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu—In—Ga—Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.

Abstract: A method for fabricating a Cu—In—Ga—Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu—In—Ga—Se absorbing layer on the molybdenum back electrode; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu—In—Ga—Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.

Abstract: A method for fabricating a Cu—In—Ga—Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu—In—Ga—Se absorbing layer on the back electrode by fractional sputtering in a plurality of sputter chambers; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu—In—Ga—Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer on the In2Se3 or ZnS buffer layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.