Abstract: A preparation method of a low-cost passivated contact full-back electrode solar cell includes: performing alkali polishing on a Si wafer; performing RCA cleaning and HF cleaning; growing a tunnel SiOx film layer, an in-situ doped amorphous Si film layer, and a texturing mask layer on the back of the Si wafer; performing annealing activation on the amorphous Si film layer to form a polycrystalline Si film layer; etching the texturing mask layer; performing double-sided texturing on the Si wafer; performing HF cleaning to remove the texturing mask layer; depositing an AlOx film on the front and back of the Si wafer; depositing a SiNx passivation film on the front and back of the Si wafer; ablating a part of the AlOx film and a part of the SiNx passivation film on the back of the Si wafer; and performing screen-printing and sintering on the back of the Si wafer.