Patents by Inventor Zhuqing Huang

Zhuqing Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming channel hole in three-dimensional memory device using nonconformal sacrificial layer
    Patent number: 10790297
    Abstract: Embodiments of methods for forming channel holes in 3D memory devices using a nonconformal sacrificial layer are disclosed. In an example, a dielectric stack including interleaved first dielectric layers and second dielectric layers is formed on a substrate. An opening extending vertically through the dielectric stack is formed. A nonconformal sacrificial layer is formed along a sidewall of the opening, such that a variation of a diameter of the opening decreases. The nonconformal sacrificial layer and part of the dielectric stack abutting the nonconformal sacrificial layer are removed. A channel structure is formed in the opening after removing the nonconformal sacrificial layer and part of the dielectric stack.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: September 29, 2020
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Baoyou Chen, Weihua Cheng, Hai Hui Huang, Zhuqing Huang, Guanping Wu, Hongbin Zhu, Yu Qi Wang
  • METHOD FOR FORMING CHANNEL HOLE IN THREE-DIMENSIONAL MEMORY DEVICE USING NONCONFORMAL SACRIFICIAL LAYER
    Publication number: 20200119042
    Abstract: Embodiments of methods for forming channel holes in 3D memory devices using a nonconformal sacrificial layer are disclosed. In an example, a dielectric stack including interleaved first dielectric layers and second dielectric layers is formed on a substrate. An opening extending vertically through the dielectric stack is formed. A nonconformal sacrificial layer is formed along a sidewall of the opening, such that a variation of a diameter of the opening decreases. The nonconformal sacrificial layer and part of the dielectric stack abutting the nonconformal sacrificial layer are removed. A channel structure is formed in the opening after removing the nonconformal sacrificial layer and part of the dielectric stack.
    Type: Application
    Filed: November 20, 2018
    Publication date: April 16, 2020
    Inventors: Baoyou Chen, Weihua Cheng, Hai Hui Huang, Zhuqing Huang, Guanping Wu, Hongbin Zhu, Yu Qi Wang