Patents by Inventor Zi Cheng PAN

Zi Cheng PAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FinFET device and fabrication method thereof
    Patent number: 10453962
    Abstract: A FinFET device and fabrication method thereof is provided. The method includes: providing a semiconductor substrate and fins. Each fin includes a first sidewall region and a second sidewall region. An interlayer dielectric layer is formed on the semiconductor substrate and on the fins, with openings. Then a target work function layer is formed on sidewalls and on a bottom of each opening. The target work function layer includes a first target region covering the first sidewall region, a second target region covering the second sidewall region, and a third portion on the top surface of each fin. The second target region and the third portion of the target work function layer is doped with modification ions; and has a second effective work function value greater than a first effective work function value of the first target region of the target work function layer.
    Type: Grant
    Filed: May 4, 2018
    Date of Patent: October 22, 2019
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Nan Wang, Zi Cheng Pan, Zhong Shan Hong
  • FINFET DEVICE AND FABRICATION METHOD THEREOF
    Publication number: 20180323300
    Abstract: A FinFET device and fabrication method thereof is provided. The method includes: providing a semiconductor substrate and fins. Each fin includes a first sidewall region and a second sidewall region. An interlayer dielectric layer is formed on the semiconductor substrate and on the fins, with openings. Then a target work function layer is formed on sidewalls and on a bottom of each opening. The target work function layer includes a first target region covering the first sidewall region, a second target region covering the second sidewall region, and a third portion on the top surface of each fin. The second target region and the third portion of the target work function layer is doped with modification ions; and has a second effective work function value greater than a first effective work function value of the first target region of the target work function layer.
    Type: Application
    Filed: May 4, 2018
    Publication date: November 8, 2018
    Inventors: Nan WANG, Zi Cheng PAN, Zhong Shan HONG