Patents by Inventor Zi-Jheng Liu
Zi-Jheng Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240071814Abstract: A method of fabricating a semiconductor package includes providing a substrate having at least one contact and forming a redistribution layer on the substrate. The formation of the redistribution layer includes forming a dielectric material layer over the substrate and performing a double exposure process to the dielectric material layer. A development process is then performed and a dual damascene opening is formed in the dielectric material layer. A seed metallic layer is formed over the dual damascene opening and over the dielectric material layer. A metal layer is formed over the seed metallic layer. A redistribution pattern is formed in the first dual damascene opening and is electrically connected with the at least one contact.Type: ApplicationFiled: November 7, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Zi-Jheng Liu, Chen-Cheng Kuo, Hung-Jui Kuo
-
Publication number: 20240071887Abstract: A semiconductor package includes a first die, a second die and a redistribution layer structure. The first die and the second die are disposed laterally. The redistribution layer structure is disposed over and electrically connected to the first die and the second die, wherein the redistribution layer structure includes a plurality of vias and a plurality of lines stacked alternately and electrically connected to each other and embedded by a plurality of polymer layers, and wherein from a top view, first vias of the plurality of vias overlapping with the first die or the second die have an elliptical-like shape.Type: ApplicationFiled: August 23, 2022Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Zi-Jheng Liu, Ting-Yang Yu, Ming-Tan Lee, Hung-Jui Kuo
-
Publication number: 20240038688Abstract: A device includes a molding compound, a plurality of through vias, a seal ring structure, and a protection layer. The plurality of through vias are embedded in the molding compound. The seal ring structure is over the molding compound and surrounds the through vias in a top view. The protection layer covers the seal ring and extends toward the molding compound in a cross-sectional view.Type: ApplicationFiled: October 11, 2023Publication date: February 1, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Zi-Jheng LIU, Jo-Lin LAN, Yu-Hsiang HU, Hung-Jui KUO
-
Patent number: 11862512Abstract: A method of fabricating a semiconductor package includes providing a substrate having at least one contact and forming a redistribution layer on the substrate. The formation of the redistribution layer includes forming a dielectric material layer over the substrate and performing a double exposure process to the dielectric material layer. A development process is then performed and a dual damascene opening is formed in the dielectric material layer. A seed metallic layer is formed over the dual damascene opening and over the dielectric material layer. A metal layer is formed over the seed metallic layer. A redistribution pattern is formed in the first dual damascene opening and is electrically connected with the at least one contact.Type: GrantFiled: February 26, 2021Date of Patent: January 2, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Zi-Jheng Liu, Chen-Cheng Kuo, Hung-Jui Kuo
-
Publication number: 20230377951Abstract: A method of fabricating a semiconductor package includes providing a substrate having at least one contact and forming a redistribution layer on the substrate. The formation of the redistribution layer includes forming a dielectric material layer over the substrate and performing a double exposure process to the dielectric material layer. A development process is then performed and a dual damascene opening is formed in the dielectric material layer. A seed metallic layer is formed over the dual damascene opening and over the dielectric material layer. A metal layer is formed over the seed metallic layer. A redistribution pattern is formed in the first dual damascene opening and is electrically connected with the at least one contact.Type: ApplicationFiled: August 1, 2023Publication date: November 23, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Zi-Jheng Liu, Chen-Cheng Kuo, Hung-Jui Kuo
-
Patent number: 11817399Abstract: A device includes a semiconductor chip, a molding compound, an insulating structure, an under-bump-metallurgy (UBM), a conductive ball, and a protection layer. The molding compound laterally surrounds the semiconductor chip. The insulating structure is over the semiconductor chip and the molding compound. The UBM is over the insulating structure and is electrically connected to the semiconductor chip. The conductive ball is in contact with the UBM. The protection layer extends from the UBM to the molding compound.Type: GrantFiled: June 6, 2021Date of Patent: November 14, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Zi-Jheng Liu, Jo-Lin Lan, Yu-Hsiang Hu, Hung-Jui Kuo
-
Publication number: 20230307251Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.Type: ApplicationFiled: May 26, 2023Publication date: September 28, 2023Inventors: Zi-Jheng Liu, Yu-Hsiang Hu, Jo-Lin Lan, Sih-Hao Liao, Chen-Cheng Kuo, Hung-Jui Kuo, Chung-Shi Liu, Chen-Hua Yu, Meng-Wei Chou
-
Patent number: 11756929Abstract: A semiconductor package includes a first chip, a first chip and a molding compound. The first chip has a first via protruding from the first chip. The second chip has a second via protruding from the second chip, wherein a thickness of the first chip is different from a thickness of the second chip. The molding compound encapsulates the first chip, the second chip, the first via and the second via, wherein surfaces of the first via, the second via and the molding compound are substantially coplanar.Type: GrantFiled: June 1, 2021Date of Patent: September 12, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Zi-Jheng Liu, Chen-Cheng Kuo, Hung-Jui Kuo
-
Patent number: 11699598Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.Type: GrantFiled: December 14, 2020Date of Patent: July 11, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Zi-Jheng Liu, Yu-Hsiang Hu, Jo-Lin Lan, Sih-Hao Liao, Chen-Cheng Kuo, Hung-Jui Kuo, Chung-Shi Liu, Chen-Hua Yu, Meng-Wei Chou
-
Publication number: 20220269184Abstract: The current disclosure describes techniques for managing vertical alignment or overlay in semiconductor manufacturing using machine learning. Alignments of interconnection features in a fan-out WLP process are evaluated and managed through the disclosed techniques. Big data and machine learning are used to train a classification that correlates the overlay error source factors with overlay metrology categories. The overlay error source factors include tool signals. The trained classification includes a base classification and a Meta classification.Type: ApplicationFiled: February 25, 2021Publication date: August 25, 2022Inventors: Tzu-Cheng LIN, Chien Rhone WANG, Kewei ZUO, Ming-Tan LEE, Zi-Jheng LIU
-
Patent number: 11322479Abstract: A semiconductor package includes a first chip, a plurality of through vias and an encapsulant. The first chip has a first via and a protection layer thereon. The first via is disposed in the protection layer. The through vias are disposed aside the first chip. The encapsulant encapsulates the first chip and the plurality of through vias. A surface of the encapsulant is substantially coplanar with surfaces of the protection layer and the plurality of through vias.Type: GrantFiled: June 22, 2020Date of Patent: May 3, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Zi-Jheng Liu, Chen-Cheng Kuo, Hung-Jui Kuo
-
Patent number: 11177165Abstract: A method of manufacturing a semiconductor device includes the step of positioning a patterned mask over a dielectric layer. The dielectric layer comprises a low-temperature cure polyimide. The method further includes the steps of exposing a first surface of the dielectric layer through the patterned mask to an I-line wavelength within an I-line stepper, and developing the dielectric layer to form an opening.Type: GrantFiled: October 1, 2018Date of Patent: November 16, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Zi-Jheng Liu, Yu-Hsiang Hu, Hung-Jui Kuo
-
Publication number: 20210296262Abstract: A device includes a semiconductor chip, a molding compound, an insulating structure, an under-bump-metallurgy (UBM), a conductive ball, and a protection layer. The molding compound laterally surrounds the semiconductor chip. The insulating structure is over the semiconductor chip and the molding compound. The UBM is over the insulating structure and is electrically connected to the semiconductor chip. The conductive ball is in contact with the UBM. The protection layer extends from the UBM to the molding compound.Type: ApplicationFiled: June 6, 2021Publication date: September 23, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Zi-Jheng LIU, Jo-Lin LAN, Yu-Hsiang HU, Hung-Jui KUO
-
Patent number: 11127688Abstract: A semiconductor package includes a semiconductor die and a redistribution structure. The redistribution structure is electrically connected to the semiconductor die. The redistribution structure includes dielectric layers, conductive traces and seal patterns. The conductive traces are embedded in the dielectric layers. At least one conductive trace of the conductive traces includes a via pattern and a routing pattern. The seal patterns are disposed on the conductive traces. One seal pattern of the seal patterns is disposed between a top surface of the routing pattern and a first dielectric layer of the dielectric layers.Type: GrantFiled: August 22, 2019Date of Patent: September 21, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Zi-Jheng Liu, Hung-Jui Kuo, Ming-Tan Lee
-
Publication number: 20210288026Abstract: A semiconductor package includes a first chip, a first chip and a molding compound. The first chip has a first via protruding from the first chip. The second chip has a second via protruding from the second chip, wherein a thickness of the first chip is different from a thickness of the second chip. The molding compound encapsulates the first chip, the second chip, the first via and the second via, wherein surfaces of the first via, the second via and the molding compound are substantially coplanar.Type: ApplicationFiled: June 1, 2021Publication date: September 16, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Zi-Jheng Liu, Chen-Cheng Kuo, Hung-Jui Kuo
-
Publication number: 20210183694Abstract: A method of fabricating a semiconductor package includes providing a substrate having at least one contact and forming a redistribution layer on the substrate. The formation of the redistribution layer includes forming a dielectric material layer over the substrate and performing a double exposure process to the dielectric material layer. A development process is then performed and a dual damascene opening is formed in the dielectric material layer. A seed metallic layer is formed over the dual damascene opening and over the dielectric material layer. A metal layer is formed over the seed metallic layer. A redistribution pattern is formed in the first dual damascene opening and is electrically connected with the at least one contact.Type: ApplicationFiled: February 26, 2021Publication date: June 17, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Zi-Jheng Liu, Chen-Cheng Kuo, Hung-Jui Kuo
-
Patent number: 11037877Abstract: A package structure includes a first die, a second die, a bridge, an encapsulant and a redistribution layer (RDL) structure. The bridge is arranged side by side with the first die and the second die. The encapsulant laterally encapsulates the first die, the second die and the bridge. The RDL structure is disposed on the first die, the second die, the bridge and the encapsulant. The first die and the second die are electrically connected to each other through the bridge and the RDL structure.Type: GrantFiled: March 14, 2019Date of Patent: June 15, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Zi-Jheng Liu, Hung-Jui Kuo, Ming-Tan Lee
-
Patent number: 11031351Abstract: A method includes forming an insulating film over a semiconductor structure, forming a sealing ring over a sidewall of the insulating film, and forming a protective layer over an exposed sidewall of the sealing ring. The semiconductor structure includes a semiconductor chip and a molding compound disposed around the semiconductor chip. The exposed sidewall of the sealing ring faces away from the sidewall of the insulating film.Type: GrantFiled: February 11, 2019Date of Patent: June 8, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Zi-Jheng Liu, Jo-Lin Lan, Yu-Hsiang Hu, Hung-Jui Kuo
-
Publication number: 20210134611Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.Type: ApplicationFiled: December 14, 2020Publication date: May 6, 2021Inventors: Zi-Jheng Liu, Yu-Hsiang Hu, Jo-Lin Lan, Sih-Hao Liao, Chen-Cheng Kuo, Hung-Jui Kuo, Chung-Shi Liu, Chen-Hua Yu, Meng-Wei Chou
-
Patent number: 10937688Abstract: A method of fabricating a semiconductor package includes providing a substrate having at least one contact and forming a redistribution layer on the substrate. The formation of the redistribution layer includes forming a dielectric material layer over the substrate and performing a double exposure process to the dielectric material layer. A development process is then performed and a dual damascene opening is formed in the dielectric material layer. A seed metallic layer is formed over the dual damascene opening and over the dielectric material layer. A metal layer is formed over the seed metallic layer. A redistribution pattern is formed in the first dual damascene opening and is electrically connected with the at least one contact.Type: GrantFiled: April 29, 2019Date of Patent: March 2, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Zi-Jheng Liu, Chen-Cheng Kuo, Hung-Jui Kuo