Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.

Abstract: A method for forming a semiconductor device is provided. The method includes forming a photoresist layer comprising an organometallic compound over a substrate. The organometallic compound includes a metal core, at least one hydrolyzable ligand bonded to the metal core, and at least one photoacid generator ligand bonded to the metal core. The method further includes selectively exposing the photoresist layer to radiation and developing the photoresist layer to form a pattern in the photoresist layer.

Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.

Abstract: A computing system automatically manages error reports. Each error report specifies an error that occurred within a subsystem of the computing system. A received error report is added into a root cause grouping. Each root cause grouping contains error reports having error types traceable to a same root cause. A deployment time at which the subsystem corresponding to the error report was deployed within the computing system is determined. A severity score for the root cause grouping is generated as a function of the deployment time. The severity score inversely correlates to a time period length between the deployment time and the occurrence time of the error. The root cause grouping is assigned to a ranked error container of a plurality of ranked error containers based on the generated severity score. Each ranked error container contains root cause groupings having severity scores within a specified score range.

Abstract: A method of forming semiconductor device includes depositing a coating layer over a substrate, forming a photoresist layer over the coating layer, exposing the photoresist layer to actinic radiation, and developing the photoresist layer to form a patterned photoresist layer. The coating layer includes a polymer containing a first unit having a pendant hydrogen donor group capable of producing a hydrogen radical upon exposure to the actinic radiation or heat, and a second unit having a pendant water donor group capable of producing water upon exposure to the actinic radiation or heat.

Abstract: A method for forming a semiconductor device is provided. The method includes applying a photoresist composition over a substrate, thereby forming a photoresist layer over the substrate; performing a first baking process to the photoresist layer; exposing the photoresist layer to an extreme ultraviolet (EUV) radiation, thereby forming a pattern therein; performing a second baking process to the photoresist layer; and developing the photoresist layer having the pattern therein using a developer, thereby forming a patterned photoresist layer. The first baking process and the second baking process are conducted under an ambient atmosphere having a humidity level ranging from 55% to 100%.

Abstract: A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

Abstract: A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-containing photoresist layer is selectively exposed to actinic radiation. A second protective layer is formed over the edge portion of the first main surface of the semiconductor substrate. The selectively exposed photoresist layer is developed to form a patterned photoresist layer, and the second protective layer is removed.

Abstract: A semiconductor device includes a semiconductor die having a die surface, in which the die surface includes a bond pad. A ball bond has a distal surface and flattened-disk shape extending from the distal surface and terminating in a proximal surface spaced apart from the distal surface. The distal surface is coupled to the bond pad and a channel extends a depth into the proximal surface surrounding a central portion of the proximal surface. A bond wire extending from the central portion of the proximal surface, in which the channel is spaced apart from and surrounds the bond wire.

Abstract: A photoresist developer includes a solvent having Hansen solubility parameters of 15<?d<25, 10<?p<25, and 6<?p<30; an acid having an acid dissociation constant, pKa, of ?15<pKa<4, or a base having a pKa of 40>pKa>9.5; and a chelate.

Abstract: A method for forming a semiconductor structure includes forming a gate structure on a substrate; depositing a first dielectric layer over the gate structure; depositing a second dielectric layer over the first dielectric layer and having a different density than the first dielectric layer; performing a first etching process on the first and second dielectric layers to form a trench; performing a second etching process on the first and second dielectric layers to modify the trench; filling a conductive material in the modified trench.

Abstract: An example semiconductor package comprises a semiconductor die having a top surface, a bond pad formed on the top surface, a bond wire having a first end and a second end, wherein the first end is attached to the bond pad. The semiconductor package having a contact pad, wherein the second end of the wire bond is attached to the contact pad by a stitch bond, the stitch bond having a plateau region formed between a cut end and a ramped portion, wherein a bottom surface of the plateau region forms an attachment to the contact pad.

Abstract: A system for quantitative differential phase contrast microscopy with isotropic transfer function utilizes a modulation mechanism to create a detection light field having a radial or other axial orientation of optical intensity gradient or other distribution. A condenser generates an off-axis light field to project onto an object under examination, thereby generating an object light field, which is then guided to an image capturing device through an objective lens for capturing images. A differential phase contrast algorithm is applied to the images for obtaining a phase, thereby a depth information corresponding to the phase can be obtained to reconstruct the surface profile of the object.

Abstract: A system for quantitative differential phase contrast microscopy with isotropic transfer function utilizes a modulation mechanism to create a detection light field having a radial or other axial orientation of optical intensity gradient or other distribution. A condenser generates an off-axis light field to project onto an object under examination, thereby generating an object light field, which is then guided to an image capturing device through an objective lens for capturing images. A differential phase contrast algorithm is applied to the images for obtaining a phase, thereby a depth information corresponding to the phase can be obtained to reconstruct the surface profile of the object.

Abstract: A peptide-imprinted conductive polymer and use thereof is provided, especially a peptide-imprinted conductive polymer including conductive polymer monomer(s), two-dimensional (2D) material(s), and a small peptide fragment of ?-synuclein as template. The peptide-imprinted conductive polymer has high sensibility, detects ?-synuclein at low concentrations, thus allowing early diagnosis and treatment of Parkinson's disease.

Abstract: The invention discloses a substrate storage apparatus having a detecting device detachably connecting to an outer pod. The detecting device includes a sensing member having a sensing terminal, a cavity and a sensor. The sensing terminal detachably connects to the outer pod such that the sensing terminal exposes in an accommodating space inside of the outer pod. The cavity receiving the sensor extends to an outside of the outer pod and the accommodating space. The cavity communicates with the accommodating space through the sensing terminal, allowing the sensor to read information regarding the accommodating space.

Abstract: The present invention discloses an ?-synuclein sensing film, a manufacturing method and a use thereof. The ?-synuclein sensing film comprises a base plate and plural ?-synuclein sensing polymers polymerized on the base plate. Each of the plural ?-synuclein sensing polymers has plural ?-synuclein detection holes on a surface thereof. The plural ?-synuclein sensing polymers are manufactured by electropolymerization, and the plural ?-synuclein detection holes are imprinted by an ?-synuclein peptide. A sample to be tested can be applied to the ?-synuclein sensing film for detecting the ?-synuclein therein.

Abstract: A system for quantitative differential phase contrast microscopy with isotropic transfer function utilizes a modulation mechanism to create a detection light field having a radial or other axial orientation of optical intensity gradient or other distribution. A condenser generates an off-axis light field to project onto an object under examination, thereby generating an object light field, which is then guided to an image capturing device through an objective lens for capturing images. A differential phase contrast algorithm is applied to the images for obtaining a phase, thereby a depth information corresponding to the phase can be obtained to reconstruct the surface profile of the object.

Abstract: In an approach to generating program analysis rules, one or more computer processors identify one or more unassociated code standard documents. The one or more computer processors feed the one or more unassociated code standard documents into a cognitive model, wherein the cognitive model utilizes one or more historical code standard documents based on the unassociated code standard documents and associated program analysis rules based on the unassociated code standard documents, wherein the historical code standard documents are natural language documents and the program analysis rules are programmatic. The one or more computer processors generate, based on one or more calculations by the cognitive model, one or more program analysis rules. The one or more computer processors correct one or more programmatic errors or one or more stylistic errors based on the generated one or more program analysis rules.