Abstract: A semiconductor package includes a leadframe including a die pad and a plurality of leads including a first lead, wherein the first lead includes a first ball bond. A semiconductor die having a plurality of bond pads including a first bond pad is on the die pad including a second ball bond on the first bond pad and a stitch bond on the second ball bond. A first wirebond connection is between the first ball bond and the stitch bond.

Abstract: A method for forming a ball bond for an integrated circuit formed on a semiconductor die includes forming a ball at a first send of a conductive wire inserted in a capillary tool and lowering the capillary tool toward a pad on the semiconductor die positioned on a support surface. The method further includes moving, using a motor, the support surface relative to the capillary tool to thereby bond the ball, without using ultrasound, to the pad and then raising the capillary tool.

Abstract: A method for forming a ball bond for an integrated circuit formed on a semiconductor die includes forming a ball at a first send of a conductive wire inserted in a capillary tool and lowering the capillary tool toward a pad on the semiconductor die positioned on a support surface. The method further includes moving, using a motor, the support surface relative to the capillary tool to thereby bond the ball, without using ultrasound, to the pad and then raising the capillary tool.

Abstract: A method of interconnecting components of a semiconductor device using wire bonding is presented. The method includes creating a free air ball at a first end of an aluminum wire that has a coating surrounding the aluminum wire, wherein the coating comprises palladium, and wherein the free air ball is substantially free of the coating. The method further includes the step of bonding the free air ball to a bond pad on a semiconductor chip, the bond pad having an aluminum surface layer, wherein the resultant ball bond and the bond pad form a substantially homogenous, aluminum-to-aluminum bond. The method may further include bonding a second, opposing end of the coated-aluminum wire to a bond site separate from the semiconductor chip, the bond site having a palladium surface layer, wherein the second end of the coated-aluminum wire and the bond site form a substantially homogenous, palladium-to-palladium bond.

Abstract: A method of interconnecting components of a semiconductor device using wire bonding is presented. The method includes creating a free air ball at a first end of an aluminum wire that has a coating surrounding the aluminum wire, wherein the coating comprises palladium, and wherein the free air ball is substantially free of the coating. The method further includes the step of bonding the free air ball to a bond pad on a semiconductor chip, the bond pad having an aluminum surface layer, wherein the resultant ball bond and the bond pad form a substantially homogenous, aluminum-to-aluminum bond. The method may further include bonding a second, opposing end of the coated-aluminum wire to a bond site separate from the semiconductor chip, the bond site having a palladium surface layer, wherein the second end of the coated-aluminum wire and the bond site form a substantially homogenous, palladium-to-palladium bond.