Patents by Inventor Zi-Weng Dong

Zi-Weng Dong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6721149
    Abstract: A method and system for providing a magnetoresistive sensor that reads data from a recording media is disclosed. The method and system include providing an antiferromagnetic layer, providing a pinned layer without adversely affecting performance of the magnetoresistance sensor, providing a free layer, and providing an insulating spacer layer disposed between the pinned layer and the free layer. The pinned layer is magnetically coupled to the antiferromagnetic layer. The pinned layer is also a half metallic ferromagnet. The free layer is ferromagnetic. The insulating spacer layer is sufficiently thin to allow tunneling of charge carriers between the pinned layer and the free layer. Furthermore, the insulating spacer layer allows for d-bonding between a portion of the insulating layer and a portion of the free layer and pinned layer layer.
    Type: Grant
    Filed: February 11, 2000
    Date of Patent: April 13, 2004
    Assignee: Western Digital (Fremont), Inc.
    Inventors: Zhupei Shi, Qun Wen Leng, Zi-Weng Dong
  • Patent number: 6445554
    Abstract: A method and system for providing a magnetoresistive sensor for reading data from a recording media is disclosed. The method and system include providing a first barrier layer and a second barrier layer and providing a free layer disposed between the first barrier layer and the second barrier layer. The free layer is ferromagnetic. The method and system also include providing a first pinned layer and a second pinned layer. The first pinned layer and the second pinned layer are ferromagnetic. The first barrier layer is disposed between the first pinned layer and one edge of the free layer. The second barrier layer is disposed between the second pinned layer and another edge of the free layer. The method and system also include providing a first antiferromagnetic layer and a second antiferromagnetic layer. The first pinned layer is magnetically coupled to the first antiferromagnetic layer. The second pinned layer is magnetically coupled to the second antiferromagnetic layer.
    Type: Grant
    Filed: March 10, 2000
    Date of Patent: September 3, 2002
    Assignee: Read-Rite Corporation
    Inventors: Zi-Weng Dong, Zhupei Shi